FTP09N90A

FTA09N90A
N-Channel MOSFET
Applications:
VDSS RDS(ON) (Max.) ID
• Adaptor
• LCD Panel Power 900V 1.40 : 9.0A

Features:
• Lead Free
• Low ON Resistance D
• Low Gate Charge
• Low Crss(typical 12pF)
• Improved dv/dt capability
G
D G G
Ordering Information S D
S
PART NUMBER PACKAGE BRAND
TO-220 TO-220F
FTP09N90A TO-220 FTP09N90A Not to Scale Not to Scale S
FTA09N90A TO-220F FTA09N90A

Absolute Maximum Ratings TC=25 oC unless otherwise specified

Symbol Parameter FTP09N90A FTA09N90A Units
VDSS Drain-to-Source Voltage (NOTE *1) 900 V
ID Continuous Drain Current 9.0 9.0*
o
ID@ 100 C Continuous Drain Current Figure 3 A
IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6
Power Dissipation 208 67 W
PD o o
Derating Factor above 25 C 1.67 0.54 W/ C
VGS Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Engergy
EAS 1000 mJ
L=20 mH, ID=10 Amps
IAS Pulsed Avalanche Rating Figure 8
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns
Maximum Temperature for Soldering
o
TL Leads at 0.063in (1.6mm) from Case for 10 seconds 300 C
TPKG Package Body for 10 seconds 260
Operating Junction and Storage
TJ and TSTG -55 to 150
Temperature Range

*Drain Current limited by Maximum Junction Temperature.

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.

Thermal Resistance
Symbol Parameter FTP09N90A FTA09N90A Units Test Conditions
Water cooled heatsink, PD adjusted for
RTJC Junction-to-Case 0.60 1.86 o
o
C/W a peak junction temperature of +150 C.
RTJA Junction-to-Ambient 62.5 62.5 1 cubic foot chamber, free air.

©2009 InPower Semiconductor Co., Ltd. Page 1 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 o
OFF Characteristics TJ=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 900 -- -- V VGS=0V, ID=250μA
o
BreakdownVoltage Temperature Reference to 25 C,
'BVDSS /' TJ -- -- o
V/ C
Coefficient, Figure 11. 0.99 ID=250μA

-- -- 10 VDS=900V, VGS=0V
IDSS Drain-to-Source Leakage Current μA
-- -- VDS=720V, VGS=0V
100 o
TJ=125 C
Gate-to-Source Forward Leakage -- -- 100 VGS=+30V
IGSS nA
Gate-to-Source Reverse Leakage -- -- -100 VGS= -30V

ON Characteristics TJ=25 oC unless otherwise specified

Symbol Parameter Min. Typ. Max. Units Test Conditions
Static Drain-to-Source On-Resistance VGS=10V, ID=4.8A
RDS(ON) -- 1.12 1.4 :
Figure 9 and 10. (NOTE *4)
VGS(TH) Gate Threshold Voltage, Figure 12. 3.0 -- 5.0 V VDS=VGS, ID=250PA

gfs Forward Transconductance 9.2 VDS=30V, ID=5.0A

-- -- S
(NOTE *4)

Dynamic Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance -- 2593 -- VGS=0V
Coss Output Capacitance -- 146 -- VDS=25V
pF
f =1.0MHz
Crss Reverse Transfer Capacitance -- 12 --
Figure 14
Qg Total Gate Charge -- 49 -- VDD=450V
ID=9.0A
Qgs Gate-to-Source Charge -- 13 -- nC
VGS=10 V
Qgd Gate-to-Drain (“Miller”) Charge -- 17 -- Figure 15

Resistive Switching Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Units Test Conditions
td(ON) Turn-on Delay Time -- 35 -- VDD=450V
trise Rise Time -- 41 -- ID=9.0A
ns
td(OFF) Turn-Off Delay Time -- 134 -- VGS=10V
tfall Fall Time -- 45 -- RG=25:

©2009 InPower Semiconductor Co., Ltd. Page 2 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 o
Source-Drain Diode Characteristics Tc=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) -- -- 9.0 A Integral pn-diode
ISM Maximum Pulsed Current (Body Diode) -- -- 36.0 A in MOSFET
VSD Diode Forward Voltage -- -- 1.5 V IS=8.0A, VGS=0V
trr Reverse Recovery Time -- 562 -- ns VGS=0V
Qrr Reverse Recovery Charge -- 3.5 -- μC IF=9.0A, di/dt=100 A/μs

Notes:

*1. TJ = +25 oC to +150 oC.

*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 9.0A di/dt < 100 A/μs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380μs; duty cycle < 2%.

©2009 InPower Semiconductor Co., Ltd. Page 3 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1.000
50%

20%
ZTJC, Thermal Impedance

10%
0.100 PDM
5%
(Normalized)

2% t1
t2
1%
0.010 NOTES:
single pulse DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZTJC x RTJC+TC

0.001

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

tp, Rectangular Pulse Duration (s)

Figure 2. Maximum Power Dissipation Figure 3. Maximum Continuous Drain Current

vs Case Temperature vs Case Temperature
10
200
PD, Power Dissipation (W)

8
ID, Drain Current (A)

150
6

100 4

50 2

0 0
25 50 75 100 125 150 25 50 75 100 125 150
o o
TC, Case Temperature ( C) TC, Case Temperature ( C)

Figure 4. Typical Output Characteristics Figure5. Typical Drain-to-Source ON Resistance

vs Gate Voltage and Drain Current

16 4
PULSE DURATION = 250 μS V PULSE DURATION = 250 μS
DUTY FACTOR = 0.5% MAX = 15
14 V GS DUTY FACTOR = 0.5% MAX
.0V
RDS(ON), Drain-to-Source

