Elec Coaching 1 PDF

You might also like

Download as pdf or txt
Download as pdf or txt
You are on page 1of 12

Excel Review Center ECE Refresher/Coaching Course Elec TH 1

How many terminals does a diode have? Calculate the power dissipation of a diode
2 (Ans.) having ID = 40 mA.
28 W (Ans.)
What is the resistor value of an ideal diode in
the region of conduction? Which capacitor appears in the forward-bias
0  (Ans.) region?
4  (Ans.)
What is the state of an ideal diode in the region
of nonconduction? Which capacitor appears in the forward-bias
An open circuit (Ans.) region?
Diffusion (Ans.) 4.1 mA (Ans.)
The diode _____.
A. is the simplest of semiconductor devices At what kind of operating frequency diffusion In a particular problem, which mode has the
B. has characteristics that closely match those or transition is a capacitor represented in highest level of IDQ?
of a simple switch parallel with the ideal diode? Ideal (Ans.)
C. is a two-terminal device Very high frequency (Ans.)
D. All of the above (Ans.) A diode is in the "_____ " state if the current
What is the value of the transition capacitor for established by the applied sources is such that
The ideal diode is a(n) _____ circuit in the a silicon diode when VD = 0? (Choose the best its direction matches that of the arrow in the
region of nonconduction. answer.) diode symbol, and VD ≥ 0.7 V for Si and VD ≥
open (Ans.) 3 pF (Ans.) 0.3 V for Ge.
on (Ans.)
Which of the following is an atom composed Which of the following devices can check the
of? condition of a semiconductor diode? An open circuit can have any voltage across its
A. Electrons A. Digital display meter (DDM) terminals, but the current is always _____.
B. Protons B. Multimeter 0 V (Ans.)
C. Neutrons C. Curve tracer
D. All of the above (Ans.) D. All of the above (Ans.) A short circuit has a _____ drop across its
terminals, and the current is limited only by
How many orbiting electrons does the What does a high resistance reading in both the surrounding network.
germanium atom have? forward- and reverse-bias directions indicate? 0 V (Ans.)
14 (Ans.) An open diode (Ans.)
What is the logic function of this circuit?
How many valence electrons does a silicon The condition of a semiconductor diode can be
atom have? determined quickly using a _____.
4 (Ans.) A. DDM
B. VOM
One eV is equal to _____ J. C. curve tracer
1.6 × 10–19 (Ans.) D. Any of the above (Ans.)

Which of the following elements is most Determine the nominal voltage for the Zener
frequently used for doping pure Ge or Si? diode at a temperature of 120° C if the nominal
A. Boron voltage is 5.1 volts at 25° C and the Positive logic OR gate (Ans.)
B. Gallium temperature coefficient is 0.05%/° C.
C. Indium 5.34 V (Ans.) What is the logic function of this circuit?
D. All of the above (Ans.)
Calculate the temperature coefficient in %/° C
The diffused impurities with _____ valence of a 10-V nominal Zener diode at 25° C if the
electrons are called donor atoms. nominal voltage is 10.2 V at 100° C.
5 (Ans.) 0.0267 (Ans.)

In what state is a silicon diode if the voltage In which of the following color(s) is (are)
drop across it is about 0.7 V? LEDs presently available?
Forward bias (Ans.) A. Yellow
B. White
Positive logic AND gate (Ans.)
What unit is used to represent the level of a C. Orange
What best describes the circuit?
diode forward current IF? D. All of the above (Ans.)
mA (Ans.)
What is the maximum power rating for LEDs?
Which of the following ratings is true? 150 mW (Ans.)
Si diodes have higher PIV and wider
temperature ranges than Ge diodes. (Ans.) In which of the following is the light intensity
measured?
It is not uncommon for a germanium diode Candela (Ans.)
with an Is in the order of 1–2 µA at 25°C to Half-wave rectifier (Ans.)
have leakage current of 0.1 mA at a What is the range of the operating voltage
temperature of 100°C. level for LEDs? What best describes the circuit?
True (Ans.) 1.7–3.3 V (Ans.)

Calculate static resistance RD of a diode In general, LEDs operate at voltage levels


having ID = 30 mA and VD = 0.75 V. from _____ V to _____ V.
25  (Ans.) 1.7, 3.3 (Ans.)

Calculate ID if RD = 30 Ω and VD = 0.84 V. Which diode(s) has (have) a zero level current
28 mA (Ans.) and voltage drop in the ideal model?
Both Si and Ge (Ans.) Full-wave rectifier (Ans.)
The _____ diode model is employed most
frequently in the analysis of electronic Use the information provided here to List the categories of clippers.
systems. determine the value of IDQ. Parallel (Ans.)
simplified (Ans.)

1
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
What best describes the circuit? Which of the following is (are) the terminal(s) Calculate βdc at VCE = 15 V and IB = 30 μA.
of a transistor?
A. Emitter
B. Base
C. Collector
D. All of the above (Ans.)

List the types of bipolar junction transistors.


ppn, npn (Ans.)
Clipper (Ans.) Transistors are _____-terminal devices.
3 (Ans.)
Determine the total discharge time for the
capacitor in a clamper having C = 0.01 F and How many carriers participate in the injection
R = 500 k process of a unipolar device? 110 (Ans.)
25 ms (Ans.) 1 (Ans.)
Which of the following configurations can a
With this Zener diode in its "on state," what is Which component of the collector current IC is transistor set up?
the level of IZ for the maximum load called the leakage current? A. Common-base
resistance? Minority (Ans.) B. Common-emitter
C. Common-collector
For a properly biased pnp transistor, let IC = 10 D. All of the above (Ans.)
mA and IE = 10.2 mA. What is the level of IB?
200 μA (Ans.) Determine the value of α when β= 100.
0.99 (Ans.)
Calculate minority current ICO if IC = 20.002
mA and IC majority = 20 mA. What is the most frequently encountered
2 μA (Ans.) transistor configuration?
Common-emitter (Ans.)
IZM (Ans.) Which of the following regions is (are) part of
the output characteristics of a transistor? βdc for this set of collector characteristics is
In a voltage regulator network with fixed RL A. Active within _____ percent of βac.
and R, what element dictates the minimum B. Cutoff
level of source voltage? C. Saturation
IZ (Ans.) D. All of the above (Ans.)

Which element dictates the maximum level of In which region are both the collector-base and
source voltage? base-emitter junctions forward-biased?
Saturation (Ans.)

How much is the base-to-emitter voltage of a


transistor in the "on" state?
0.7 V (Ans.)

