BC546A/B/C - BC547A/B/C-BC548A/B/C

NPN SILICON AMPLIFIER TRANSISTOR

TO-92
Features A E

!• Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)
!•
B
Through Hole Package
!• 150 οC Junction Temperature
!• Epoxy meets UL 94 V-0 flammability rating
!• Moisure Sensitivity Level 1
!• Halogen free available upon request by adding suffix "-HF" C

Mechanical Data
•
! Case: TO-92, Molded Plastic
•
! Polarity:indicated as below
D

C
C B
B E
E
STRAIGHT LEAD BENT LEAD
G BULK PACK AMMO PACK

DIMENSIONS

INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095 .105 2.42 2.67 Straight Lead
G
.173 .220 4.40 5.60 Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.

Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Charateristic Symbol Value Unit

Collector-Emitter Voltage BC546 65
BC547 VCEO 45 V
BC548 30
Collector-Base Voltage BC546 80
BC547 VCBO 50 V
BC548 30
Emitter-Base Voltage VEBO 6.0 V
Collector Current(DC) IC 100 mA
625 mW
Power Dissipation@TA=25oC Pd
5.0 mW/oC
1.5 W
Power Dissipation@TC=25oC Pd
12 mW/oC
Thermal Resistance, Junction to 200 o
RqJA C/W
Ambient Air
Thermal Resistance, Junction to RqJC 83.3 o
C/W
Case
o
Operating & Storage Temperature Tj, TSTG -55~150 C

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V
(IC = 1.0 mA, IB = 0) BC547 45 — —
BC548 30 — —
Collector–Base Breakdown Voltage BC546 V(BR)CBO 80 — — V
(IC = 100 µAdc) BC547 50 — —
BC548 30 — —
Emitter–Base Breakdown Voltage BC546 V(BR)EBO 6.0 — — V
(IE = 10 mA, IC = 0) BC547 6.0 — —
BC548 6.0 — —

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 µA, VCE = 5.0 V) BC546A/547A/548A — 90 —
BC546B/547B/548B — 150 —
BC546C/547C/548C — 270 —

(IC = 2.0 mA, VCE = 5.0 V) BC546A/547A/548A 110 180 220

BC546B/547B/548B 200 290 450
BC546C/547C/548C 420 520 800

(IC = 100 mA, VCE = 5.0 V) BC546A/547A/548A — 120 —

BC546B/547B/548B — 180 —
BC546C/547C/548C — 300 —

Collector–Emitter Saturation Voltage VCE(sat) V

(IC = 100 mA, IB = 5.0 mA) — --- 0.3

Base–Emitter Saturation Voltage VBE(sat) — — 1.0 V

(IC = 100 mA, IB = 5.0 mA)
Base–Emitter On Voltage VBE(on) V
(IC = 2.0 mA, VCE = 5.0 V) 0.55 — 0.7
(IC = 10 mA, VCE = 5.0 V) — — 0.77

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 —
BC547 150 300 —
BC548 150 300 —
Output Capacitance Cobo — 1.7 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)

BC546A/547A/548A 125 220 260

BC546B/547B/548B 240 330 500
BC546C/547C/548C 450 600 900
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, BC546 — 2.0 10
f = 1.0 kHz, ∆f = 200 Hz) BC547 — 2.0 10
BC548 — 2.0 10

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 2.0 1.0
VCE = 10 V 0.9 TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN

1.5
TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
1.0 0.7

V, VOLTAGE (VOLTS)
0.8 0.6 VBE(on) @ VCE = 10 V

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C -55°C to +125°C

1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

BC547/BC548
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30

1.0 20
fă,

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

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 1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TA = 25°C
VCE = 5 V
TA = 25°C 0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5

0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

2.0 -1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C
1.6 -1.4
20 mA 50 mA 100 mA 200 mA
1.2 -1.8
θVB for VBE
IC = -55°C to 125°C
0.8 -2.2
10 mA

0.4 -2.6

0 -3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

BC546
40
T CURRENT-GAIN - BANDWIDTH PRODUCT

TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)

Cib
200

10
100

6.0 50

4.0 Cob
20
fă,

2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

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