Design Kit

Class D Audio Amplifier Using IRS2092

1 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

Contents
Slide #

1. Specification........................................................................................................................................... 3
• Efficiency........................................................................................................................................... 4-5
• THD................................................................................................................................................... 6-7
• Frequency Response........................................................................................................................ 8-9
• Note: Po[W] vs. Vin[VPEAK] ............................................................................................................... 10
2. Waveforms Evaluations.......................................................................................................................... 11
3. Simulated vs. Measured Waveforms...................................................................................................... 12-14
4. Voltage Gain – GV…............................................................................................................................... 15-16
5. Self Oscillation Frequency...................................................................................................................... 17-18
6. Dead time............................................................................................................................................... 19-21
7. Turn on transient.................................................................................................................................... 22-25
8. Components stress................................................................................................................................. 26-27
9. Power loss in the MOSFETs................................................................................................................... 28
• Standard Model................................................................................................................................. 29-30
• Professional Model............................................................................................................................ 31-33
• Standard vs. Professional Model....................................................................................................... 34-35
10. Short circuit vs. switching output shutdown............................................................................................ 36-38
11. Short Circuit Response........................................................................................................................... 39-41
12. Capacitor Models........................................................................................... ........................................ 42-44
13. Simulated Performance of the circuit with different FETs......... .............................................................. 45-47
14. Simulation Index .................................................................................................................................... 48

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1. Specifications

General Test Conditions Simulation folder

Supply Voltage + 15V

Load Impedance 8-4 Ω

Self-Oscillating
400kHz
Frequency
Gain Setting 24dB
Electrical Data
Output Power 25W (1kHz, 4Ω)
Efficiency 93% (25W, 4Ω) [Efficiency]

Audio Performance
Distortion Less than 0.015%THD (1kHz, 4Ω, 10W) [THD]

Frequency
(20 ~ 20000 Hz,
Response : + 1dB [FrqRsp]
4Ω, 2V Output)
20Hz~20kHz

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 Specifications : Efficiency Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
VB R12
C4 GND VB R11 10k C9 R13
C1 R2 20nH
IN C2 + 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 3k
R1 IC = 7 EKMG500ELL100ME11D1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19 LOAD
C8 C7 CSD VCC R15 20nH 10 2.2k
RPER11H103K2K1A01B 10 {RL}
10u 10u VSS LO 0 Ls3 C12
VOFF = 0 0 IC = 7 IC = 10 VSS LO R20 C10 22u MMC250K474
VREF 10
VAMPL = {1.4142*SQRT(Po*RL)/Gv } 3.3k IC = 15 C13
FREQ = {f in} VREF COM 1 MMC400K104
R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: 0 0 0
R7 FET2
PARAMETERS: IRS2092
1.2k R21 IRFIZ24N
Po = 25W 8.2k 2 C17
RPER11H104K2K1A01B
Gv = 15.85
RL = 4 20nH

+
Ls4 0 0
f in = 1kHz R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

Condition : Analysis .Options

Po = 25[W], 4Ω Load Time Domain (Transient) RELTOL: 0.01
Run to time: 3ms VNTOL: 1.0u
Start saving data after: 1ms ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
ITL2: 200
ITL4: 10

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 Specifications : Efficiency Simulation Result

%Efficiency

PSUPPLY [W]

PO [W]

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 Specifications : THD Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
75 U5 D2 IRFIZ24N
R4 VR1 VAA CSH MUR120RLG MUR120RLG 2
220 VAA CSH D1
VB R12
C4 GND VB R11 10k C9 R13
C1 10u R2 20nH
IN C2 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 3k
R1 IC = 7 1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
1n CSD VCC R18 R19 LOAD
C3 C8 C7 CSD VCC R15 20nH 10 2.2k
10 {RL}
10u 10u 10u VSS LO 0 Ls3 C12
0 IC = 14 IC = 7 IC = 10 VSS LO R20 C10 22u MMC250K474
VREF 10
VOFF = 0 3.3k IC = 15 C13
VAMPL = {1.4142*SQRT(Po*RL)/Gv } VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
PARAMETERS: 8.2k 2 C17
Po = 10 RPER11H104K2K1A01B
Gv = 15.85 20nH

+
RL = 4 Ls4 0 0
R5
f in = 1k
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

