F12C20C thru F12C60C ®

F12C20C thru F12C60C Pb

Pb Free Plating Product
12.0 Ampere Common Cathode Fast Recovery Rectifier Diode
TO-220AB Unit : inch (mm)
Feature .419(10.66) .196(5.00)
 Fast switching for high efficiency .387(9.85) .163(4.16)

 Low forward voltage drop .139(3.55)

MIN
.054(1.39)
.045(1.15)
 High current capability

.269(6.85)
.226(5.75)
 Low reverse leakage current

.624(15.87)
.548(13.93)
 High surge current capability
Application
 Automotive Environment(Inverters/Converters)
 Plating Power Supply,Adaptor,SMPS and UPS
 Car Audio Amplifiers and Sound Device System

.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX

Mechanical Data
.019(0.50)

 Case:TO-220AB Heatsink
 Epoxy: UL 94V-0 rate flame retardant
.1(2.54) .1(2.54)

 Terminals: Solderable per MIL-STD-202

method 208
 Polarity: As marked on diode body Case Case Case

 Mounting position: Any Positive Negative Doubler

Common Cathode Common Anode Tandem Polarity
 Weight: 2.2 gram approximately Suffix "C" Suffix "A" Suffix "D"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
F12C20C F12C40C F12C60C
SYMBOL F12C20A F12C40A F12C60A UNIT
F12C20D F12C40D F12C60D
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V

Maximum RMS Voltage VRMS 140 280 420 V

Maximum DC Blocking Voltage VDC 200 400 600 V

Maximum Average Forward Rectified

o IF(AV) 12.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 100 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 6.0 A

Maximum DC Reverse Current @TJ=25 C

o
10.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 65 pF

o
Typical Thermal Resistance (Note 3) R JC 2.2 CW
Operating Junction and Storage -55 to +150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 F12C20C thru F12C60C ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

12 100
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

(JEDEC Method)
10 80
CURRENT, AMPERES

AMPERES
7 60

5 40

2 20

60 Hz Resistive or
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
1000
IINSTANTANEOUS FORWARD CURRENT,

10
INSTANTANEOUS REVERSE CURRENT,

F12C20C
o
TJ=125 C
100
F12C40C
MICROAMPERES

6
F12C60C
AMPERES

10

o
TJ=25 C

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/