Preliminary

KA5L0380R S P S

S P S
TO -22 0F -4L
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed frequency
oscillator, under voltage lock-out, leading edge blanking, optimized
gate turn-on/turn-off driver, thermal shutdown protection, over
voltage protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry.
Compared to discrete MOSFET and PWM controller or RCC
solution, a SPS can reduce total component count, design size,
weight and at the same time increase efficiency, productivity, and
system reliability. 1. GND 2. Drain 3. Vcc 4. FB
It has a basic platform well suited for cost-effective design in either a
flyback converter or a forward converter.

FEATURES ORDERING INFORMATION

• Precision fixed operating frequency (50kHz) Device Package Topr (°°C)

• Low start-up current (Typ. 100mA) KA5L0380R TO-220F-4L −25°C to +85°C

• Pulse by pulse current limiting

• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode

BLOCK DIAGRAM

REV. B

 1999 Fairchild Semiconductor Corporation

Preliminary
KA5L0380R S P S

ABSOLUTE MAXIMUM RATINGS

Characteristic Symbol Value Unit

Drain-source (GND) voltage (1) VDSS 800 V
Drain-Gate voltage (RGS=1MΩ) VDGR 800 V
Gate-source (GND) voltage VGS ±30 V
(2)
Drain current pulsed IDM 12 ADC
Single pulsed avalanche energy (3) EAS 95 mJ
Avalanche current (4)
IAS − A
Continuous drain current (TC=25°C) ID 3.0 ADC
Continuous drain current (TC=100°C) ID 2.1 ADC
Supply voltage VCC 30 V
Analog input voltage range VFB −0.3 to VSD V
Total power dissipation PD (wt H/S) 35 W
Derating 0.28 W/°C
Operating temperature TOPR −25 to +85 °C
Storage temperature TSTG −55 to +150 °C

NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
Preliminary
KA5L0380R S P S

ELECTRICAL CHARACTERISTICS (SFET part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 800 − − V
Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 250 µA
VDS=0.8Max., Rating, − − 1000 µA
VGS=0V, TC=125°C
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 4 5 Ω
Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 − S
Input capacitance Ciss VGS=0V, VDS=25V, − 779 − pF
f=1MHz
Output capacitance Coss − 75.6 −
Reverse transfer capacitance Crss − 24.9 −
Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A − 40 − nS
(MOSFET switching
Rise time tr − 95 −
time are essentially
Turn off delay time td(off) independent of − 150 −
operating temperature)
Fall time tf − 60 −
Total gate charge Qg VGS=10V, ID=1.0A, − − 34 nC
(gate-source+gate-drain) VDS=0.5BVDSS (MOSFET
switching time are
Gate-source charge Qgs − 7.2 −
essentially independent of
Gate-drain (Miller) charge Qgd operating temperature) − 12.1 −
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Preliminary
KA5L0380R S P S

ELECTRICAL CHARACTERISTICS (Control part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C
OSCILLATOR SECTION
Initial accuracy FOSC Ta=25°C 45 50 55 kHz
Frequency change with temperature (2)
∆F/∆T −25°C≤Ta≤+85°C − ±5 ±10 %
PWM SECTION
Maximum duty cycle Dmax − 74 77 80 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 1.89 2.15 2.41 A
UVLO SECTION
Start threshold voltage Vth(H) − 8.4 9 9.6 V
Minimum operating voltage Vth(L) After turn on 14 15 16 V
TOTAL STANDBY CURRENT SECTION
Start current IST VCC=14V − 0.1 0.17 mA
Operating supply current IOPR VCC<28 − 7 12 mA
(control part only)
SHUTDOWN SECTION
Shutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Thermal shutdown temperature (Tj) (1)
TSD − 140 160 − °C
Over voltage protection VOVP VCC>24V 25 27 29 V
NOTES:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Preliminary
KA5L0380R S P S

TYPICAL PERFORMANCE CHARACTERISTICS (SFET part)

Fig 1. Output Characteristics Fig. 2 Transfer Characteristics

101 101
VGS
Top : 15V
10V
8.0V
7.0V
6.0V
ID, Drain Current [A]

ID, Drain Current [A]

5.5V
5.0V
Bottom:4.5V
100 100
150 oC

@Notes: @Notes:
1. 300µ s Pulse Test 25 oC -25 oC
1. VDS = 30 V
2. TC = 25 oC 2. 300µ s Pulse Test

10-1 10-1
100 101 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Fig. 3 On-Resistance vs. Drain Current Fig. 4 Source-Drain Diode Forward Voltage