Analysis .Options
Condition : Time Domain (Transient) RELTOL: 0.01
fin = 1kHz, Po = 10[W], Run to time: 3ms VNTOL: 1.0u
4Ω Load Start saving data after: 0s ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Output File Options... ITL2: 200
 Perform Fourier Analysis ITL4: 10
Center Frequency: 1khz
Output Variables: V(OUT)

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 Specifications : THD Simulation Result

HARMONIC FREQUENCY FOURIER NORMALIZED PHASE NORMALIZED

NO (HZ) COMPONENT COMPONENT (DEG) PHASE

VOUT 0.0144%THD
1 1.00E+03 8.81E+00 1.00E+00 1.79E+02 0.00E+00

2 2.00E+03 4.62E-04 5.25E-05 4.18E+01 -3.15E+02

3 3.00E+03 2.78E-04 3.16E-05 8.49E+01 -4.51E+02

4 4.00E+03 3.23E-04 3.67E-05 6.91E+01 -6.45E+02

5 5.00E+03 3.73E-04 4.23E-05 8.66E+01 -8.06E+02

6 6.00E+03 6.69E-04 7.60E-05 6.10E+01 -1.01E+03

7 7.00E+03 2.85E-04 3.24E-05 8.09E+01 -1.17E+03

8 8.00E+03 4.32E-04 4.91E-05 7.17E+01 -1.36E+03

9 9.00E+03 5.95E-04 6.76E-05 2.70E+01 -1.58E+03

TOTAL HARMONIC DISTORTION = 1.438206E-02 PERCENT

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 Specifications : Frequency Response Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 U5 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 8.499 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19 LOAD
C7 CSD VCC R15 20nH 10 2.2k
RPER11H103K2K1A01B 10 {RL}
10u VSS LO 0 Ls3 C12
0 C8 IC = 9.8 VSS LO R20 C10 22u MMC250K474
VREF 10
VOFF = 0 10u 3.3k IC = 15.11 C13
VAMPL = { 1.4142*VOUT/Gv } IC = 7 VREF COM 1 MMC400K104
FREQ = {f in} R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
PARAMETERS: 8.2k 2 RPER11H104K2K1A01B
C17
f in = 20k
RL = 8 20nH

+
Gv = 15.85 Ls4 0 0
R5
VOUT = 2
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

Analysis .Options
Condition : Time Domain (Transient) RELTOL: 0.01
20 ~ 20000 Hz, 4Ω Run to time: 2ms VNTOL: 1.0u
Load, 2V Output Start saving data after: 0ms ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Parametric Sweep ITL2: 200
 Global parameter ITL4: 10
Parameter name: RL
 Value list: 4, 8

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 Specifications : Frequency Response Simulation Result

VOUT+1dB (8Ω Load @ 20kHz)

VOUT - 0.4dB (4Ω Load @ 20kHz)

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 Note : PO [W] vs. VIN [VPEAK]

1.4142 × √𝑃𝑃𝑃𝑃 × 𝑅𝑅𝑅𝑅𝑅𝑅𝑅𝑅𝑅𝑅

𝑉𝑉𝑉𝑉𝑉𝑉 [𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉𝑉] =
𝐺𝐺𝐺𝐺

 Po [W] = power output

 Rload [Ω] = Load resistance
 GV = Amplifier voltage gain

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 2. Waveforms Evaluation
Class D amplifier circuit are simulated and compared with measured waveforms from oscilloscope
(Tektronix: TDS3054B)

R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
V COMP VS V 1
100k C6 R16
V1 C3 AMZ0050J102 CSD VCC R18 R19V
V CSD VCC V
RPER11H103K2K1A01B C7 R15 20nH 10 2.2k -
VSS LO 10
10u 0 Ls3 C12 SPEAKER
VOFF = 0 0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VAMPL = { 1.4142*VOUT/Gv } 10u 3.3k
V
IC = 15 C13
FREQ = {f in} IC = 7 VREF COM 1 MMC400K104
R6 8.2k OCSET DT
OCSET DT
PARAMETERS: R7 FET2 0 0 0
IRS2092
VOUT = 2 1.2k R21 IRFIZ24N
Gv = 15.85 8.2k 2 C17
f in = 1k RPER11H104K2K1A01B

20nH

+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

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 3. Simulated vs. Measured Waveform (1/3)
Simulated Measured

OUT

VS

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 3. Simulated vs. Measured Waveform (2/3)
Simulated Measured

