This document discusses the limitations of continuing to shrink traditional transistors and various proposed alternatives at the nanoscale. It describes how single-electron transistors operate similarly to today's transistors but do not employ quantum effects. Many proposed replacements do employ quantum interference and tunneling, such as quantum dots which control electron tunneling through an electric field. These quantum dot devices are already as small as 30 nanometers and are expected to shrink further. Additional proposed nanoscale devices that take advantage of quantum effects include resonant tunneling devices. Molecular-scale electronic devices have also been proposed, including a 1974 molecular diode and more recent proposals like a molecular shift register and atomic-scale switches.
This document discusses the limitations of continuing to shrink traditional transistors and various proposed alternatives at the nanoscale. It describes how single-electron transistors operate similarly to today's transistors but do not employ quantum effects. Many proposed replacements do employ quantum interference and tunneling, such as quantum dots which control electron tunneling through an electric field. These quantum dot devices are already as small as 30 nanometers and are expected to shrink further. Additional proposed nanoscale devices that take advantage of quantum effects include resonant tunneling devices. Molecular-scale electronic devices have also been proposed, including a 1974 molecular diode and more recent proposals like a molecular shift register and atomic-scale switches.
This document discusses the limitations of continuing to shrink traditional transistors and various proposed alternatives at the nanoscale. It describes how single-electron transistors operate similarly to today's transistors but do not employ quantum effects. Many proposed replacements do employ quantum interference and tunneling, such as quantum dots which control electron tunneling through an electric field. These quantum dot devices are already as small as 30 nanometers and are expected to shrink further. Additional proposed nanoscale devices that take advantage of quantum effects include resonant tunneling devices. Molecular-scale electronic devices have also been proposed, including a 1974 molecular diode and more recent proposals like a molecular shift register and atomic-scale switches.
This document discusses the limitations of continuing to shrink traditional transistors and various proposed alternatives at the nanoscale. It describes how single-electron transistors operate similarly to today's transistors but do not employ quantum effects. Many proposed replacements do employ quantum interference and tunneling, such as quantum dots which control electron tunneling through an electric field. These quantum dot devices are already as small as 30 nanometers and are expected to shrink further. Additional proposed nanoscale devices that take advantage of quantum effects include resonant tunneling devices. Molecular-scale electronic devices have also been proposed, including a 1974 molecular diode and more recent proposals like a molecular shift register and atomic-scale switches.
of electrons through barriers made from matter or electric fields, will begin to
dominate the essential effects
that permit a mass-action semiconductor device to operate [271]. Nonetheless, to maintain the current rate of advance in computer speed and information storage capacity, there must be continued increases in the density of computational elements on integrated circuit chips. This seems to mandate continued decreases in size for the transistor. Thus, it is evident that a change in the technology of the transistor will be necessary. Still, an electronic nanocomputer will continue to represent information in the storage and movement of electrons. To perform these functions on ever smaller scales a range of device technologies have been proposed to modify or replace the conventional microelectronic transistor. There are single- electron transistors that are in many ways similar to today�s microelectronic transistors, especially in their switching and amplification processes [157,192]. Although these devices operate by the movement of single electrons, they are not �quantumeffect� devices because they have high resistances intentionally designed to destroy quantum interference effects among the many electrons that occupy the volume of the device [193]. However, many of the devices that are the most widely investigated and discussed as nanometer-scale replacements for the transistor do employ quantum interference and tunneling�i.e., some of the same quantum effects that prevent much further shrinkage or �scaling� of bulk-effect transistors [27]. Quantum dots (or �artificial atoms�) govern tunneling of a small number of electrons through the influence of an electric field from a nearby gate electrode [158,248,249,306]. Present-day quantum dots can be made as small as 30 nanometers [231,290]. In the future, they are likely to be made even smaller. Also, the quantum dot devices are sensitive to and can take advantage of the presence or absence of the charges of single electrons. Other electronic nanodevices that take advantage of quantum mechanical effects, such as resonanttunneling devices, also have been proposed, fabricated, and used in experiments [57,110,271]. Still smaller molecular-scale electronic devices may be possible [140,232]. One of the first examples of a specific proposal for a molecular-scale electronic device was a rectifier proposed by Aviram and Ratner in 1974 [13]. The rectifier consisted of a single molecule that would demonstrate almost ideal diode characteristics in passing current preferentially in one direction. More recently, a molecular shift register that operates based on electron transfer has been proposed [142,311], a Japanese group has simulated atomic-scale switches [309], and a molecular �shuttle� switch has been synthesized [46]. Also, Drexler and Merkle have suggested a more radical construct that they term helical logic to be based upon the helical, atomic-scale motions of electrons in an applied, rotating electric field [217].