In the active region, while the collector-base


junction is _____-biased, the base-emitter is
10 (Ans.)
_____-biased.
reverse, forward (Ans.)
βdc = ________
IZM (Ans.) IC / IB (Ans.)
What is dc equal to?
IC / IE (Ans.)
What is the peak inverse voltage across each What is (are) the component(s) of most
diode in a voltage doubler? specification sheets provided by the
What are the ranges of the ac input and output
2Vm (Ans.) manufacturer?
resistance for a common-base configuration?
A. Maximum ratings
10–100 , 50 k –1 M (Ans.) B. Thermal characteristics
What is the voltage measured from the
negative terminal of C4 to the negative C. Electrical characteristics
For what kind of amplifications can the active D. All of the above (Ans.)
terminal of the transformer?
region of the common-emitter configuration be
used? What is (are) the component(s) of electrical
A. Voltage characteristics on the specification sheets?
B. Current A. On
C. Power B. Off
D. All of the above (Ans.) C. Small-signal characteristics
D. All of the above (Ans.)
Use this table of collector characteristics to
calculate βac at VCE = 15 V and IB = 30 μA. Most specification sheets are broken down into
20 V (Ans.) _____.
A. maximum ratings
B. thermal characteristics
In what decade was the first transistor
C. electrical characteristics
discovered?
D. All of the above (Ans.)
1940s (Ans.)
Which of the following equipment can check
How many layers of material does a transistor
the condition of a transistor?
have?
A. Current tracer
3 (Ans.)
B. Digital display meter (DDM)
C. Ohmmeter (VOM)
What is the ratio of the total width to that of
100 (Ans.) D. All of the above (Ans.)
the center layer for a transistor?
150:1 (Ans.)

2
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
Which of the following can be obtained from B. R1 and R2 are considered to be series Which of the following techniques can be used
the last scale factor of a curve tracer? elements in the sinusoidal ac analysis of transistor
hFE (Ans.) C. βRE ≥10R2 networks?
D. All of the above (Ans.) Small- or large-signal (Ans.)
Calculate βac for IC = 15 mA and VCE = 5 V.
Which of the following is (are) related to an What is the limit of the efficiency defined by =
emitter-follower configuration? Po / Pi?
A. The input and output signals are in phase. Less than or equal to 1 (Ans.)
B. The voltage gain is slightly less than 1.
C. Output is drawn from the emitter terminal. Which of the following define(s) the
D. All of the above (Ans.) conversion efficiency?
AC power to the load/dc power supplied
Which of the following is (are) the (Ans.)
application(s) of a transistor?
A. Amplification of signal Which of the following should be done to
B. Switching and control obtain the ac equivalent of a network?
C. Computer logic circuitry A. Set all dc sources to zero
200 (Ans.)
D. All of the above (Ans.) B. Replace all capacitors by a short-circuit
equivalent.
What range of resistor values would you get
Calculate the storage time in a transistor C. Remove all elements bypassed by the short-
when checking a transistor for forward- and
switching network if toff is 56 ns, tf = 14 ns, circuit equivalent.
reverse-biased conditions by an ohmmeter?
and tr = 20 ns. D. All of the above (Ans.)
100 to a few k , exceeding 100 k (Ans.) 42 ns (Ans.)
The _____ model suffers from being limited to
What does a reading of a large or small The total time required for the transistor to a particular set of operating conditions if it is
resistance in forward- and reverse-biased switch from the "off" to the "on" state is to be considered accurate.
conditions indicate when checking a transistor designated as ton and defined as the delay time hybrid equivalent (Ans.)
using an ohmmeter? plus the time element.
Faulty device (Ans.) True (Ans.) The _____ model fails to account for the
output impedance level of the device and the
A transistor can be checked using a(n) _____. For the typical transistor amplifier in the active feedback effect from output to input.
A. curve tracer region, VCE is usually about _____ % to _____ re (Ans.)
B. digital meter % of VCC.
C. ohmmeter 25, 75 (Ans.) Which of the following is (are) true regarding
D. Any of the above (Ans.) the input impedance for frequencies in the
Which of the following is (are) a stability midrange ≤100 kHz of a BJT transistor
How many individual pnp silicon transistors factor? amplifier?
can be housed in a 14-pin plastic dual-in-line A. S(ICO) A. The input impedance is purely resistive.
package? B. S(VBE) B. It varies from a few ohms to megohms.
4 (Ans.) C. S(β) C. An ohmmeter cannot be used to measure
D. All of the above (Ans.) the small-signal ac input impedance.
Which of the following currents is nearly equal D. All of the above (Ans.)
to each other? In a fixed-bias circuit, which one of the
IE and IC (Ans.) stability factors overrides the other factors? Which of the following is (are) true regarding
S(β) (Ans.) the output impedance for frequencies in the
The ratio of which two currents is represented midrange ≤100 kHz of a BJT transistor
by β? In a voltage-divider circuit, which one of the amplifier?
IC and IB (Ans.) stability factors has the least effect on the A. The output impedance is purely resistive.
device at very high temperature? B. It varies from a few ohms to more than 2
At what region of operation is the base-emitter S(β) (Ans.) MΩ.
junction forward biased and the base-collector C. An ohmmeter cannot be used to measure
junction reverse biased? Use this table to determine the change in IC the small-signal ac output impedance.
Linear or active (Ans.) from 25ºC to 175ºC for RB / RE = 250 due to D. All of the above (Ans.)
the S(ICO) stability factor.
The cutoff region is defined by IB _____ 0 A. What is the range of the current gain for BJT
≤ (Ans.) transistor amplifiers?
A. less than 1
The saturation region is defined by VCE _____ B. 1 to 100
VCEsat. C. above 100
≤ (Ans.) D. All of the above (Ans.)
140.34 A (Ans.)
For the BJT to operate in the active (linear) The input impedance of a BJT amplifier is
region, the base-emitter junction must be Determine the change in IC from 25ºC to purely _____ in nature and can vary from a
_____-biased and the base-collector junction 175ºC for the transistor defined in this table for few _____ to _____.
must be _____-biased. fixed-bias with RB = 240 kΩ and β= 100 due resistive, ohms, megohms (Ans.)
forward, reverse (Ans.) to the S(VBE) stability factor.
For BJT amplifiers, the _____ gain typically
For the BJT to operate in the saturation region, ranges from a level just less than 1 to a level
the base-emitter junction must be _____- that may exceed 1000.
biased and the base-collector junction must be
current (Ans.)
_____-biased.
forward, forward (Ans.) What is the unit of the parameter ho?
145.8 μA (Ans.)
Siemen (Ans.)
Which of the following voltages must have a
negative level (value) in any npn bias circuit? Determine ICQ at a temperature of 175º C if ICQ Which of the h-parameters corresponds to r e in
VBC (Ans.) = 2 mA at 25º C for RB / RE = 20 due to the a common-base configuration?
S(β) stability factor. hib (Ans.)
Which of the following is assumed in the 2.417 mA (Ans.)
approximate analysis of a voltage divider What is the range of the input impedance of a
circuit? common-base configuration?
A. IB is essentially zero amperes.
3
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
A few ohms to a maximum of 50 (Ans.) D. All of the above (Ans.)
Which of the following represent(s) the
What is the typical value of the current gain of advantage(s) of the system approach over the At which of the following condition(s) is the
a common-base configuration? r-model approach? depletion region uniform?
Less than 1 (Ans.) A. Thevenin's theorem can be used. No bias (Ans.)
B. The effect of changing the load can be
What is the controlling current in a common- determined by a simple equation. What is the level of drain current ID for gate-
base configuration? C. There is no need to go back to the ac to-source voltages VGS less than (more
Ie (Ans.) equivalent model and analyze the entire negative than) the pinch-off level?
network. zero amperes (Ans.)
What is the typical range of the output D. All of the above (Ans.)
impedance of a common-emitter The three terminals of the JFET are the _____,
configuration? Which of the following is (are) true to achieve _____, and _____.
40 kΩ to 50 kΩ (Ans.) a good overall voltage gain for the circuit? gate, drain, source (Ans.)
The effect of Rs and RL must be considered as
Under which of the following conditions is the a product and evaluated individually. (Ans.) The level of VGS that results in ID = 0 mA is
output impedance of the network defined by VGS = _____.
approximately equal to RC for a common- The _____ the source resistance and/or _____ VP (Ans.)
emitter fixed-bias configuration? the load resistance, the less the overall gain of
ro ≥10RC (Ans.) an amplifier. The region to the left of the pinch-off locus is
larger, smaller (Ans.) referred to as the _____ region.
Under which of the following condition(s) is ohmic (Ans.)
the current gain A v   ? The current gain for the Darlington connection
is _____. Which of the following represent(s) the cutoff
ro ≥10RC and RB ≥10re (Ans.)
β1 . β2 (Ans.) region for an FET?
A. ID = 0 mA
What does the negative sign in the voltage
What is the voltage gain of a feedback pair B. VGS = VP
gain of the common-emitter fixed-bias
connection? C. IG = 0
configuration indicate?
1 (Ans.) D. All of the above (Ans.)
The output and input voltages are 180º out of
phase. (Ans.)
Which of the following circuits provides an What is the ratio of ID / IDSS for VGS = 0.5 VP?
improved constant-current source? 0.25 (Ans.)
For the common-emitter fixed-bias
configuration, there is a _____ phase shift Transistor/zener (Ans.)
The drain current will always be one-fourth of
between the input and output signals.
Which of the following is referred to as the IDSS as long as the gate-to-source voltage is
180º (Ans.)
reverse transfer voltage ratio? _____ the pinch-off value.
Which of the following configurations has an hr (Ans.) one-half (Ans.)
output impedance Zo equal to RC?
A. Fixed-bias common-emitter In an unbypassed emitter bias configuration h ie Which of the following ratings appear(s) in the
replaces _____ in the re model. specification sheet for an FET?
B. Common-emitter voltage-divider with
bypass capacitor βre (Ans.) A. Voltages between specific terminals
B. Current levels
C. Common-emitter voltage-divider without
bypass capacitor Which of the following controls the level of C. Power dissipation
ID? D. All of the above (Ans.)
D. All of the above (Ans.)
VGS (Ans.)
Refer to this portion of a specification sheet.
Which of the following configurations has a
voltage gain of –RC /re? Which of the following is (are) an FET? Determine the values of reverse-gate-source
p-n channel (Ans.) voltage and gate current if the FET was forced
Fixed-bias common-emitter and voltage-
to accept it.
divider with bypass capacitor(Ans.)
What is the range of an FET's input
Which of the following configurations has the impedance?
lowest output impedance? 1 M to several hundred M (Ans.)
Emitter-follower (Ans.)
Which of the following transistor(s) has (have)
The _____ configuration is frequently used for depletion and enhancement types?
impedance matching. MOSFET (Ans.)
voltage-divider bias (Ans.)
A BJT is a _____-controlled device. The JFET
The emitter-follower configuration has a is a _____ - controlled device. –25 Vdc, 10 mAdc (Ans.)
_____ impedance at the input and a _____ current, voltage (Ans.)
impedance at the output. Hand-held instruments are available to
high, low (Ans.) The BJT is a _____ device. The FET is a measure _____ for the BJT.
_____ device. IDSS (Ans.)
Which of the following gains is less than 1 for bipolar, unipolar (Ans.)
a common-base configuration? How many terminals can a MOSFET have?
Ai (Ans.) List the terminal(s) of a field-effect transistor 3 or 4 (Ans.)
(FET).
Which of the following conditions must be met A. Drain Which of the following applies to MOSFETs?
to allow the use of the approximate approach B. Gate A. No direct electrical connection between the
in a voltage-divider bias configuration? C. Source gate terminal and the channel
βre < 10R2 (Ans.) D. All of the above (Ans.) B. Desirable high input impedance
C. Uses metal for the gate, drain, and source
Which one of the following configurations has What is the level of IG in an FET? connections
the lowest input impedance? Zero amperes (Ans.) D. All of the above (Ans.)
Common-base (Ans.)
At which of the following is the level of VDS It is the insulating layer of _____ in the
For the collector dc feedback configuration, equal to the pinch-off voltage? MOSFET construction that accounts for the
there is a _____ phase shift between the input A. When ID becomes equal to IDSS very desirable high input impedance of the
and output signals. B. When VGS is zero volts device.
180º (Ans.) C. IG is zero SiO2 (Ans.)

