MCC 255

MCD 255

Thyristor Modules ITRMS = 2x 450 A

ITAVM = 2x 250 A
Thyristor/Diode Modules VRRM = 1200-1800 V

3
VRSM VRRM Type 2 7
6
VDSM VDRM 5
4
V V
1300 1200 MCC 255-12io1 MCD 255-12io1 1
1500 1400 MCC 255-14io1 MCD 255-14io1
1700 1600 MCC 255-16io1 MCD 255-16io1
1900 1800 MCC 255-18io1 MCD 255-18io1

E72873

3 6 7 1 5 4 2
Symbol Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 450 A
ITAVM, IFAVM TC = 85°C; 180° sine 250 A
MCC
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 9000 A
VR = 0 t = 8.3 ms (60 Hz) 9600 A
TVJ = TVJM; t = 10 ms (50 Hz) 7800 A 3 1 5 4 2
VR = 0 t = 8.3 ms (60 Hz) 8600 A
I2t TVJ = 45°C; t = 10 ms (50 Hz) 405 000 A2s MCD
VR = 0 t = 8.3 ms (60 Hz) 382 000 A2s
TVJ = TVJM; t = 10 ms (50 Hz) 304 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 307 000 A2s
(di/dt)cr TVJ = TVJM; repetitive, IT = 860 A 100 A/µs Features
f = 50 Hz; tp = 200 µs;
• International standard package
VD = 2/3 VDRM; • Direct Copper Bonded Al2O3-ceramic
IG = 1 A; non repetitive, IT = ITAVM 500 A/µs with copper base plate
diG /dt = 1 A/µs • Planar passivated chips
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM; 1000 V/µs • Isolation voltage 3600 V~
RGK = ∞; method 1 (linear voltage rise) • UL registered, E 72873
• Keyed gate/cathode twin pins
PGM TVJ = TVJM; tp = 30 µs 120 W
IT = IT(AV)M; tp = 500 µs 60 W
Applications
PGAV 20 W
• Motor control, softstarter
VRGM 10 V
• Power converter
TVJ -40...+130 °C • Heat and temperature control for
TVJM 130 °C industrial furnaces and chemical
Tstg -40...+125 °C processes
VISOL 50/60 Hz, RMS t = 1 min 3000 V~ • Lighting control
IISOL < 1 mA t=1s 3600 V~ • Solid state switches
Md Mounting torque (M6) 4.5 - 7 Nm Advantages
Terminal connection torque (M8) 11 - 13 Nm
• Simple mounting
Weight Typical including screws 750 g • Improved temperature and power
Data according to IEC 60747 and refer to a single diode unless otherwise stated. cycling
• Reduced protection circuits

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 MCC 255
MCD 255

Symbol Conditions Characteristic Values 10

1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
typ. max. 3: IGT, TVJ = -40°C

IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM 40 mA

6
VT, VF IT; IF = 600 A TVJ = 25°C 1.36 V 4
5
3
VT0 For power-loss calculations only 0.8 V VG 2
1
rt TVJ = TVJM 0.68 mW 1
[V]
VGT VD = 6 V TVJ = 25°C 2 V
TVJ = -40°C 3 V
IGT VD = 6 V TVJ = 25°C 150 mA 4: PGM = 20 W

TVJ = -40°C 220 mA IGD, TVJ = 130°C

5: PGM = 60 W
6: PGM = 120 W
VGD VD = 2/3 VDRM; TVJ = TVJM 0.25 V 0.1
IGD 10 mA 10-3 10-2 10-1 100 101 102
IG [A]
IL tp = 30 µs; VD = 6 V TVJ = 25°C 200 mA
IG = 0.45 A; diG /dt = 0.45 A/µs Fig. 3 Surge overload current
ITSM/FSM: Crest value, t: duration
IH VD = 6 V; RGK = ∞; TVJ = 25°C 150 mA
tgd VD = ½VDRM TVJ = 25°C 2 µs 100
IG = 1 A; diG /dt = 1 A/µs TVJ = 25°C

tq VD = 2/3 VDRM TVJ = TVJM 200 µs

dv/dt = 50 V/µs; -di/dt = 10 A/µs
typ. limit
IT = 300 A; VR = 100 V; tp = 200 µs
QS IT = 300 A; -di/dt = 50 A/µs TVJ = TVJM 760 µC tgd
IRM 275 A 10
[μs]
RthJC per thyristor; DC current 0.139 K/W
per module 0.07 K/W
RthJK per thyristor; DC current 0.179 K/W
per module 0.09 K/W
dS Creeping distance on surface 12.7 mm 1
dA Creepage distance in air 9.6 mm 0.01
10 0.1
100 1
1000 10
10000
a Maximum allowable acceleration 50 m/s2 IG [A]
Fig. 2 Gate trigger delay time