HO

LO

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 3. Simulated vs. Measured Waveform (3/3)

Simulated Measured

COMP

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 4. Voltage gain of the amplifier – GV
R3 +B
VS 15V
47k +B
R8
2 0

𝑅𝑅𝐹𝐹𝐹𝐹
C16

+
820
C15 EKMG500ELL222MLP1S

𝐺𝐺𝑉𝑉 =
R17 RPER11H104K2K1A01B

RFB =47kΩ
20nH 1
Ls1 0 0

𝑅𝑅𝐼𝐼𝐼𝐼 RIN =2.4 ,3kΩ R9

4.7k
1
C11
C14
MMH250K684

RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
R2 20nH
IN C2 + 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 {RIN}
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0.14142 IC = 7 VREF COM 1 MMC400K104
FREQ = {Freq} R6 8.2k OCSET DT
OCSET DT
PARAMETERS: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
Freq = 1k 8.2k 2 RPER11H104K2K1A01B
RIN = 3k C17

20nH

+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

0
Analysis .Options
Time Domain (Transient) RELTOL: 0.01
Run to time: 1ms VNTOL: 1.0u
Start saving data after: 100n ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Sweep variable ITL2: 200
 Global parameter: RIN ITL4: 10
 Value list: 2.4k, 3k

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 4. Voltage gain of the amplifier – GV

GV = 26dB

GV = 24dB

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 5. Self-Oscillating Frequency
Self oscillating frequency is design by setting the following items
• Integration capacitors.
Integration resistor.
R3 +B
VS 15V
• 47k
R8 +B
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH
Integration resistor: Integration capacitors: Ls1
1
0 0
C14
R4+VR1 C4=C5 R9
4.7k
1
C11
MMH250K684

RPER11H104K2K1A01B
FET1
R4 VR1 IC1 D2 IRFIZ24N
220 75 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
8.2k 2 RPER11H104K2K1A01B
C17

20nH

+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820
Analysis .Options -15V

Time Domain (Transient) RELTOL: 0.001 0

Run to time: 1ms VNTOL: 1.0u

Start saving data after: 0.5m ABSTOL: 1.0n
Maximum step size: 40n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
ITL2: 200
ITL4: 10

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 5. Self-Oscillating Frequency

Simulated Measured

VS VS

OUT OUT

Self-oscillation frequency Self-oscillation frequency

= 400kHz (Simulated) = 400kHz (Measured)

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 6. Dead-time
Dead-time Mode R20 R21 Analysis .Options
Time Domain (Transient) RELTOL: 0.001
DT1 (25ns) 3.3k 8.2k Run to time: 1ms VNTOL: 1.0u
DT2 (40ns) 5.6k 4.7k Start saving data after: 0.5m ABSTOL: 1.0n
Maximum step size: 40n CHGTOL: 0.01p
DT3 (65ns) 8.2k 3.3k  Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
DT4 (105ns) - < 10k ITL1: 500
ITL2: 200
R3 +B
ITL4: 10
VS 15V
47k +B
R8
2 0 C16
EKMG500ELL222MLP1S

+
820
C15
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 D1 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 R21 FET2 0 0 0
IRS2092
1.2k 8.2k IRFIZ24N
2 C17
RPER11H104K2K1A01B

20nH

+
R5
V(DT) Voltage Divider Ls4 0 0

2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

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 Dead-time DT1(25ns)

Spike voltage

DT1(25ns)

DT1(25ns)

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 Dead-time DT3(65ns)

Spike voltages
(Decrease for longer dead time)

DT3(65ns)

DT3(65ns)

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 7. Turn-on transient
 Start-up sequencing is achieved through the charging of the CSD voltage (C7). Simulation will
show how capacitors are charged to complete the sequence for each capacitance value.
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C7: 10u, 5u, 1
C14
R9 MMH250K684
and 3.3u F 4.7k C11
RPER11H104K2K1A01B
R10 FET1
R4 75 IC1 0.01m D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 22u 3k C5 IC = 0 R14 7G14N-220-RB
R1 C3 IC = 0 1nF COMP VS 4.7 2 OUT +
100k RPER11H103K2K1A01B C6 COMP VS R16 1
AMZ0050J102 CSD VCC R18 R19
C8 C7 CSD VCC R15 20nH 10 2.2k -
VSS LO 8.2k 10
22u 10u 0 Ls3 C12 SPEAKER
0 IC = 0 IC = 0 VSS LO R21 C10 MMC250K474 F120A
VREF 10
VOFF = 0 22u C13
VAMPL = 0 VREF COM IC = 0 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 3.3k FET2 0 0 0
IRS2092 R20
1.2k IRFIZ24N
2 C17
RPER11H104K2K1A01B

