RGT30NS65D

650V 15A Field Stop Trench IGBT Data Sheet

lOutline
VCES LPDS / TO-262
650V
(2)
IC(100°C) 15A
VCE(sat) (Typ.) 1.65V (1)
(3)
PD 133W (1)(2)(3)

lFeatures lInner Circuit

1) Low Collector - Emitter Saturation Voltage
(2)
2) Low Switching Loss (1) Gate
*1 (2) Collector
3) Short Circuit Withstand Time 5μs (1) (3) Emitter

4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD

(RFN - Series) (3)

5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications

lApplications Packaging Taping / Tube
General Inverter Reel Size (mm) 330 / -
UPS Tape Width (mm) 24 / -
Type
Power Conditioner Basic Ordering Unit (pcs) 1,000 / 1,000
Welder Packing code TL / C9
Marking RGT30NS65D

lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit
Collector - Emitter Voltage VCES 650 V
Gate - Emitter Voltage VGES 30 V
TC = 25°C IC 30 A
Collector Current
TC = 100°C IC 15 A
Pulsed Collector Current ICP*1 45 A
TC = 25°C IF 26 A
Diode Forward Current
TC = 100°C IF 15 A
Diode Pulsed Forward Current IFP*1 45 A
TC = 25°C PD 133 W
Power Dissipation
TC = 100°C PD 66 W
Operating Junction Temperature Tj -40 to +175 °C
Storage Temperature Tstg -55 to +175 °C
*1 Pulse width limited by Tjmax.

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RGT30NS65D Data Sheet

lThermal Resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.12 °C/W

Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.86 °C/W

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Collector - Emitter Breakdown

BVCES IC = 10μA, VGE = 0V 650 - - V
Voltage

Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA

Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA

Gate - Emitter Threshold

VGE(th) VCE = 5V, IC = 10.0mA 5.0 6.0 7.0 V
Voltage

IC = 15A, VGE = 15V

Collector - Emitter Saturation
VCE(sat) Tj = 25°C - 1.65 2.1 V
Voltage
Tj = 175°C - 2.15 -

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RGT30NS65D Data Sheet

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Input Capacitance Cies VCE = 30V - 780 -

Output Capacitance Coes VGE = 0V - 35 - pF

Reverse Transfer Capacitance Cres f = 1MHz - 13 -

Total Gate Charge Qg VCE = 300V - 32 -

Gate - Emitter Charge Qge IC = 15A - 8 - nC

Gate - Collector Charge Qgc VGE = 15V - 11 -

Turn - on Delay Time td(on) IC = 15A, VCC = 400V - 18 -

Rise Time tr VGE = 15V, RG = 10Ω - 20 -

ns
Turn - off Delay Time td(off) Tj = 25°C - 64 -

Fall Time tf Inductive Load - 75 -

Turn - on Delay Time td(on) IC = 15A, VCC = 400V - 18 -

Rise Time tr VGE = 15V, RG = 10Ω - 22 -

ns
Turn - off Delay Time td(off) Tj = 175°C - 74 -

Fall Time tf Inductive Load - 130 -

IC = 45A, VCC = 520V

Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE -
RG = 50Ω, Tj = 175°C

VCC ≦ 360V

Short Circuit Withstand Time tsc VGE = 15V 5 - - μs

Tj = 25°C

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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 2015.11 - Rev.C
RGT30NS65D Data Sheet

lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
IF = 15A

Diode Forward Voltage VF Tj = 25°C - 1.5 1.95 V

Tj = 175°C - 1.3 -

Diode Reverse Recovery Time trr - 55 - ns

IF = 15A

Diode Peak Reverse Recovery VCC = 400V

Irr - 6.0 - A
Current diF/dt = 200A/μs

Diode Reverse Recovery Tj = 25°C

Qrr - 0.19 - μC
Charge

Diode Reverse Recovery Time trr - 141 - ns

IF = 15A

Diode Peak Reverse Recovery VCC = 400V

Irr - 9.5 - A
Current diF/dt = 200A/μs

Diode Reverse Recovery Tj = 175°C

Qrr - 0.79 - μC
Charge

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© 2015 ROHM Co., Ltd. All rights reserved. 4/11 2015.11 - Rev.C
RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature

160 40

140
Power Dissipation : PD [W]

Collector Current : IC [A]

120 30

100

80 20

60

40 10
　 Tj≦175ºC
20
VGE≧15V
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Case Temperature : Tc [ºC] Case Temperature : Tc [ºC]

Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area

1000 60

50
100 10µs
Collector Current : IC [A]

Collector Current : IC [A]

40
10
30
100µs
1
20

0.1
TC= 25ºC 10
Tj≦175ºC
Single Pulse VGE=15V
0.01 0
1 10 100 1000 0 200 400 600 800

Collector To Emitter Voltage : VCE[V] Collector To Emitter Voltage : VCE[V]

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RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics

45 45
Tj= 25ºC Tj= 175ºC VGE= 20V
40 40
VGE= 20V
35 35

Collector Current : IC [A]

Collector Current : IC [A]

VGE= 12V VGE= 15V

30 VGE= 15V 30
VGE= 12V
25 VGE= 10V 25

20 20 VGE= 10V

15 15

10 10 VGE= 8V
VGE= 8V
5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector To Emitter Voltage : VCE[V] Collector To Emitter Voltage : VCE[V]