4
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
The transfer curve is not defined by Shockley's For what value of RD is the voltage across VDS What is (are) the function(s) of the coupling
equation for the _____. zero? capacitors C1 and C2 in an FET circuit?
enhancement-type MOSFET (Ans.) 5.167 k (Ans.) A. to create an open circuit for dc analysis
B. to isolate the dc biasing arrangement from
Which of the following applies to a safe Which of the following describe(s) the the applied signal and load
MOSFET handling? difference(s) between JFETs and depletion- C. to create a short-circuit equivalent for ac
A. Always pick up the transistor by the casing. type MOSFETs? analysis
B. Power should always be off when network A. VGS can be positive or negative for the D. All of the above (Ans.)
changes are made. depletion-type.
C. Always touch ground before handling the B. ID can exceed IDSS for the depletion-type. Where do you get the level of gm and rd for an
device. C. The depletion-type can operate in the FET transistor?
D. All of the above (Ans.) enhancement mode. A. from the dc biasing arrangement
D. All of the above (Ans.) B. from the specification sheet
What is the purpose of adding two Zener C. from the characteristics
diodes to the MOSFET in this figure? On the universal JFET bias curve, the vertical D. All of the above (Ans.)
scale labeled _____ can, in itself, be used to
find the solution to _____ configurations. Which of the following is a required condition
m, fixed-bias (Ans.) to simplify the equations for Zo and Av for the
self-bias configuration?
Through proper design, a ______ can be rd ≥10RD (Ans.)
introduced that will affect the biasing level of
a voltage-controlled JFET resistor. On which of the following parameters does rd
thermistor (Ans.) have no or little impact in a source-follower
configuration?
To protect the MOSFET for both polarities For the noninverting amplifier, one of the most A. Zi
(Ans.) important advantages associated with using a B. Zo
JFET for control is the fact that it is _____ C. Av
Which of the following is (are) the rather than _____ control. D. All of the above (Ans.)
advantage(s) of VMOS over MOSFETs? dc, ac (Ans.)
A. Reduced channel resistance Which of the following is (are) related to
B. Higher current and power ratings FET amplifiers provide ________. depletion-type MOSFETs?
C. Faster switching time A. excellent voltage gain A.VGSQ can be negative, zero, or positive.
D. All of the above (Ans.) B. high input impedance B. gm can be greater or smaller than gm0.
C. low power consumption C. ID can be larger than IDSS.
Which of the following FETs has the lowest D. All of the above (Ans.) D. All of the above (Ans.)
input impedance?
JFET (Ans.) The E-MOSFET is quite popular in ________ For an FET small-signal amplifier, one could
applications. go about troubleshooting a circuit by
Which of the following input impedances is A. digital circuitry ________.
not valid for a JFET? B. high-frequency A. viewing the circuit board for poor solder
108 Ω (Ans.) C. buffering joints
D. All of the above (Ans.) B. using a dc meter
What is the approximate current level in the C. applying a test ac signal
gate of an FET in dc analysis? What is the range of gm for JFETs? D. All of the above (Ans.)
0 A (Ans.) 1000 μS to 5000 μS (Ans.)
What is the ratio of the common logarithm of a
Which of the following current equations is For what value of ID is gm equal to 0.5 gm0? number to its natural logarithm?
true? 0.25 IDSS (Ans.) 2.3 (Ans.)
ID = IS (Ans.)
What is the typical value for the input By what factor does an audio level change if
For the FET, the relationship between the impedance Zi for JFETs? the power level changes from 16 W to 1024
input and output quantities is _____ due to the 1000 M (Ans.) W?
_____ term in Shockley's equation. 8 (Ans.)
nonlinear, squared (Ans.) Use the following equation to calculate gm for
a JFET having IDSS = 10 mA, VP = –5 V, and The input power to a device is 10,000 W at
The input controlling variable for a(n) _____ is VGSQ = –2.5 V. 1000 V. The output power is 500 W, and the
a current level and a voltage level for a(n) output impedance is 100 . Find the voltage
_____. gain in decibels.
BJT, FET (Ans.) –13.01 dB (Ans.)