Fig3. On-Resistance vs. Drain Current

8

7 10
Vgs=10V
IDR, Reverse Drain Current [A]
Drain-Source On-Resistance

5
RDS(on) , [
]

Vgs=20V
4
1
3

2 25 oC
150 oC @Notes:
1. VGS = 0V
1 2. 300µ s Pulse Test
@Note : Tj=25

0 0.1
0 1 2 3 4 0.4 0.6 0.8 1.0
ID,Drain Current VSD, Source-Drain Voltage [V]

Fig.5 Capacitance vs. Drain-Source Voltage Fig. 6 Gate Charge vs. Gate-Source Voltage

1000

900 Ciss = Cgs + Cgd (Cds = shorted) 10

VDS=160V
Coss = Cds + Cgd
800
Crss = Cgd VDS=400V
VGS,Gate-Source Voltage[V]

8
700
VDS=640V
Capacitance [pF]

600 Ciss
6
500

400
4
300

200 Coss 2
@Note : ID=3.0A
100 Crss
0 0
100 101 0 5 10 15 20 25 30
VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC]
Preliminary
KA5L0380R S P S

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Fig. 7 Breakdown Voltage vs. Temperature Fig. 8 On-Resistance vs. Temperature

1.2 2.5

2.0
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BVDSS, (Normalized)

RDS(on), (Normalized)
1.5

1.0

1.0

@ Notes : @ Notes:
0.9 1. VGS = 0V 1. VGS = 10V
0.5
2. ID = 250µ A 2. ID = 1.5 A

0.8 0.0
-50 0 50 100 150 -50 0 50 100 150
o
T J, Junction Temperature [ C] T J, Junction Temperature [oC]

Fig. 9 Max. Safe Operating Area Fig. 10 Max. Drain Current vs. Case Temperature

102 3.5

Operation in This Area

ID , Drain Current [A]

is Limited by R DS(on) 3.0

101 10 µ s 2.5
100 µ s
ID, Drain Current [A]

1 ms
2.0
10 ms
100 DC
1.5

@ Notes : 1.0
10-1
1. TC = 25 oC
o
2. TJ = 150 C 0.5
3. Single Pulse
10-2 0.0
101 102 103 40 60 80 100 120 140
VDS , Drain-Source Voltage [V] TC, Case Temperature [oC]

Fig. 11 Thermal Response

100
Thermal Response

D=0.5
@ Notes :
0.2 1. Zθ J C (t)=1.25 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)
10- 1 0.05
ZθJ C(t) ,

0.02
0.01 single pulse

10- 2 - 5
10 10- 4 10- 3 10- 2 10- 1 100 101
t 1 , Square Wave Pulse Duration [sec]
Preliminary
KA5L0380R S P S

TYPICAL PERFORMANCE CHARACTERISTICS (Control part)

Fig.1 Operating Frequency Fig.2 Feedback Source Current

1.2 1.2
1.15 1.15
1.1 1.1
1.05 1.05
Fosc 1 Ifb 1
0.95 0.95
0.9 0.9
0.85 0.85
0.8 0.8

        -25 0 25 50 75 100 125 150

Fig.3 Operating Current Fig.4 Max Inductor Current

1.2 1.1
1.15 1.05
1.1
1.05 Ipeak 1
Iop 1 0.95
0.95 0.9
0.9
0.85 0.85
0.8 0.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Fig.5 Start up Current Fig.6 Start Threshold Voltage

1.5 1.15
1.3 1.1
1.05
1.1
Istart Vstart 1
0.9
0.95
0.7 0.9
0.5 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Preliminary
KA5L0380R S P S

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 Stop Threshold Voltage Fig.8 Maximum Duty Cycle

1.15 1.15
1.1 1.1
1.05 1.05
Vstop 1 Dmax 1
0.95 0.95
0.9 0.9
0.85 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Fig.9 Vcc Zener Voltage Fig.10 Shutdown Feedback Voltage

1.2 1.15
1.15 1.1
1.1
1.05 1.05
Vz 1 Vsd 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150

Fig.11 Shutdown Delay Current Fig.12 Over Voltage Protection

1.2 1.15
1.15
1.1
1.1
1.05 1.05
Idelay 1 Vovp 1
0.95 0.95
0.9
0.85 0.9
0.8 0.85
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Preliminary
KA5L0380R S P S

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on

1.15 Resistance
1.1 2.5
1.05 2
Vss 1 1.5
0.95 Rdson 1
0.9 0.5
0.85 0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
KA5L0380R

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

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 1999 Fairchild Semiconductor Corporation