TC = 25 oC 6 TC = 25 oC
VGS =
ID, Drain Current (A)

ON Resistance (:

12 VGS = 5.75V 3

10 ID = 9A
VGS = 5.5V ID = 4.5A
8 2 ID = 2.2A
VGS = 5.25V
6 VGS = 5V

4 1
VGS = 4.5V
2

0 0
0 5 10 15 20 25 30 4 5 6 7 8 9 10 11 12 13 14 15

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

©2009 InPower Semiconductor Co., Ltd. Page 4 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 Figure 6. Maximum Peak Current Capability
1000
FOR TEMPERATURES
TRANSCONDUCTANCE
ABOVE 25 oC DERATE PEAK
MAY LIMIT CURRENT IN
CURRENT AS FOLLOWS:
THIS REGION
IDM, Peak Current (A)

, = ,   – 7 &-
--------------------
100 

10

VGS = 10V
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0

tp, Pulse Width (s)

Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive

Switching Capability
20 100.0
PULSE DURATION = 250 μs
ID, Drain-to-Source Current (A)

18 DUTY CYCLE = 0.5% MAX

VDS = 10 V
IAS, Avalanche Current (A)

16
14
10.0
12
STARTING TJ = 25 oC
10
STARTING TJ = 150 oC
8
1.0
6 +150 oC
4 +25 oC If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
-55 oC If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
2
R equals total Series resistance of Drain circuit
0 0.1
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3

VGS, Gate-to-Source Voltage (V) tAV, Time in Avalanche (s)

Figure 9. Typical Drain-to-Source ON Figure 10. Typical Drain-to-Source ON Resistance

Resistance vs Drain Current vs Junction Temperature
3.2 2.6
3.0 PULSE DURATION = 2 μs 2.4
DUTY CYCLE = 0.5% MAX
RDS(ON), Drain-to-Source
RDS(ON), Drain-to-Source

2.8 2.2
Resistance (Normalized)

TC=25°C
2.6 2.0
ON Resistance (:)

2.4 1.8
2.2 1.6
V = 10V 1.4
2.0 GS
1.8 1.2
1.6 1.0
1.4 0.8
1.2 0.6 PULSE DURATION = 250 μs
DUTY CYCLE = 0.5% MAX
1.0 0.4 VGS = 10V, ID = 6.0A
0.8 0.2
0 5 10 15 20 25 -75 -50 -25 0 25 50 75 100 125 150

ID, Drain Current (A) TJ, Junction Temperature (oC)

©2009 InPower Semiconductor Co., Ltd. Page 5 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 Figure 11. Typical Breakdown Voltage vs Figure 12. Typical Threshold Voltage vs
Junction Temperature Junction Temperature
1.15 1.2
Breakdown Voltage (Normalized)

VGS(TH), Threshold Voltage

1.1
BVDSS, Drain-to-Source

1.10

(Normalized)
1.0
1.05
0.9
1.00
0.8

0.95
VGS = 0V
0.7
VGS = VDS
ID = 250 μA ID = 250 μA
0.90 0.6
-75 -50 -25 0.0 25 50 75 100 125 150 -75 -50 -25 0.0 25 50 75 100 125 150
o o
TJ, Junction Temperature ( C) TJ, Junction Temperature ( C)

Figure 13. Maximum Forward Bias Safe Figure 14. Typical Capacitance vs
Operating Area Drain-to-Source Voltage
100.0 TJ = MAX RATED, TC = 25 oC 10000
Single Pulse
10μs

Ciss
C, Capacitance (pF)

10
ID, Drain Current (A)

0μ
10.0 s 1000

1.0
ms

10
1.0 m
s 100 Coss
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
OPERATION IN THIS AREA MAY DC Coss # Cds + Cgd
BE LIMITED BY R Crss
DS(ON) Crss = Cgd
0.1 10
1 10 100 1000 0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V)

Figure 15. Typical Gate Charge Figure 16. Typical Body Diode Transfer
vs Gate-to-Source Voltage Characteristics
12 80
VGS, Gate-to-Source Voltage (V)

ISD, Reverse Drain Current (A)

70
10
VDS = 225V 60
VDS = 450V 150 oC
8
VDS = 675V 50
o
25 C
6 40
-55 oC
30
4
20
2
ID = 9.0A
10
VGS = 0V
0 0
0 15 30 45 60 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

QG , Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V)

©2009 InPower Semiconductor Co., Ltd. Page 6 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 Test Circuits and Waveforms

VDS
ID
ID
VDS VGS
Miller
Region
VGS
VDD
D.U.T.
VGS(TH)

1 mA
Qgs Qgd
Qg

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform

VDS
RL 90%
VDS

VGS
VDD
RG D.U.T.
10%
VGS

td(ON) trise td(OFF) tfall

Figure 19. Resistive Switching Test Circuit Figure 20. Resistive Switching Waveforms

©2009 InPower Semiconductor Co., Ltd. Page 7 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
 Test Circuits and Waveforms

di/dt adj. Current

Pump

di/dt = 100A/μA
ID
Double Pulse

D.U.T. VDD
Qrr
L
trr

ID

Figure 22. Diode Reverse Recovery Waveform

Figure 21. Diode Reverse Recovery Test Circuit

BVDSS

Series Switch
(MOSFET)
L
IAS

BVDSS

D.U.T. VDD VDD

Commutating
Diode
0 tAV

VGS 50:
IAS
VGS tp

I AS 2 L
E AS
2

Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms

©2009 InPower Semiconductor Co., Ltd. Page 8 of 9 FTP09N90A/FTA09N90A REV. A Dec. 2009
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