20nH

+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
.Options
0
RELTOL: 0.01
VNTOL: 1.0u
Analysis ABSTOL: 1n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 975ms GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 100u ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10

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 Turn-on transient: C7 = 10uF

V(VCC,COM)

V(VB,VS)

V(HO)

V(LO)

V(VAA)

Vth2___

V(CSD) Vth1___

V(VSS)

Class D Startup
@ 0.976second.

23 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Turn-on transient: C7 = 5uF

V(VCC,COM)

V(VB,VS)

V(HO)

V(LO)

V(VAA)
Vth2

Vth1
V(CSD)

V(VSS)

Class D Startup
@ 0.488second.

24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Turn-on transient: C7 = 3.3uF

V(VCC,COM)

V(VB,VS)

V(HO)

V(LO)

V(VAA)

Vth2

Vth1
V(CSD)

V(VSS)

Class D Startup
@ 0.320second.

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 8. Components stress
 This simulation shows how voltage and current are applied to each components at the maximum
load condition (25W,4ohm).
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.5 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19 LOAD
C7 CSD VCC R15 20nH 10 2.2k
RPER11H103K2K1A01B 10 {RL}
10u VSS LO 0 Ls3 C12
0 C8 IC = 9.81 VSS LO R20 C10 22u MMC250K474
VREF 10
VOFF = 0 10u 3.3k IC = 15.5 C13
VAMPL = {1.4142*SQRT(Po*RL)/Gv } IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 FET2 0 0 0
PARAMETERS: IRS2092
1.2k R21 IRFIZ24N
Po = 25 8.2k 2 C17
RPER11H104K2K1A01B
Gv = 15.85
RL = 4 20nH

+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

26 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Components Stress Simulated Result for
Diodes, FETs, Inductor, and 4ΩLoad

D1

D2

FET1

FET2

L1

4ΩLoad

27 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 9. Power losses in the MOSFETs
The total power loss in MOSFET are given by:
PTOTAL = PSW+Pcond+Pgd R3
VS
+B
15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
8.2k 2 C17
RPER11H104K2K1A01B

20nH

+
Ls4 0 0
R5
C18
2 1 -B EKMG500ELL222MLP1S
1 Ls5
20nH -B
820 -15V .Options
0 RELTOL: 0.003
VNTOL: 1.0m
Analysis ABSTOL: 100n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 500us GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 2n ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 20

28 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Power losses FET1(Standard Model)
FET1: ID and VDS are simulated and compared with scope (Tektronix: TDS3054B) waveforms
PSW ,Pcond ,and Pgd are calculated by PSpice.

Power loss (VDS*ID)

Pgd PSW Pcond

ID

ID

-VDS

-VDS
VDS, ID (Simulated) VDS, ID (Measured)

29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Power losses FET2(Standard Model)
FET2: ID and VDS are simulated and compared with scope (Tektronix: TDS3054B) waveforms
PSW ,Pcond ,and Pgd are calculated by PSpice.

Power loss (VDS*ID)

Pgd Pcond PSW

VDS

ID

VDS

ID

VDS, ID (Simulated) VDS, ID (Measured)

30 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Power losses in the MOSFETs (Professional model)
The total power loss in MOSFET are given by:
PTOTAL = PSW+Pcond+Pgd
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
FET1 RPER11H104K2K1A01B
MIRFIZ24N_P D3
R4 75 IC1 D2 DIRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 0 0 0
IRS2092 D4
1.2k R21 FET2 DIRFIZ24N
8.2k MIRFIZ24N_P 2 C17
RPER11H104K2K1A01B

20nH

+
Ls4 0 0
R5
C18
2 1 -B EKMG500ELL222MLP1S
1 Ls5
20nH -B
820 -15V .Options
0 RELTOL: 0.001
VNTOL: 1.0m
Analysis ABSTOL: 100n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 500us GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 2n ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10

31
 Power losses FET1(Professional Model)
FET1: ID and VDS are simulated and compared with scope (Tektronix: TDS3054B) waveforms
PSW ,Pcond ,and Pgd are calculated by PSpice.

