FGL40N120AND 1200V NPT IGBT

February 2008

tm
FGL40N120AND
1200V NPT IGBT
Features Description
• High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
offers an solution for application such as induction heating (IH),
• High input impedance motor control, general purpose inverters and uninterruptible
power supplies (UPS).
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)

Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.

TO-264
G C E E

Absolute Maximum Ratings

Symbol Parameter FGL40N120AND Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±25 V
Collector Current @TC = 25°C 64 A
IC
Collector Current @TC = 100°C 40 A
ICM(1) Pulsed Collector Current 160 A
IF Diode Continuous Forward Current @TC = 100°C 40 A
IFM Diode Maximum Forward Current 240 A
Maximum Power Dissipation @TC = 25°C 500 W
PD
Maximum Power Dissipation @TC = 100°C 200 W
Short Circuit Withstand Time,
SCWT 10 µs
VCE = 600V, VGE = 15V, TC = 125°C
TJ Operating Junction Temperature -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
TL 300 °C
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGL40N120AND FGL40N120AND TO-264 - - 25

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 3.5 5.5 7.5 V
IC = 40A, VGE = 15V -- 2.6 3.2 V
Collector to Emitter IC = 40A, VGE = 15V,
VCE(sat) -- 2.9 -- V
Saturation Voltage TC = 125°C
IC = 64A, VGE = 15V -- 3.15 -- V

Dynamic Characteristics
Cies Input Capacitance -- 3200 -- pF
VCE = 30V, VGE = 0V
Coes Output Capacitance -- 370 -- pF
f = 1MHz
cres Reverse Transfer Capacitance -- 125 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 15 -- ns
tr Rise Time -- 20 -- ns
td(off) Turn-Off Delay Time -- 110 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5Ω, VGE = 15V, -- 40 80 ns
Inductive Load, TC = 25°C
Eon Turn-On Switching Loss -- 2.3 3.45 mJ
Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ
Ets Total Switching Loss -- 3.4 5.1 mJ
td(on) Turn-On Delay Time -- 20 -- ns
tr Rise Time -- 25 -- ns
td(off) Turn-Off Delay Time -- 120 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5Ω, VGE = 15V, -- 45 -- ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 2.5 -- mJ
Eoff Turn-Off Switching Loss -- 1.8 -- mJ
Ets Total Switching Loss -- 4.3 -- mJ
Qg Total Gate charge -- 220 330 nC
VCE = 600V, IC = 40A,
Qge Gate-Emitter Charge -- 25 38 nC
VGE = 15V
Qgc Gate-Collector Charge -- 130 195 nC

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

IF = 40A TC = 25°C -- 3.2 4.0
VFM Diode Forward Voltage V
TC = 125°C -- 2.7 --
TC = 25°C -- 75 112
trr Diode Reverse Recovery Time nS
TC = 125°C -- 130 --

Diode Peak Reverse Recovery IF = 40A, TC = 25°C -- 8 12

Irr A
Current di/dt = 200A/µs TC = 125°C -- 13 --
TC = 25°C -- 300 450
Qrr Diode Reverse Recovery Charge nC
TC = 125°C -- 845 --

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
300 150
TC = 25°C
20V Common Emitter
17V VGE = 15V
250 15V
TC = 25°C
120
TC = 125°C
Collector Current, IC [A]

Collector Current, IC [A]

200 12V
90

150

60
100 VGE = 10V

30
50

0 0
0 2 4 6 8 10 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5 80
Common Emitter VCC = 600V
VGE = 15V Load Current : peak of square wave
70
Collector-Emitter Voltage, VCE [V]

4 60
80A
Load Current [A]

50

3 40
40A
30

2 20
IC = 20A
Duty cycle : 50%
10
TC = 100°C
Power Dissipation = 100W
1 0
25 50 75 100 125 0.1 1 10 100 1000

Case Temperature, TC [°C] Frequency [kHz]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25°C TC = 125°C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 80A
4 4 40A
40A