The self-bias configuration eliminates the need What magnitude voltage gain corresponds to a
for two dc supplies. decibel gain of 50?
True (Ans.) 2 mS (Ans.) 316.238 (Ans.)

Which of the following is (are) true of a self- The steeper the slope of the ID versus VGS An amplifier rated at 30-W output is connected
bias configuration compared to a fixed-bias curve, the ________ the level of gm. to a 5-Ω speaker. Calculate the input power
configuration? less (Ans.) required for full power output if the power
A. One of the dc supplies is eliminated. gain is 20 dB.
B. A resistor RS is added. When VGS = 0.5, gm is ________ the 300 mW (Ans.)
C. VGS is a function of the output current ID. maximum value.
D. All of the above (Ans.) one-half (Ans.) An amplifier rated at 30-W output is connected
to a 5-Ω speaker. Calculate the input voltage
Which of the following represents the voltage If ID = IDSS / 2, gm = ___________ gmo. for the rated output if the amplifier voltage
level of VGS in a self-bias configuration? 0.707 (Ans.) gain is 20 dB.
VS (Ans.) 1.225 V (Ans.)
The more horizontal the characteristic curves
Which of the following is a false statement on the drain characteristics, the ________ the For audio systems, the reference level is
regarding the dc load line when comparing output impedance. generally accepted as ________.
self-bias and voltage-divider configurations? greater (Ans.) 1 mW (Ans.)
Both cross the origin. (Ans.)
5
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
For which of the following frequency region(s) 10 (Ans.) single-ended input (Ans.)
can the coupling and bypass capacitors no
longer be replaced by the short-circuit For the low-frequency response of a BJT
approximation? amplifier, the maximum gain is where This circuit is an example of a _____.
Low-frequency (Ans.) ________ .
RE = 0 Ω (Ans.)
By what other name(s) are the cutoff
frequencies in a frequency response plot Which of the low-frequency cutoffs
called? determined by CS, CC, or CE will be the
A. Corner frequency predominant factor in determining the low-
B. Break frequency frequency response for the complete system?
C. Half-power frequency lowest (Ans.)
D. All of the above (Ans.)
Which of the following elements is (are)
What is the ratio of the output power to the important in determining the gain of the double-ended (differential) input (Ans.)
input power at the cutoff frequencies in a system in the high-frequency region?
normalized frequency response plot? A. Interelectrode capacitances
This circuit is an example of a _____.
0.50 (Ans.) B. Wiring capacitances
C. Miller effect capacitance
What is the ratio of the output voltage to the D. All of the above (Ans.)
input voltage at the cutoff frequencies in a
normalized frequency response plot? In the ________-frequency region, the
0.707 (Ans.) capacitive elements of importance are the
interelectrode (between terminals)
What is the normalized gain expressed in dB capacitances internal to the active device and
for the cutoff frequencies? the wiring capacitance between the leads of the
–3 dB (Ans.) network. double-ended output (Ans.)
high (Ans.)
The ________-frequency response is This circuit is an example of a _____.
calculated primarily by the stray capacitance Which of the following capacitors is (are)
between the turns of the primary and included in Ci for the high-frequency region of
secondary windings. a BJT or FET amplifier?
high (Ans.) A. Input wiring capacitance
B. The transition capacitance)
The larger capacitive elements of the design C. Miller capacitance
will determine the ________ cutoff frequency. D. All of the above (Ans.)
low (Ans.)
In the hybrid π or Giacoletto model, which one
The smaller capacitive elements of the design of the following does rb include? common-mode operation (Ans.)
will determine the ________ cutoff A. Base spreading resistance
frequencies. B. Base contact In which of the following operations is the
high (Ans.) C. Base bulk resulting output signal of the differential
D. All of the above (Ans.) amplifier near zero?
What is the ratio of the capacitive reactance Single-ended (Ans.)
XCS to the input resistance R I of the input RC Which of the following configurations does
circuit of a single-stage BJT amplifier at the (do) not involve the Miller effect capacitance? In the differential amplifier circuit, which of
low-frequency cutoff? Common-base (Ans.) the following terminals are connected
1.0 (Ans.) together?
A 3-dB drop in hfe will occur at a frequency Bases (Ans.)
In the input RC circuit of a single-stage BJT, defined by ________.
by how much does the base voltage lead the fβ (Ans.) Which of the following circuits is referred to
input voltage for frequencies much larger than as a BiMOS circuit?
the cutoff frequency in the low-frequency What is the range of the capacitors C gs and Bipolar and MOSFET (Ans.)
region? Cgd?
About 90º (Ans.) 1 to 10 pF (Ans.) An IC unit made using both _____ and _____
transistors is called a _____ circuit.
In the input RC circuit of a single-stage BJT, What is the range of the capacitor Cds? bipolar, MOSFET, BiMOS (Ans.)
by how much does the base voltage lead the 0.1 to 1 pF (Ans.)
input voltage at the cutoff frequency in the What is the level of the voltage between the
low-frequency region? Which of the following statements is true for a input terminals of an op-amp?
About 0º (Ans.) square-wave signal? Virtually zero (Ans.)
It is composed only of odd harmonics. (Ans.)
Determine the break frequency for this circuit. What is the level of the current through the
In which of the following are operational amplifier input(s) to ground in an op-amp?
amplifiers (op-amps) used? Virtually zero (Ans.)
A. Oscillators
B. Filters If Rf = R1, the voltage gain is _____.
C. Instrumentation circuits
D. All of the above (Ans.)

