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IIT Electrical Machines
IIT Electrical Machines
an evolution
Amitava DasGupta
Dept. of Electrical Engg.
IIT Madras
E-mail: adg@ee.iitm.ac.in
Organization
• How do we get high speed in circuits?
• MOSFETs
– How do we get higher speed?
– Limitations
• GaAs MESFETs
– Advantages and limitations
• HEMTs
– Why HEMTs?
– AlGaAs/GaAs vs pseudomorphic vs GaN
– Technology
– Modeling
2
How do we get high speed?
VDD
Circuit I Circuit
Block Block
V V C
GND
Delay
• To decrease delay
– Decrease C reduce device dimensions
– Decrease V reduce power supply voltage
– Increase I For a smaller V, we expect higher I
increase device conductance
3
MOSFETs – how do we get high speed?
• To reduce td
– Reduce L Use the smallest gate length possible
– Increase n Use a material with high carrier mobility
• Not completely true: n degrades at high lateral electric field
• Also need high vsat
– Increase Higher power dissipation
• Not completely true: n degrades at high
• W and tox has no effect on td !! 4
MOSFETs – for analog applications
• Normally ON device
• Uses a Schottky barrier gate to control current
– conducts when gate voltage is positive
• As VGS is made more negative, depletion layer
width in n-GaAs increases to switch off device
8
Schottky Metal-Semiconductor Junction
m > s
• Rectifying in nature
• p-n junction like I-V characteristics
• The depletion region in n-region
increases with increasing reverse
bias
9
Ohmic Metal-Semiconductor Junction
m < s n-type
Vacuum level Metal semiconductor
qm EC
I
qs
qs
EFm EFs
EFm q(s-m)
EC q(s-m)
EFs
V
EV
EV
Metal n-type
semiconductor
• No potential barrier
• Conducts almost equally for both forward and reverse bias
• Depending on the work-function of the metal, the metal-
semiconductor junction will be either ohmic or Schottky type
• A junction between metal and heavily doped semiconductor
is usually ohmic 10
MESFET characteristics
12
HEMT
p p
Gate
Gate
n+
VG n+
Source Source
EC EC
EF
EF EV qVG EV
14
MOSFET -> MESFET -> HEMT
Drain Drain
MESFET
n+ n+
n
SI-Substrate
SI-Substrate
Gate
Gate
VG
Depletion n+ n+
region
Source Source
EC
EC
EF qVG
EF
15
MOSFET -> MESFET -> HEMT
Drain
Drain
HEMT
n+
Un-doped
Gate
Un-doped
Gate
VG
Depletion
region Source
Source
EC EC
EF qVG
2DEG
EF
16
Similarities between HEMT and MOSFET
Metal Oxide Semiconductor
EC
Ei
EFp
qB
EV
-qVBS EFn
qVGB >0
qB
EFm
Al0.3Ga0.7As/GaAs
22
Advantages of GaN over GaAs
Si GaAs 4H-SiC GaN
Eg(eV) 1.1 1.42 3.26 3.4
Ebr (MV/cm) 0.3 0.4 3.0 3.3
µn (cm2/V s) 1350 8500 700 2000
Vsat (107 cm/s) 1.0 1.0 2.0 2.5
GaN
EBR fMAX
High Power
Operation GaAs
Si High Frequency
Operation
IMAX NFMIN
24
Adapted from Ph.D thesis of Behat Tridel , Technischen Universität Berlin, 2012.
GaN based devices! Why?
Adapted from Dr. Palacios , Associate Professor, Dept. of Electrical Engg. and Comp. Sci., MIT 25
.
GaN based HEMTs: status
• AlGaN/GaN based HEMTs replacing Si-based devices for power
amplifier and power switching applications
- wide signal bandwidth, multiband power amplifier, higher efficiency,
higher breakdown voltage, low Ron, reduced size and weight
Ga Psp
N
N
N
Psp GaN
Psp GaN
27
Polarization effect in AlGaN/GaN HEMT
S G D
AlGaN
2DEG
GaN (Channel)
29
AlGaN/GaN HEMT devices
High Polarization induced 2DEG – High Current Density
High Breakdown Electric Field – High Drain Bias
High Peak Electron Velocity – High Speed/Frequency Operation
Output Power Density Pout > 10W/mm (in C – Band)*
Current Gain Cutoff Frequency, ft > 100 GHz#
*Y. F. Wu, et al, IEEE Trans. on Electron Devices, vol. 28, pp.586-590, 2001.