IXYS reserves the right to change limits, test conditions and dimensions. 20130813c

© 2013 IXYS All rights reserved 2-5

 MCC 255
MCD 255

Dimensions in mm (1 mm = 0.0394“)

M8 x 20 SW 13

2.8 x 0.8
2
-1,4
52 +0
49

45
43
-1,9
32 +0
10

20 22.5 35 28.5

45 67
1

50
38
18

5
2 3

6.2
80
92
115

Optional accessories for modules

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)

IXYS reserves the right to change limits, test conditions and dimensions. 20130813c

© 2013 IXYS All rights reserved 3-5

 MCC 255
MCD 255

10000 106 400

50 Hz DC
80 % VRRM 180° sin
8000 TVJ = 45°C 120°
TVJ = 130°C 300 60°
TVJ = 45°C 30°

6000 I2dt I
TVJ = 130°C F(T)AVM
IT(F)SM 105 200
4000 2
[A s] [A]
[A]
100
2000

0 104 0
0.001 0.01 0.1 1 1 10 0 25 50 75 100 125 150
t [s] t [ms] TC [°C]
2
Fig. 3 Surge overload current Fig. 4 I dt versus time Fig. 4a Max. forward current
IT(F)SM:Crest value, t: duration at case temperature

RthKA K/W
0.1
0.2
0.3
Ptot 0.4
0.6
0.8
1.0
[W] DC
180° sin
120°
60°
30°

IFAVM/TAVM [A] TA [°C]

Fig. 5 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)

RthKA K/W
0.03
0.06
0.1
0.15
0.2
Ptot 0.3
0.4

[W] Circuit
B6
3xMCC255 or
3xMCD255

IDAVM [A] TA [°C]

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature

IXYS reserves the right to change limits, test conditions and dimensions. 20130813c

© 2013 IXYS All rights reserved 4-5

 MCC 255
MCD 255

2000
RthKA K/W
0.03
0.06
1500 0.1
0.15
Ptot 0.2
0.3
0.4
1000
[W]
Circuit
W3
500 3xMCC255 or
3xMCD255

0
0 100 200 300 400 500 0 25 50 75 100 125 150
IRMS [A] TA [°C]
Fig. 7 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature

0.25 RthJC for various conduct. angles d:

d RthJC (K/W)
DC 0.139
0.20
180° 0.148
120° 0.156
0.15 60° 0.176
ZthJC 30° 0.214
30°
0.10 60° Constants for ZthJC calculation:
120°
[K/W] 180° i Rthi (K/W) ti (s)
DC 1 0.0066 0.00054
0.05
2 0.0358 0.098
3 0.0831 0.54
0.00 4 0.0129 12
10-3 10-2 10-1 100 101 102
t [s]
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)

RthJK for various conduct. angles d:

0.30 d RthJK (K/W)
DC 0.179
0.25 180° 0.188
120° 0.196
0.20 60° 0.216
ZthJK 30° 0.254
0.15
Constants for ZthJK calculation:
[K/W] 30°
i Rthi (K/W) ti (s)
60°
0.10
120°
1 0.0066 0.00054
180°
DC 2 0.0358 0.0980
0.05
3 0.0831 0.540
4 0.0129 1200
0.00
10-3 10-2 10-1 100 101 102 5 0.0400 12
t [s]
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode)
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c

© 2013 IXYS All rights reserved 5-5

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MCD255-12io1 MCD255-14io1 MCD255-16io1 MCD255-18io1 MCC255-12io1 MCC255-14io1 MCC255-16io1
MCC255-18io1