This circuit is an example of a _____.

31.85 Hz (Ans.)

A change in frequency by a factor of


________ is equivalent to 1 octave.
2 (Ans.) –1 (Ans.)
A change in frequency by a factor of
________ is equivalent to 1 decade.
6
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
Calculate the overall voltage gain of the circuit Vi1 = –Vi22 = 0.50 V (Ans.)
if R1 = 100 and Rf = 1 kΩ.
How many op-amps are required to implement
this equation?

differentiator (Ans.)

Which of the following circuit conditions 3 (Ans.)


–10 (Ans.) affect(s) the output offset voltage of an op-
amp? How many op-amps are required to implement
Calculate the overall voltage gain of the circuit Both an input offset voltage, VIO and an this equation?
if R1 = 100 Ω and Rf = 1 kΩ. input offset current, IIO (Ans.)

What is the level of the roll-off in most op-


amps?
–20 dB / decade or –6 dB / octave (Ans.)
2 (Ans.)
Which of the following is (are) the result of
gain reduction by a feedback? How many op-amps are required to implement
A. The amplifier voltage gain is a more stable this equation?
and precise value.
B. The input impedance of the circuit is
increased over that of the op-amp alone.
11 (Ans.) C. The output impedance is reduced over that
of the op-amp alone.
What is the voltage gain of the unity follower? D. All of the above (Ans.) 1 (Ans.)
1 (Ans.)
What is the open-loop gain of an op-amp at the How many op-amps are required to implement
Calculate the input voltage if R1 = 100 Ω, Rf = gain-bandwidth product of the op-amp? this equation?
1 kΩ, and Vout = 550 mV. 1 (Ans.) 1 (Ans.)
What is the cutoff frequency of an op-amp if An example of an instrumentation circuit is
the unity-gain frequency is 1.5 MHz and the a(n) _____.
open-loop gain is 100,000? A. dc voltmeter
15 Hz (Ans.) B. display driver
C. ac voltmeter
What is the slew rate of an op-amp if the D. All of the above (Ans.)
output voltages change from 2 V to 3 V in 0.2
ms? This circuit is an example of a(n)________.
5 V/ms (Ans.)
50 mV (Ans.)
For an op-amp having a slew rate SR = 5
What is the scale multiplier (factor) of a basic V/ms, what is the maximum closed-loop
integrator? voltage gain that can be used when the input
–1 / RC (Ans.) signal varies by 0.2 V in 10 ms?
150 (Ans.)
The summing amplifier contains an inverting
amplifier. Calculate the output impedance of an inverting
True (Ans.) op-amp using the 741 op-amp (ro = 75 Ω, AOL
= 200 V/mV) if R1 = 100 Ω and Rf = 1 kΩ. A. dc voltmeter
This circuit is referred to as a(n) _____. 0.00375 (Ans.) B. display driver
C. instrumentation amplifier
What is the difference output voltage of any D. None of the above (Ans.)
signals applied to the input terminals?
The sum of the differential gain times the A filter that provides a constant output from dc
difference input voltage and the common- up to a cutoff frequency and passes no signal
mode gain times the common input voltage. above that frequency is called a _____ filter.
(Ans.) low-pass (Ans.)

What is the difference voltage if the inputs are Which of the following is (are) power
inverting amplifier (Ans.) an ideal opposite signal? amplifiers?
The common-mode gain times twice the input A. Class A
This circuit is referred to as a(n) _____.
signal. (Ans.) B. Class B or AB
C. Class C or D
What is the difference voltage if the inputs are D. All of the above (Ans.)
an ideal in-phase signal?
The common-mode gain times the input By how much does the output signal vary for a
signal. (Ans.) class AB power amplifier?
Between 180º and 360º (Ans.)
At what input voltage level does the output
voltage level become numerically equal to the Which type of power amplifier is biased for
value of the differential gain of the amplifier? operation at less than 180º of the cycle?
integrator (Ans.) V i1 = –V i2 = 0.50 V (Ans.) Class C (Ans.)