IC = 20A IC = 20A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance
6000
Common Emitter
VGE = 0V, f = 1MHz
5000 TC = 25°C
100
Ciss

Switching Time [ns]

4000
Capacitance [pF]

tr

3000

2000 Common Emitter

td(on)
Coss VCC = 600V, VGE = ±15V
IC = 40A
1000 Crss TC = 25°C
TC = 125°C
0 10
1 10 0 10 20 30 40 50 60 70

Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ]

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance

Common Emitter Common Emitter

VCC = 600V, VGE = ±15V, IC = 40A VCC = 600V, VGE = ±15V
1000
TC = 25°C IC = 40A
td(off)
TC = 125°C TC = 25°C
10
TC = 125°C
Switching Loss [mJ]
Switching Time [ns]

Eon

100

Eoff
tf

10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

Gate Resistance, RG [Ω] Gate Resistance, RG [Ω]

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current

Common Emitter Common Emitter

VGE = ±15V, RG = 5Ω VGE = ±15V, RG = 5Ω

100 TC = 25°C tr TC = 25°C

TC = 125°C TC = 125°C
td(off)
Switching Time [ns]
Switching Time [ns]

100

tf

td(on)

10

20 30 40 50 60 70 80 20 30 40 50 60 70 80

Collector Current, IC [A] Collector Current, IC [A]

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
16
Common Emitter Common Emitter
VGE = ±15V, RG = 5Ω RL = 15Ω
14
TC = 25°C Vcc = 200V
10 Eon TC = 25°C
600V

Gate-Emitter Voltage, VGE [V]

TC = 125°C 12
Switching Loss [mJ]

10
400V

Eoff 8

1
6

0.1 0
20 30 40 50 60 70 80 0 50 100 150 200 250

Collector Current, IC [A] Gate Charge, Qg [nC]

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

Ic MAX (Pulsed)
100 50µs
Ic MAX (Continuous)
100µs 100
Collector Current, Ic [A]

Collector Current, IC [A]

10 1ms

DC Operation

1
10

Single Nonrepetitive
0.1 o
Pulse Tc = 25 C
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature VGE = 15V, TC = 125 C
0.01 1
0.1 1 10 100 1000 1 10 100 1000

Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

10

100
di/dt = 200A/µs
Reverse Recovery Currnet , Irr [A]

8
o
TJ = 125 C
Forward Current , IF [A]

6
10
o
TJ = 25 C
4

di/dt = 100A/µs
1

2
o
TC = 125 C
o
TC = 25 C
0.1 0
0 1 2 3 4 5 6 0 10 20 30 40 50 60 70

Forward Voltage , VF [V] Forward Current , IF [A]

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics (Continued)

Figure 19. Stored Charge Figure 20. Reverse Recovery Time

100 400

Stored Recovery Charge , Qrr [nC]

Reverse Recovery Time , trr [ns]

90
300 di/dt = 200A/µs
di/dt = 200A/µs
80

200
70 di/dt = 100A/µs

di/dt = 100A/µs
60 100

50
0 10 20 30 40 50 60 70 0
Forward Current , IF [A] 0 10 20 30 40 50 60 70

Forward Current , IF [A]

Figure 21. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.1 0.5

0.2

0.1

0.01 0.05 Pdm

Pdm

t1
t1
0.02
t2
t2
0.01
single pulse Duty
Dutyfactor
factorDD==t1
t1//t2
t2
Peak
PeakTj Pdm××Zthjc
Tj==Pdm Zthjc++TTCC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10

Rectangular Pulse Duration [sec]

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FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
Mechanical Dimensions

TO-264
20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2.0

20.00 ±0.20
0)

0 ±0

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

8 www.fairchildsemi.com
FGL40N120AND Rev. A2
 FGL40N120AND 1200V NPT IGBT
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This datasheet contains the design specifications for product development.
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FGL40N120AND Rev. A2