Power loss (VDS*ID)

Pgd PSW Pcond

ID

ID

-VDS

-VDS
VDS, ID (Simulated) VDS, ID (Measured)

32 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Power losses FET2(Professional Model)
FET2: ID and VDS are simulated and compared with scope (Tektronix: TDS3054B) waveforms
PSW ,Pcond ,and Pgd are calculated by PSpice.

Power loss (VDS*ID)

Pgd Pcond PSW

VDS

ID

VDS

ID

VDS, ID (Simulated) VDS, ID (Measured)

33 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 FET: IRFIZ24N Qg Standard vs. Professional Model
 Gate charge characteristics in Professional model has more accurate results than standard model.

IRFIZ24N IRFIZ24N
(Standard) (Professional)

VDD=44V,ID=10A
Measurement Simulation Error (%)
,VGS=10V
Standard Model: Qg(nc) 13.400 12.543 -6.396
Professional Model: Qg(nc) 13.400 13.409 0.067

34 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 FET: IRFIZ24N Pgd Standard vs. Professional Model
 Simulated Pgd ,Standard model compared to Professional model ,shows some different result
caused by different Qg characteristics of the models.

IRFIZ24N IRFIZ24N
(Standard) (Professional)

 Professional model requires more simulation time and might cause some convergence error.

35 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 10. Short circuit vs. switching output shutdown
 This simulation will show how the IRS2092 responds to a short circuit condition.
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
1
R9
4.7k C11
MMH250K684
Short circuit
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1 S1
C3 AMZ0050J102 CSD VCC R18 R19 + +
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10 - -
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 14 VSS LO R20 C10 22u MMC250K474 S F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13 VOFF = 0.0V
VAMPL = {1.4142*SQRT(Po*RL)/Gv } IC = 7 VREF COM 1 MMC400K104 VON = 1.0V
FREQ = 1k R6 8.2k OCSET DT
OCSET DT V1 = 0
V2
R7 FET2 0 0 0 V2 = 5
PARAMETERS: IRS2092
1.2k R21 IRFIZ24N TD = {tshrt}
Po = 12.5 8.2k 2 C17 TR = 10n
RPER11H104K2K1A01B TF = 10n
Gv = 15.85 PW = 1
RL = 8 20nH PER = 100

+
Ls4 0 0
tshrt = 2.25m R5 0
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

0
.Options
Short circuit at 2.25ms. RELTOL: 0.01
VNTOL: 1.0u
Analysis ABSTOL: 1n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 4ms GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 100n ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10

36 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

Short Circuit vs. Switching Output Shutdown (Positive Side)

V(Speaker)

CSD pin

VS pin
Load (Speaker) current

Delay between short circuit and

switching output shutdown

37 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

Short Circuit vs. Switching Output Shutdown (Negative Side)

V(Speaker)

CSD pin

VS pin
Load (Speaker) current

Delay between short circuit and

switching output shutdown

38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 11. Short Circuit Response
 This simulation will show how the IRS2092 responds to a short circuit condition.
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
C7: 10u 20nH 1
Ls1 0 0
and 3.3u F 1
C14
R9 MMH250K684
4.7k C11
RPER11H104K2K1A01B

R4 75 IC1 D2
FET1
IRFIZ24N Short circuit
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
R2 20nH
IN C2 + 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 3k
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1 S1
C3 AMZ0050J102 CSD VCC R18 R19 + +
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10 - -
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 14 VSS LO R20 C10 22u MMC250K474 S F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13 VOFF = 0.0V
VAMPL = {1.4142*SQRT(Po*RL)/Gv } IC = 7 VREF COM 1 MMC400K104 VON = 1.0V
FREQ = 1k R6 8.2k OCSET DT V2 V1 = 0
OCSET DT V2 = 5
R7 FET2 0 0 0 TD = {tshrt}
PARAMETERS: IRS2092
1.2k R21 IRFIZ24N TR = 10n
Po = 12.5 8.2k 2 C17 TF = 10n
RPER11H104K2K1A01B PW = 4
Gv = 15.85 PER = 400
RL = 8 20nH

+
Ls4 0 0 0
tshrt = 1.75m R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V

0
.Options
Short circuit at 1.75ms. RELTOL: 0.01
VNTOL: 1.0u
Analysis ABSTOL: 1n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 1.25s GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 100u ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10