This circuit is referred to as a(n) _____. At what input voltage level does the output Which type of amplifier uses pulse (digital)
voltage level become numerically equal to the signals in its operation?
value of the common-mode gain of the Class D (Ans.)
amplifier?
7
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
Which of the power amplifiers has the lowest What transformer turns ratio is required to Which of the power amplifiers is not intended
overall efficiency? match an 8-Ω speaker load so that the effective primarily for large-signal or power
Class A (Ans.) load resistance seen at the primary is 12.8 kΩ? amplification?
40:1 (Ans.) Class C (Ans.)
Which of the following describe(s) a power
amplifier? Calculate the efficiency of a transformer- Determine what maximum dissipation will be
A. It can handle large power. coupled class A amplifier for a supply of 15 V allowed for a 70-W silicon transistor (rated at
B. It can handle large current. and an output of V(p) = 10 V. 25ºC) if derating is required above 25ºC by a
C. It does not provide much voltage gain. 33.3% (Ans.) derating factor of 0.6 W/ºC at a case
D. All of the above (Ans.) temperature of 100º.
The maximum efficiency of a transformer- 25 W (Ans.)
_____ amplifiers primarily provide sufficient coupled class A amplifier is _____.
power to an output load to drive a speaker 50% (Ans.) A silicon power transistor is operated with a
from a few watts to tens of watts. heat sink (θ SA = 1.5ºC/W). The transistor,
Power (Ans.) What is the maximum efficiency of a class B rated at 150 W (25ºC), has θ JC = 0.5º C/W,
circuit? and the mounting insulation has θ CS = 0.6
The main features of a large-signal amplifier is 8.5% (Ans.) ºC/W. What is the maximum power that can be
the circuit's ______. dissipated if the ambient temperature is 50ºC
A. power efficiency How many transistors must be used in a class and TJmax = 200 ºC?
B. maximum power limitations B power amplifier to obtain the output for the 57.7 W (Ans.)
C. impedance matching to the output device full cycle of the signal?
D. All of the above (Ans.) 2 (Ans.) Which of the following transistors has been
quite popular as the driver device for class D
This is an example of the output swing for a In class B operation, at what fraction of VCC amplification?
class _____ amplifier. should the level of VL(p) be to achieve the MOSFET (Ans.)
maximum power dissipated by the output
transistor? Which of the following is not a linear/digital
0.636 (Ans.) IC?
Passive filter (Ans.)
Class B operation is provided when the dc bias
leaves the transistor biased just off, the Which of the following circuits is (are)
transistor turning on when the ac signal is linear/digital ICs?
applied. A. Comparators
True (Ans.) B. Timers
C. Voltage-controlled oscillators
Calculate the efficiency of a class B amplifier D. All of the above (Ans.)
A (Ans.) for a supply voltage of VCC = 20 V with peak
output voltage of VL(p) = 18 V. Which of the following is (are) the results of
This is an example of the output swing for a
70.69% (Ans.) improvements built into a comparator IC?
class _____ amplifier.
A. Faster switching between the two output
Which of the following is (are) the levels
disadvantage(s) of a class B complementary- B. Noise immunity
symmetry circuit? C. Outputs capable of directly driving a variety
A. It needs two separate voltage sources. of loads
B. There is crossover distortion in the output D. All of the above (Ans.)
signal.
C. It does not provide exact switching of one How many comparators does a 339 IC
transistor off and the other on at the zero- contain?
voltage condition. 4 (Ans.)
D. All of the above (Ans.)
B (Ans.) This circuit is an example of a ______.
Which of the push-pull amplifiers is presently comparator (Ans.)
Class AB operation is _____ operation. the most popular form of the class B power
A. similar to class A amplifier? A 311 IC is an example of an eight-pin DIP
B. similar to class B Quasi-complementary (Ans.) that can be made to function as a _____.
C. similar to class C comparator (Ans.)
D. None of the above (Ans.) nMOS and pMOS transistors can be used for
class B. A 339 IC is an example of a fourteen-pin DIP
Which operation class is generally used in True (Ans.) that can be made to function as a _____.
radio or communications? comparator (Ans.)
C (Ans.) Calculate the harmonic distortion component
for an output signal having a fundamental What is the function of a ladder network?
Categorize the power efficiency of each class amplitude of 3 V and a second harmonic Changing a digital signal to an analog signal
of amplifier, from worst to best. amplitude of 0.25 V. (Ans.)
A, AB, B, D (Ans.) 83.3% (Ans.) What is (are) the level(s) of the input voltage
to a ladder-network conversion?
What is the maximum efficiency of a class A Which of the following instruments displays 0 V or Vref (Ans.)
circuit with a direct or series-fed load the harmonics of a distorted signal?
connection? Spectrum analyzer (Ans.) What is the level of the output voltage of a
25% (Ans.) ladder-network conversion?
Which of the following instruments allows The analog output voltage proportional to the
What is the ratio of the secondary voltage to more precise measurement of the harmonic digital input voltage (Ans.)
the primary voltage with the turn ratio in the components of a distorted signal?
windings? Wave analyzer (Ans.) What is the voltage resolution of an 8-stage
N1/N2 (Ans.) ladder network?
What is the maximum temperature rating for Vref /256 (Ans.)
Calculate the effective resistance seen looking silicon power transistors? Which of the slope intervals of the integrator
into the primary of a 20:1 transformer 150º to 200º (Ans.) does the counter in the analog-to-digital
connected to an 8-Ω load. converter (ADC) operate?
3.2 kΩ Both positive and negative (Ans.)

8
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
What is the first phase of the dual-slope Which application best describes this 555 What is the ratio of the input impedance with
method of conversion? timer circuit? series feedback to that without feedback?
Connecting the analog voltage to the 1  A (Ans.)
integrator for a fixed time (Ans.)
What is the ratio of the output impedance with
When is the counter set to zero in the dual- series feedback to that without feedback?
slope method of conversion?
1  A (Ans.)
At the end of the charging of the capacitor
(Ans.)
The frequency distortion arising because of
Which of the following devices is (are) a varying amplifier gain with frequency is
component of a digital-to-analog converter considerably reduced in a negative-voltage
(DAC)? feedback amplifier circuit.
A. Integrator True (Ans.)
B. Comparator Monostable multivibrator (Ans.)
C. Digital counter Determine the voltage gain with feedback for a
D. All of the above (Ans.) Which of the following best describes the voltage-series feedback having A = –100, R1 =
output of a 566 voltage-controlled oscillator? 15 kΩ, Ro = 20 kΩ, and a feedback of β= –
At which of the following period(s) is the Both square- and triangular- wave (Ans.) 0.25.
counter advanced (incremented) in dual-slope –3.85 (Ans.)
conversion? Which of the following best describes
During the discharging of the capacitor of limitations for the 566 VCO? Determine the input impedance with feedback
the integrator (Ans.) A. 2k  R1  20k for a voltage-series feedback having A = –100,
  R1 = 15 kΩ, Ro = 20 kΩ, and a feedback of β=
B. 0.75V  VC  V –0.25.
What is (are) the input(s) to the comparator in
C. fo < 1 MHz 390 kΩ (Ans.)
the ladder-network conversion of an ADC?
D. All of the above (Ans.) Determine the output impedance with
Both staircase and analog input voltage
(Ans.) feedback for a voltage-series feedback having
Determine the free-running frequency for this A = –100, R1 = 15 kΩ, Ro = 20 kΩ, and a
What is the maximum conversion time of a
circuit. feedback of β= –0.25.
clock rate of 1 MHz operating a 10-stage
53.33 kHz (Ans.) 769.23 Ω (Ans.)
counter in an ADC? An amplifier with a gain of –500 and a
1.024 ms n(Ans.)
Determine the free-running frequency when R3 feedback of β= –0.1 has a gain change of 15%
is set to 2.5 kΩ. due to temperature. Calculate the change in
116.39 kHz (Ans.) gain of the feedback amplifier.
What is the minimum number of conversions
per second of a clock rate of 1 MHz operating 0.3% (Ans.)
The voltage-controlled oscillator is a subset of Referring to this figure, calculate the
a 10-stage counter in an ADC?
the "test bench" function generator. amplification gain with feedback for the
976 (Ans.)
True (Ans.) following circuit values: R1 = 80 kΩ, R2 = 20
On which of the following does the conversion kΩ, Ro = 10 kΩ, RD = 61 kΩ, and gm = 4000
Which of the following applications include a mS.
depend in ladder-network conversion?
phase-locked loop (PLL) circuit?
Comparator (Ans.)
A. Modems
B. Am decoders
This circuit is an example of a _____.
C. Tracking filters
All of the above (Ans.)

How many Vcc connections does the 565 PLL


use?
2 (Ans.)

The timing components for a PLL are 15 kΩ


–3.75 (Ans.)
and 220 pF. Calculate the free-running
ladder network (Ans.)
frequency.
Referring to this figure, calculate the
This figure is a block diagram of a(n) _____. 90.91 kHz (Ans.) amplification gain where the op-amp gain (A)
is 200,000, R1 = 1.5 kΩ, and R2 = 400 Ω.
Which of the following frequencies is
associated with the 565 frequency-shift keyed
decoder?
Both 1070 Hz and 1270 Hz (Ans.)

