BUZ900DP

MAGNA BUZ901DP
TEC
MECHANICAL DATA
Dimensions in mm N–CHANNEL
20.0 5.0
POWER MOSFET
3.3 Dia.

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES
1 2 3 • HIGH SPEED SWITCHING
2.0 1.0 • N–CHANNEL POWER MOSFET
2.0
3.4
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2 0.6
• ENHANCEMENT MODE
2.8
5.45 5.45 • INTEGRAL PROTECTION DIODE
TO–3PBL • P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
Case is Source • DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) BUZ900DP BUZ901DP
VDSX Drain – Source Voltage 160V 200V
VGSS Gate – Source Voltage ±14V
ID Continuous Drain Current 16A
ID(PK) Body Drain Diode 16A
PD Total Power Dissipation @ Tcase = 25°C 250W
Tstg Storage Temperature Range –55 to 150°C
Tj Maximum Operating Junction Temperature 150°C
RθJC Thermal Resistance Junction – Case 0.5°C/W

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
 BUZ900DP
MAGNA BUZ901DP
TEC
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic Test Conditions Min. Typ. Max. Unit
VGS = –10V BUZ900DP 160
BVDSX Drain – Source Breakdown Voltage V
ID = 10mA BUZ901DP 200
BVGSS Gate – Source Breakdown Voltage VDS = 0 IG = ±100µA ±14 V
VGS(OFF) Gate – Source Cut–Off Voltage VDS = 10V ID = 100mA 0.1 1.5 V
VDS(SAT)* Drain – Source Saturation Voltage VGD = 0 ID = 16A 12 V
VDS = 160V
10
BUZ900DP
IDSX Drain – Source Cut–Off Current VGS = –10V mA
VDS = 200V
10
BUZ901DP
yfs* Forward Transfer Admittance VDS = 10V ID = 3A 1.4 4 S

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 950
VDS = 10V
Coss Output Capacitance 550 pF
f = 1MHz
Crss Reverse Transfer Capacitance 18
ton Turn–on Time VDS = 20V 160
ns
toff Turn-off Time ID = 7A 80

* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.

Derating Chart
300

250
CH AN NE L D ISS IP ATION (W )

200

150

100

50

0
0 25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
 BUZ900DP
MAGNA BUZ901DP
TEC
Typical Output Characteristics Typical Output Characteristics
22 22

20 20
TC = 25˚C TC = 75˚C
7V
18 18

16 16
I D — D R AIN C U RR EN T (A)

I D — D R AIN C U RR EN T (A)
6V 7V

14 14 6V
5V
12 12
5V
PC

PC
10 H = 10 H =
25 25
0W 0W
4V 4V
8 8

6 6
3V 3V

4 2V
4
2V

2 2
1V 1V

0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
V DS — DRAIN – SOURCE VOLTAGE (V) V DS — DRAIN – SOURCE VOLTAGE (V)

Forward Bias Safe Operating Area Transconductance

100 100

V DS = 20V
TC = 25˚C
G FS — TRA NSC ON D UC TAN CE (S)
I D — D R AIN C U RR EN T (A)

10 10
DC
OP TC = 25˚C
ER
AT TC = 75˚C
IO
N

1 1
BUZ900D BUZ901D
160V

200V

0.1 0.1
1 10 100 1000 0 2 4 6 8 10 12 14 16
V DS — DRAIN – SOURCE VOLTAGE (V) I D — DRAIN CURRENT (A)

Drain – Source Voltage

vs
Gate – Source Voltage Typical Transfer Characteristics
16 22

TC = 25˚C 20 V DS = 10V
14
18
V DS — DR AIN – S OU RC E V OLTAGE (V )

TC = 25˚C
12
16
I D — D RA IN C UR R EN T (A)

TC = 75˚C
10 14
TC = 100˚C
12
8 I D = 14A
10
6 8
I D = 9A
6
4
I D = 5A
4
2
2
I D = 3A
0 0
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 10 11
V GS — GATE – SOURCE VOLTAGE (V) V GS — GATE – SOURCE VOLTAGE (V)

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95