Fig.7 Typical Transfer Characteristics Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
30 4
VCE= 10V
Collector To Emitter Saturation Voltage

VGE= 15V
25 IC= 30A
Collector Current : IC [A]

3
20
: VCE(sat) [V]

IC= 15A
15 2

10
IC= 8A
1
5 Tj= 175ºC
Tj= 25ºC
0 0
0 2 4 6 8 10 12 25 50 75 100 125 150 175

Gate To Emitter Voltage : VGE [V] Junction Temperature : Tj [ºC]

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RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage vs. Gate To Emitter Voltage
20 20

Collector To Emitter Saturation Voltage

Collector To Emitter Saturation Voltage

Tj= 25ºC Tj= 175ºC

15 IC= 30A 15

: VCE(sat) [V]
: VCE(sat) [V]

IC= 30A
10 IC= 15A 10 IC= 15A

IC= 8A IC= 8A

5 5

0 0
5 10 15 20 5 10 15 20

Gate To Emitter Voltage : VGE [V] Gate To Emitter Voltage : VGE [V]

Fig.11 Typical Switching Time Fig.12 Typical Switching Time

vs. Collector Current vs. Gate Resistance
1000 1000
VCC=400V, VGE=15V VCC=400V, IC=15A
RG=10Ω, Tj=175ºC VGE=15V, Tj=175ºC
Inductive ｌoad Inductive ｌoad
Switching Time [ns]

Switching Time [ns]

tf
tf
100 100
td(off)
td(off)

tr
tr
td(on)
td(on)
10 10
0 10 20 30 40 0 10 20 30 40 50

Collector Current : IC [A] Gate Resistance : RG [Ω]

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RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses Fig.14 Typical Switching Energy Losses
vs. Collector Current vs. Gate Resistance
10 10

Switching Energy Losses [mJ]

Switching Energy Losses [mJ]

1 1
Eoff

Eoff

0.1 0.1 Eon

Eon

VCC=400V, VGE=15V VCC=400V, IC=15A

RG=10Ω, Tj=175ºC VGE=15V, Tj=175ºC
Inductive ｌoad Inductive ｌoad
0.01 0.01
0 10 20 30 40 0 10 20 30 40 50

Collector Current : IC [A] Gate Resistance : RG [Ω]

Fig.15 Typical Capacitance Fig.16 Typical Gate Charge

vs. Collector To Emitter Voltage
10000 15
Gate To Emitter Voltage : VGE [V]

Cies
1000
Capacitance [pF]

10

100
Coes
5
10
f=1MHz Cres VCC=300V
VGE=0V IC=15A
Tj=25ºC Tj=25ºC
1 0
0.01 0.1 1 10 100 0 10 20 30 40

Collector To Emitter Voltage : VCE[V] Gate Charge : Qg [nC]

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RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Voltage vs. Forward Current
45 400
VCC=400V
40 diF/dt=200A/µs

Reverse Recovery Time : trr [ns]

Inductive ｌoad
35
Forward Current : IF [A]

300
30

25
200
20 Tj= 175ºC

15
Tj= 175ºC 100
10 Tj= 25ºC
Tj= 25ºC
5

0 0
0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50

Forward Voltage : VF[V] Forward Current : IF [A]

Fig.19 Typical Diode Reverse Recovery Current Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current vs. Forward Current
20 2.5
VCC=400V
Reverse Recovery Charge : Qrr [µC]
Reverse Recovery Current : Irr [A]

diF/dt=200A/µs
2 Inductive ｌoad
15

1.5

10 Tj= 175ºC

1 Tj= 175ºC

5
VCC=400V 0.5
diF/dt=200A/µs Tj= 25ºC
Tj= 25ºC
Inductive ｌoad
0 0
0 10 20 30 40 50 0 10 20 30 40 50

Forward Current : IF [A] Forward Current : IF [A]

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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 2015.11 - Rev.C
RGT30NS65D Data Sheet

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

10

D= 0.5
Transient Thermal Impedance

0.2
0.1
1
: ZthJC [ºC/W]

PDM
0.1
0.01 Single Pulse
t1
0.02
0.05 t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC

0.01
0.0001 0.001 0.01 0.1 1

Pulse Width : t1[s]

Fig.22 Diode Transient Thermal Impedance

10
D= 0.5
0.2
Transient Thermal Impedance

0.1

1
: ZthJC [ºC/W]

Single Pulse PDM

0.1 0.01
0.05 0.02 t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC

0.01
0.0001 0.001 0.01 0.1 1

Pulse Width : t1[s]

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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 2015.11 - Rev.C
RGT30NS65D Data Sheet

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%
D.U.T.
VGE
D.U.T. 10%

VG
90%

IC
Fig.23 Inductive Load Circuit 10%

td(on) tr td(off) tf

ton toff
trr , Qrr
IF

VCE
diF/dt

VCE(sat)
Irr

Fig.25 Diode Reverce Recovery Waveform Fig.24 Inductive Load Waveform

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 Notice

Notes
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provided only to illustrate the standard usage and operations of the Products. The peripheral
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