Which of the following improvements is (are)


a result of the negative feedback in a circuit?
A. Higher input impedance
ADC (Ans.) B. Better stabilized voltage gain
C. Improved frequency response 4.75 (Ans.)
Which application best describes this 555 D. All of the above (Ans.)
timer circuit? Referring to this figure, calculate the voltage
Which of the following improvements is (are) gain with feedback Avf.
a result of the negative feedback in a circuit?
A. Lower output impedance
B. Reduced noise
C. More linear operation
D. All of the above (Ans.)

Which of the following is (are) feedback?


A. Voltage-series
B. Voltage-shunt
C. Current-series
D. All of the above (Ans.)
Astable multivibrator (Ans.) –4.17 (Ans.)
9
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
Referring to this figure, calculate the voltage In the IC phase-shift oscillator, what should Which of the following oscillators is (are)
gain without feedback for the following circuit the ratio of feedback resistor Rf to R1 be? tuned oscillators?
values: RD = 4 kΩ, RS = 1 kΩ, RF = 15 kΩ, Greater than –29 (Ans.) A. Colpitts
and gm = 5000 mS. B. Hartley
This circuit is a _____ oscillator. C. Crystal
D. All of the above (Ans.)

This circuit is a _____ oscillator.

–20.0 (Ans.)

Referring to this figure, calculate the voltage phase-shift (Ans.)


gain with the feedback for the following circuit
values: RD = 4 kΩ, RS = 1 kΩ, RF = 15 kΩ, Colpitts (Ans.)
and gm = 5000 mS. For a phase-shift oscillator, the gain of the
amplifier stage must be greater than _____. What is the typical value of quality factor for
29 (Ans.) crystal oscillators?
20,000 (Ans.)
In the Wien bridge oscillator, which of the
following is (are) frequency-determining
components? In which of the following applications is a
R1, R2, C1, and C2 (Ans.) pulsating dc voltage suitable?
Battery charger (Ans.)
Calculate the resonant frequency of this
oscillator. Calculate the ripple of a filter output having a
20-V dc component and a 1.7 Vr(rms) ac
component.
8.5% (Ans.)
–8.57 (Ans.)
Calculate the voltage regulation of a power
Which of the following is (are) the supply having VNL = 50 V and VFL = 48 V.
determining factor(s) of the stability of a 4.17% (Ans.)
feedback amplifier?
Both A and the phase shift between input and Across which of the following components of
output signals (Ans.) a power supply does the average (dc) voltage
1560.34 Hz (Ans.) exist?
At what phase shift is the magnitude of βA at Capacitor filter (Ans.)
its maximum in the Nyquist plot? Calculate the resonant frequency of this Wien
180º (Ans.) bridge oscillator if R1 = 25 kΩ, R2 = 40 kΩ, C1 Calculate the ripple voltage of a full-wave
= 0.001 µF, and C2 = 0.002 µF. rectifier with a 75-µF filter capacitor
At what phase shift is the magnitude of βA at connected to a load drawing 40 mA.
its minimum in the Nyquist plot? 1.28 V (Ans.)
0º (Ans.)
What is the ratio of the period of the output
Which of the following is required for voltage to the period of the input voltage in a
oscillation? full-wave rectifier?
Both βA > 1 and the phase shift around the 0.5 (Ans.)
feedback network must be 180º. (Ans.)
3558.8 Hz (Ans.) A _____ -wave rectified signal has less ripple
Only the condition βA = _____ must be than a _____ -wave rectified signal and is thus
satisfied for self-sustained oscillations to Calculate the value of C1 = C2 for the Wien better to apply to a filter.
result. bridge oscillator to operate at a frequency of full, half (Ans.)
1 (Ans.) 20 kHz. Assume R1 = R2 = 50 kΩ and R3 =
3R4 = 600Ω? If the value of full-load voltage is the same as
Given gm = 5000 µS, rd = 40 kΩ, R = 10 kΩ, the no-level voltage, the voltage regulation
and A = 35. Determine the value of C and RD calculated is _____ %, which is the best
for oscillator operation at 1 kHz. expected.
0 (Ans.)

In which period is the capacitor filter charged


in a full-wave rectifier?
The time during which the diode(s) is (are)
conducting (Ans.)
159 pF (Ans.)
In which period is the capacitor filter
This circuit is a _____ oscillator. discharged through the load in a full-wave
rectifier?
The time during which the diodes are not
conducting (Ans.)

If a peak rectified voltage for the full-wave


filter circuit is 40 V, calculate the filter dc
voltage if C = 75 µF and load current is 40
8.48 kΩ (Ans.) mA.
Wien bridge (Ans.) 37.78 V (Ans.)

10
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
Calculate the ripple of a capacitor filter for a Hundreds of milliamperes to tens of amperes What is the range of the varying capacitor CT
peak rectified voltage of 40 V, a capacitor (Ans.) in varactor diodes?
value C = 75 µF, and a load current of 40 mA. 2 pF to 100 µF (Ans.)
3.39% (Ans.) For what range of fixed regulated voltages do
the series 78xx regulators provide regulation? Which of the following areas is (are)
What is the ratio of the peak ripple voltage –5 V to +24 V (Ans.) applications of varactor diodes?
level to its rms voltage level? A. FM modulators
3 (Ans.) What is the typical dropout voltage for the B. Automatic-frequency control devices
7812 fixed positive voltage regulator? C. Adjustable bandpass filters
4 mV (Ans.) D. All of the above (Ans.)
What is the purpose of an additional RC filter
section in a power supply circuit?
How many diodes conduct in the full-wave The tuning diode is a _____-dependent,
Decrease the ac voltage component (Ans.)
bridge rectifier while the capacitor is being variable _____.
charged? voltage, capacitor (Ans.)
Calculate the dc voltage across a 2-kΩ load for
2 (Ans.)
an RC filter section (R = 50Ω, C = 20 µF). The
This is an equivalent circuit for the _____
dc voltage across the initial filter capacitor is
What is the range of the voltage level of the diode.
Vdc = 50 V.
LM317 adjusted voltage regulator?
48.78 V (Ans.)
1.2 V to 37 V (Ans.)
For a full-wave rectifier with ac ripple at 120
What are the typical values of Vref and Iadj for
Hz, the impedance of a capacitor can be
the LM317 adjustable voltage regulator?
calculated using XC = _____.
1.25 V, 100 mA (Ans.)
1.3 ÷ C (Ans.)
Varicap (Ans.)
The 7812 regulator IC provides _____.
In a simple series regulator circuit, which of
12 V (Ans.) The varicap diode has a transition capacitance
the following components is the controlling
element? sensitive to the applied reverse-bias potential
The 7912 regulator IC provides ____. that is a maximum at zero volts and decreases
Transistor Q1 (Ans.)
–12 V (Ans.) _____ with increasing reverse-bias potentials.
In this improved series regulator circuit, which exponentially (Ans.)
The 7905 regulator IC provides ____.
of the following components is the sampling
–5 V (Ans.) The majority of power diodes are constructed
circuit?
using _____.
The 7805 regulator IC provides ____. silicon (Ans.)
5 V (Ans.)
Which of the following diodes has a negative-
Which of the following is (are) diodes? resistance region?
A. Schottky Tunnel (Ans.)
B. Varactor
Resistors R1 and R2 (Ans.) C. Tunnel Which of the following semiconductor
D. All of the above (Ans.) materials is (are) used in the manufacturing of
In this op-amp series regulator circuit, which tunnel diodes?
of the following components is the comparator Which of the following metals is (are) used in Both germanium and gallium (Ans.)
circuit? the fabrication of Schottky diodes?
A. Molybdenum What is the ratio IP / IV for gallium arsenide?
B. Platinum 20:1 (Ans.)
C. Tungsten
D. All of the above (Ans.) What is the limit of peak current IP in tunnel
diodes?
What are the typical ranges of reverse-bias A few microamperes to several hundred
current levels amperes (Ans.)
Microamperes, milliamperes (Ans.)
Op-amp (Ans.) What is the maximum peak voltage for tunnel
What is the voltage drop across Schottky diodes?
What regulated output voltage is provided for diodes? 600 mV (Ans.)
the following circuit elements: R1 = 15 kΩ, R2 0 V to 0.2 V (Ans.)
= 35 kΩ, and VZ = 11.2 V? In which region is the operating point stable in
What metal(s) is(are) used in the construction tunnel diodes?
of Schottky diodes? Positive-resistance (Ans.)
A. Molybdenum
B. Platinum Which of the following diodes is limited to the
C. Tungsten reverse-bias region in its region of operation?
D. Any of the above (Ans.) Photodiode (Ans.)

