3rd August, 2019

To the Editor,

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Subject: Submission of Original Research Article

Dear Sir,

I hereby write to submit the original research Article “Switching Transient Analysis and
Characterization of E-mode B-doped GaN Capped AlGaN DH-HEMT with Freewheeling
Schottky Barrier Diode (SBD)” for publication in International Journal of Numerical
Modelling: Electronic Networks, Devices and Fields. The article is authored by myself and
co-authored by MOHANBABU A, SARAVANA KUMAR R, P.MURUGAPANDIYAN,
MOHAMMED WASIM, PRAVEEN P, YOGESH KUMAR VERMA.

We look forward to hear from you.

Best Regards,

BASKARAN. S
S.K.P Engineering College, Tiruvannamalai, INDIA