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IR2101 Datasheet PDF
IR2101 Datasheet PDF
IR2101 Datasheet PDF
IR2101
HIGH AND LOW SIDE DRIVER
Features Product Summary
n Floating channel designed for bootstrap operation
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage
dV/dt immune
IO+/- 100 mA / 210 mA
n Gate drive supply range from 10 to 20V
VOUT 10 - 20V
n Undervoltage lockout
n 5V Schmitt-triggered input logic ton/off (typ.) 130 & 90 ns
n Matched propagation delay for both channels
n Outputs in phase with inputs Delay Matching 30 ns
Description Packages
The IR2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configura-
tion which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC VB
HIN HIN HO
LIN LIN VS TO
LOAD
COM LO
IR2101
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter Value
Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625
VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
V
VCC Low Side and Logic Fixed Supply Voltage -0.3 25
VLO Low Side Output Voltage -0.3 VCC + 0.3
VIN Logic Input Voltage (HIN & LIN) -0.3 VCC + 0.3
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
PD Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
W
(8 Lead SOIC) — 0.625
RθJA Thermal Resistance, Junction to Ambient (8 Lead DIP) — 125
°C/W
(8 Lead SOIC) — 200
TJ Junction Temperature — 150
TS Storage Temperature -55 150 °C
TL Lead Temperature (Soldering, 10 seconds) — 300
Parameter Value
Symbol Definition Min. Max. Units
VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20
VS High Side Floating Supply Offset Voltage Note 1 600
VHO High Side Floating Output Voltage VS VB
V
VCC Low Side and Logic Fixed Supply Voltage 10 20
VLO Low Side Output Voltage 0 VCC
VIN Logic Input Voltage (HIN & LIN) 0 VCC
TA Ambient Temperature -40 125 °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
IR2101
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
ton Turn-On Propagation Delay — 130 200 VS = 0V
toff Turn-Off Propagation Delay — 90 200 VS = 600V
tr Turn-On Rise Time — 80 120 ns
tf Turn-Off Fall Time — 40 70
MT Delay Matching, HS & LS Turn-On/Off — 30 —
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
VIH Logic “1” Input Voltage 2.7 — — VCC = 10V to 20V
V
VIL Logic “0” Input Voltage — — 0.8 VCC = 10V to 20V
VOH High Level Output Voltage, VBIAS - VO — — 100 IO = 0A
mV
VOL Low Level OutputVoltage, VO — — 100 IO = 0A
I LK Offset Supply Leakage Current — — 50 VB = VS = 600V
I QBS Quiescent VBS Supply Current — 20 50 VIN = 0V or 5V
IQCC QuiescentVCC Supply Current — 140 240 µA VIN = 0V or 5V
IIN+ Logic “1” Input Bias Current — 20 40 VIN = 5V
IIN- Logic “0” Input Bias Current — — 1.0 VIN = 0V
VCCUV+ VCC Supply Undervoltage Positive Going 8.8 9.3 9.8
Threshold
V
VCCUV- VCC Supply Undervoltage Negative Going 7.5 8.2 8.6
Threshold
I O+ Output High Short Circuit Pulsed Current 100 125 — VO = 0V,VIN = 5V
PW ≤ 10 µs
mA
I O- Output Low Short Circuit Pulsed Current 210 250 — VO = 15V, VIN = 0V
PW ≤ 10 µs
IR2101
Functional Block Diagram
VB
HV
LEVEL PULSE R HO
SHIFT
FILTER S
HIN
PULSE VS
GEN
UV
DETECT VCC
LIN
LO
COM
Lead Definitions
Lead
Symbol Description
HIN Logic input for high side gate driver output (HO), in phase
LIN Logic input for low side gate driver output (LO), in phase
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
VCC Low side and logic fixed supply
LO Low side gate drive output
COM Low side return
Lead Assignments
IR2101
Device Information
Process & Design Rule HVDCMOS 4.0 µm
Transistor Count 168
Die Size 67 X 91 X 26 (mil)
Die Outline
IR2101
90% 90%
HO HO
LO LO 10% 10%
LO HO
10%
MT MT
90%
LO HO