#V. Kumar, et al, IEEE Electron Device Lett., vol 23., pp 455-457, 2002. 30
Inverse piezoelectric effect
Piezoelectric Charge
Strain
Separation
Inverse Electric
Piezoelectric Field
34
Al.83In.17N/GaN AlN/GaN HEMTs: Gate leakage issues
Schottky barrier gate in HEMTs
High gate leakage
increased off-power dissipation
limited positive gate voltage swing
low current drive
Earlier attempts
F-ion implantation, gate recessing, p-(Al)GaN cap layer
have several reliability and process related issues:
stability of VTh (over temperature, time, VG swing)
control of positive interface charge or donor states – more negative VTh
limited positive VTh
37
MIS-HEMTs using RIS-Al2O3
Reactive-Ion-Sputtered (RIS) Al2O3 has been reported to have
stable negative fixed oxide charge in it
may be useful for reducing interfacial positive charge
39
G. Dutta et al., IEEE Electron Device Letters, V 35 (11), p 1085, 2014
Transfer characteristics
• HEMT VTh = – 7 V
MIS-HEMT VTh = – 5.5 V
- positive shift in VTh
• same ID for same (VGS-VTh)
• low ID-VGS hysteresis – less trapping
• Ion/Ioff ratio improves by ~ 102 times
• increase in gm for MIS-HEMT
– due to increase in channel mobility
40
G. Dutta et al., IEEE Electron Device Letters, vol. 35 (11), p 1085, 2014
Reason for positive shift in VTh
1st level modelling of VTh:
Q p1
VTh _ HEMT b
C AlInN
Q f Q sp2 Q p1
VTh _ MIS HEMT b
C ox C AlInN
Qsp2 - Qf
VTh
C ox
AlIn
Metal Al2O3 GaN
N
Thicker oxide Thinner barrier
Non-recessed
MIS-HEMTs
Recessed gate
MIS-HEMTs
AlInN/GaN AlGaN/GaN
Non-Recessed
MIS-HEMTs
Recessed gate
MIS-HEMTs
AlInN/GaN AlGaN/GaN
• AlInN/GaN MIS-HEMTs showed greater positive shift in VTh
• Quasi normally-off AlInN/GaN MIS-HEMT with RIS-Al2O3
• Possibility of E- mode with optimized layer thicknesses 44
MIS-HEMT output characteristics
AlGaN/GaN
AlInN/GaN
Enhancement mode devices achieved for the first time using RIS-Al203
G. Dutta et al., IEEE Trans. Electron Devices, vol. 63, no. 4, pp. 1480–1488, Apr. 2016
46
Evolution of models for HEMTs
from MOSFET models
QM effect in MOSFETs – Why & What?
• Scaling of device dimensions
– Lower oxide thickness (< 2 nm)
– Higher doping conc. (> 1018 /cm3)
– Higher electric field
• Carriers are confined in a short
distance from the Si/SiO2
interface (2-Dimensional
Electron Gas or 2-DEG)
– Creation of sub-bands
• Classical theory no longer
sufficient for modelling
48
What is the result of QM effect?
• QM effects result in
– Increased effective bandgap
– Reduced inversion layer charge density
– Modified inversion layer charge profile
– Increased effective oxide thickness
– Reduced gate capacitance
– Modified surface potential
– Increased threshold voltage
– Modified carrier mobility
– Lower drain current
– Modified gate current
G.S. Jayadeva & A. DasGupta, “Quantum mechanical effects in bulk MOSFETs from
a compact modelling perspective: A review”, IETE Technical Review, vol. 29, no.1,
49
pp. 3 – 28, Jan-Feb 2012
Inversion charge concentration profile
a: classical
b: quantum mechanical
• Electron concentration
k BT EF Eij 2
n(z) 2 i di
gm *
ln 1 exp ij
i j k B T
52
Flowchart for self-consistent solution
53
Triangular potential well approximation
• Constant electric field
N. Karumuri, G. Dutta, N. DasGupta and A. DasGupta, “A compact model of drain current for
GaN HEMTs based on 2DEG charge linearization,” IEEE Trans. Electron Devices, vol. 63, no. 56
11,
pp. 4226-4232, Nov. 2016.
Add secondary effects
• Field dependent mobility
– Effect of both lateral and transverse field
• Velocity saturation of electrons
• Parasitic conduction in barrier layer
• Channel length modulation (CLM)
• Drain Induced barrier lowering (DIBL)
• Self-heating
• Capacitances
– for small signal and transient simulations
57
Modeling Access regions
• Access regions
modeled as HEMTs
– Unlike resistors in most
models
• Experimental results
show that access
regions have HEMT like
characteristics
– Current saturates due
to velocity saturation of
electrons
58
Model validation
1.5 µm
S 1.5 µm G 3 µm D
15 nm Al0.83 In0.17 N
GaN
Sapphire
1 µm 1 µm
S G 1 µm D
25 nm Al0.15 Ga0.85N
GaN
Sapphire
59
Model validation
1 µm 0.7 µm 1 µm
S G D
18 nm Al0.5 Ga0.5N
GaN
Sapphire
1 µm 0.35 µm 3 µm
S G D
30 nm Al0.15 GaN
GaN
SiC
60
Summary &Conclusions
• HEMTs have evolved from MOSFETs for high frequency (HF)
operation
– Pseudomorphic HEMTs provide best HF performance
• GaN based HEMTs are best suited for high frequency power
amplifiers and power switches
– Depletion mode operation due to Schottky gate
• MIS-HEMTs can provide
– Lower gate leakage
– Higher gate swing as gate voltage can be positive
• Enhancement mode AlInN/GaN MIS-HEMTs with RIS-Al2O3
demonstrated
• Model for GaN based HEMT developed
• Further need for model and technology development
• Lots of scope for research
61
THANK YOU
62