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Salifu 2002
Salifu 2002
Salifu 2002
Abstract
The accurate measurement of growth and etch rates during plasma processing is difficult, if not impossible, to achieve for
opaque, three-dimensional substrates. Sensing small weight changes that correspond to discontinuous film formation on a substrate
is also difficult with traditional optical methods. Using a gravimetric recording microbalance, we have successfully measured
small weight changes of aluminum samples during the pre-cleaning and nitriding stages in low temperature plasma. The data will
show that the microbalance can provide useful information about the rates of various processes within a plasma. The data can be
interpreted using reaction–diffusion equations to determine the relevant rate parameters for a plasma process. This approach can
be extended to the study of many materials including oxides, metals, and nitrides subjected to various processes including etching
and deposition.
䊚 2002 Elsevier Science B.V. All rights reserved.
Keywords: Microbalance; Plasma processing and deposition; Nitrides; Diffusion; Plasma chemistry
0040-6090/02/$ - see front matter 䊚 2002 Elsevier Science B.V. All rights reserved.
PII: S 0 0 4 0 - 6 0 9 0 Ž 0 2 . 0 0 6 9 6 - X
152 A. Salifu et al. / Thin Solid Films 418 (2002) 151–155
2. Experimental description
Table 1
Operating conditions for plasma nitriding w11x
Table 2
Dimensionless groups describing the inductively coupled plasma reactor