For a 50-A unit, the PIV of the Schottky is What is the response time of cadmium sulfide
17 V (Ans.) about _____ compared to 150 V for the p-n (CdS) in photoconductive cells?
junction variety. 100 ms (Ans.)
Which component(s) set(s) the voltage across 50 (Ans.)
the load in a basic transistor shunt regulator? Which of the following areas is (are) an
Both the Zener diode and the transistor base- Schottky diodes are very effective at application of infrared-emitting diodes?
emitter voltage (Ans.) frequencies approaching _____. A. Intrusion alarms
20 GHz (Ans.) B. Shaft encoders
In an improved shunt regulator, which of the C. Paper-tape readers
following components sets the reference This is an equivalent circuit for the _____ D. All of the above (Ans.)
voltage? diode.
Zener diode (Ans.) What is the maximum temperature limit for
liquid-crystal displays (LCDs)?
For what range of load current can voltage 60ºC (Ans.)
regulators be selected for operation?
Schottky (Ans.)

11
Excel Review Center ECE Refresher/Coaching Course Elec TH 1
What is the response time of light-emitting Which of the transistors of an SCR are 3 A (Ans.)
diodes (LEDs)? conducting when the SCR is fired and is in the
Less than 100 ns (Ans.) conduction mode? How many terminals does a Shockley diode
Both npn and pnp (Ans.) have?
What is the response time of LCDs? 4 (Ans.)
100 ms to 300 ms (Ans.) What is the range of the turn-on times in high-
power SCR devices? This symbol is an example of a(n) _____.
What is the power density received from the 10 µs to 25 µs (Ans.)
sun at sea level?
100 mW/cm2 (Ans.) What is the typical range of turn-off times for
SCRs?
Which of the following semiconductor 5 µs to 30 µs (Ans.) Diac (Ans.)
materials is (are) used for manufacturing solar
cells? This symbol is an example of a(n) _____. Which of the following devices does not have
A. Gallium arsenide a cathode terminal?
B. Indium arsenide Triac (Ans.)
C. Cadmium sulfide
D. All of the above (Ans.) Which of the following devices has a negative-
SCR (Ans.)
resistance region in its characteristics curve?
What type of temperature coefficient do Unijunction transistor (Ans.)
Which of the following parameters are usually
thermistors have?
provided by the manufacturer on the
Either positive or negative (Ans.) What is the range of the variable resistor in the
specification sheet for SCRs?
equivalent circuit of a unijunction transistor?
A. Turn-on time (ton )
Which of the following materials is (are) used 50 Ω to 5 kΩ (Ans.)
in the manufacturing of thermistors? B. Turn-off time (toff )
A. Ge C. Junction and case temperatures (tj and tc ) This is an example of a high-isolation _____
B. Si D. All of the above (Ans.) gate.
C. A mixture of oxides of cobalt, nickel,
strontium, or manganese How many terminals does a silicon-controlled
D. All of the above (Ans.) switch (SCS) device have?
4 (Ans.)
What is the resistance of thermistors at room
temperature (20ºC)? What is the typical value of the triggering
5 kΩ (Ans.) anode gate for SCS devices?
1.5 mA (Ans.)
What is the resistance of thermistors at boiling
temperature (100ºC)? Which of the following is (are) the advantages AND (Ans.)
100 Ω (Ans.) of the SCS over a corresponding SCR?
A. Reduced turn-off time The ISO-LIT Q1 16-pin Litronix opto-isolator
What is the typical level of change in B. Increased control and triggering sensitivity DIP contains _____ opto-isolators.
resistance per degree change in temperature? C. More predictable firing situation 4 (Ans.)
3% to 5% (Ans.) D. All of the above (Ans.)
How many terminals does a programmable
How many layers of semiconductor materials Which of the following areas is (are) unijunction transistor (PUT) have?
does a silicon-controlled rectifier (SCR) have? applications of an SCS? 3 (Ans.)
4 (Ans.) A. Counters
B. Pulse generators Determine RB1 for a silicon PUT if it is
Which of the following devices has (have) four C. Voltage sensors determined that h = 0.84, VP = 11.2 V, and RB
layers of semiconductor materials? D. All of the above (Ans.) = 5 kΩ.
A. Silicon-controlled switch (SCS) 26.25 kΩ (Ans.)
B. Gate turn-off switch (GTO) This symbol is an example of a(n)_____.
C. Light-activated silicon-controlled rectifier
(LASCR)
D. All of the above (Ans.) END

A thyristor is a _____-layer semiconductor SCS (Ans.)


material device.
4 (Ans.) For an SCS, a _____ pulse at the anode gate
turns the device on, while a _____ pulse will
Which of the following devices is turn it off.
unquestionably of the greatest interest today? negative, positive (Ans.)
SCR (Ans.)
Which of the following devices has the
What is the frequency range of application of smallest turn-off time?
SCRs? LASCR (Ans.)
About 50 kHz (Ans.)
Which of the following devices has nearly the
Which one of the SCR terminals fires the same turn-on time as turn-off time?
SCR? GTO (Ans.)
Gate (Ans.)
This symbol is an example of a(n) _____.
What is the typical value of the reverse
resistance of SCRs?
100 kΩ or more (Ans.)

Which of the following transistors is an SCR


composed of? GTO (Ans.)
npn, pnp (Ans.)
What is the maximum current (rms) rating for
commercially available LASCRs today?

12

You might also like