39 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Short Circuit Response: C7 = 10uF

CSD pin

Load (Speaker) current

VS pin

40 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Short Circuit Response: C7 = 3.3uF

CSD pin

Load (Speaker) current

VS pin

41 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 12. Capacitor models
 Capacitor models are needed for the simulation to include spike voltage.
R3 +B
VS 15V
47k +B
R8
2 0
820
C15 C16
R17 0.1u 2200u
20nH 1
Ls1 0 0
C14
R9 1
0.68u
4.7k C11
0.1u
FET1
R4 VR1 IC1 D2 IRFIZ24N
220 75 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
10u C4 GND VB R11 10k C9 R13
C2 R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 0.001u CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
10n 10
10u VSS LO 0 Ls3 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u C12 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 0.47u C13
VAMPL = 0 IC = 7 VREF COM 1 0.1u
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
8.2k 2

20nH
Ls4 C170 0
R5
0.1u C18
2 1 -B 2200u
1 Ls5
20nH -B
820 -15V .Options
0 RELTOL: 0.001
VNTOL: 1.0u
Analysis ABSTOL: 1.0n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 1ms GMIN: 1.0E-12
Start saving data after: 0.5m ITL1: 500
Maximum step size: 40n ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10

42 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Simulation Result (without Capacitor Model)

Simulated (without output capacitor models) Measured

VS VS

OUT OUT

Self-oscillation frequency Self-oscillation frequency

= 400kHz (Simulated) = 400kHz (Measured)

43 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Simulation Result (with Capacitor Model)

Simulated (with output capacitor models) Measured

VS VS

OUT OUT

Self-oscillation frequency Self-oscillation frequency

= 400kHz (Simulated) = 400kHz (Measured)

44 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

13. Simulated Performance of the circuit with different FETs

IRFIZ24N Key Parameters IRFI4024H-117P Key Parameters

VDS 55 V VDS 55 V
ID 14 A ID 11 A
RDS(ON) typ. @ 10V 70 mΩ RDS(ON) typ. @ 10V 48 mΩ
Qg typ. 13.4 nC Qg typ. 8.9 nC
tON typ. 38.9 ns tON typ. 7.9 ns
tOFF typ. 46 ns tOFF typ. 16.4 ns
Qrr typ. 120 nC Qrr typ. 11 nC

45
 Simulated Performance of the circuit with different FETs
R3 +B
VS 15V
47k +B
R8
2 0
C16

+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B

R4 75 IC1 D2 FET1
220 VR1 VAA CSH MUR120RLG MUR120RLG 2 IRFI4024H-117P
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 0 0 0
IRS2092
1.2k R21 FET2
8.2k 2 IRFI4024H-117P C17
RPER11H104K2K1A01B

20nH

+
Ls4 0 0
R5
C18
2 1 -B EKMG500ELL222MLP1S
1 Ls5
20nH -B
820 -15V

IRFIZ24N IRFI4024H-117P
Efficiency (@ 25W, 4Ω) 93.505% 94.578%
Distortion (@ 1kHz, 4Ω, 10W) 0.0144 %THD 0.0201 %THD

46 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

 Simulated Performance of the circuit with different FETs
IRFIZ24N IRFI4024H-117P

Power loss (VDS*ID) Power loss (VDS*ID)

Pgd PSW Pcond Pgd PSW Pcond

ID ID
FET1

-VDS -VDS

Power loss (VDS*ID) Power loss (VDS*ID)

Pgd Pcond PSW Pgd Pcond PSW

VDS VDS
FET2
ID ID

47
Simulations Index

Simulation Folder Name

1. Efficiency Evaluation............................................................ Efficiency
2. THD Evaluation.................................................................... THD
3. Frequency Response Evaluation.......................................... FrqRsp
4. Waveforms Evaluation.......................................................... Waveforms
5. Voltage gain of the amplifier – GV ........................................ Gv
6. Self-Oscillating Frequency.................................................... OSC
7. Dead-time Evaluation........................................................... DT
8. Turn-on transient.................................................................. StartUp
9. Component stresses............................................................. Stress
10. Power losses in the MOSFETs (Standard model) ................ FET(STD)
11. Power loss in the MOSFETs (Professional Model) .............. FET(PRO)
12. Short Circuit vs. Switching Output Shutdown....................... Short
13. Short Circuit Response......................................................... ShrtRsp

48 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009