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Ft0107ma PDF
Ft0107ma PDF
TO92
(Plastic) On-State Current Gate Trigger Current
1 Amp < 10 mA
Off-State Voltage
200 V ÷ 800 V (07, 09)
200 V ÷ 600 V (02, 03, 04, 05)
MT1
MT2
G This series of TRIACs uses a high
perfor mance PNPN technology.
These parts are intended for general
purpose AC switching applications
with highly inductive loads.
* 07, 09 sensitivities
Mar - 05
FT01...A
Electrical Characteristics
SYMBOL PARAMETER CONDITIONS Quadrant SENSITIVITY Unit
02 03 04 05 07 09
IGT (1) Gate Trigger Current VD = 12 VDC , RL = 33W, Tj = 25 ºC Q1÷Q3 MAX 3 3 5 5 5 10 mA
Q4 MAX 3 5 5 7 10 mA
VGT Gate Trigger Voltage VD = 12 VDC , RL = 33W, Tj = 25 ºC Q1÷Q3 MAX 1.3 V
Q1÷Q4 MAX 1.3 V
VGD Gate Non Trigger Voltage VD = VDRM , RL = 3.3KW, Tj = 125 ºC Q1÷Q3 MIN 0.2 V
Q1÷Q4 MIN 0.2 V
IH (2) Holding Current IT = 100 mA , Gate open, Tj = 25 ºC MAX 7 7 10 10 10 20 mA
IL Latching Current IG = 1.2 IGT, Tj = 25 ºC Q1, Q3 MAX 10 mA
Q1,Q3,Q4 MAX 7 7 10 10 20 mA
Q2 MAX 15 20 20 20 20 25 mA
dV/dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open MIN 10 10 20 20 20 50 V/µs
Tj = 125 ºC
(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs Tj = 125 ºC MIN 1.2 1.2 1.8 1.8 1.8 2.5 A/ms
(dv/dt)c= 10 V/µs Tj = 125 ºC MIN 0.6 0.6 0.9 0.9 0.9 1.5 A/ms
without snubber Tj = 125 ºC MIN
VTM (2) On-state Voltage IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC MAX 1.95 V
Vt(o) (2) Threshold Voltage Tj = 125 ºC MAX 0.95 V
rd (2) Dynamic Resistance Tj = 125 ºC MAX 1000 mW
IDRM/IRRM Off-State Leakage Current VD = VDRM , Tj = 125 ºC MAX 0.5 mA
VR = VRRM , Tj = 25 ºC MAX 5 µA
Rth(j-c) Thermal Resistance for AC 360º conduction angle 80 ºC/W
Junction-Case
Rth(j-a) Thermal Resistance
150 ºC/W
Junction-Ambient S =1cm 2
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
F T 01 02 B A 00 BU
FAGOR PACKAGING
FORMING
TRIAC
CASE
VOLTAGE
CURRENT
SENSITIVITY
Mar - 05
FT01...A
Fig. 1: Maximum power dissipation versus Fig. 2: RMS on-state current versus case
RMS on-state curren (full cycle). temperature (full cycle).
P (W) I T(RMS) (A)
1.25 1.25
1.0 1.0
0.75 0.75
0.50 0.50
360
0.25 º 0.25
a
IT(RMS)(A)
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.91.0 0 25 50 75 100 125
Zth(j-c) Tj initial
25 ºC
Tj
max
1
1E-1
Zth(j-a)
Tj max
Vto = 0.95
V
Rt = 0.600ý
VTM(V)
0.1
1E-2 tp (s)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0 1 2 3 4 5
Fig. 5: Surge peak on-state current versus Fig. 6: Non-repetitive surge peak on-state
number of cycles current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t.
I TSM ITSM(A). I2t (A2s)
8 100
Tj initial = 25 ºC Tj initial = 25 ºC
7 ITSM
6
10
5
3
1
I2 t
2
1
Number of cycles
Number of cycles tp(ms)
0 0.1
1 10 100 1,000 1 10
Mar - 05
FT01...A
Fig. 7: Relative variation of gate trigger Fig. 8: Relative variation of critical rate of Fig. 9: Relative variation of critical rate
current, holding current and latching versus decrease of main current versus junction of decrease of main current versus
junction temperature (typical values) temperature
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC] (dI/dt)c [Tj]/(dI/dc)c [Tj specified] (dV/dt)c (typical values).
2.5 2.0
6
1.8
2.0 5
IGT 1.6
4
1.4
1.5
3 1.2
IH&IL
1.0 1.0
2
0.8
0.5 1
0.6
(dV/dt)c (V/µS)
0 Tj(ºC) 0 Tj(ºC) 0.4
-40 -20 0 20 40 60 80 100 120 140 0 25 50 75 100 125 0.1 1.0 10.0 100.0
DIMENSIONS
REF. Milimeters
Min. Typ. Max.
A 0.9 1.2 1.5
B 4.40 4.6 4.80
C 2.34 2.54 2.74
D 1.07 1.27 1.47
E 4.40 4.6 4.80
F 12.7 14.1 15.5
G 3.40 3.6 3.86
H 1.30 1.5 1.70
a 0.38 0.44 0.51
b 0.33 0.41 0.51
DIMENSIONS
REF. Milimeters
Min. Typ. Max.
A - 1.5 -
B 4.55 4.6 4.65
C 4.96 5.08 5.2
D 2.42 2.54 2.66
E 4.55 4.6 4.65
F 12.7 14.1 15.5
G 3.55 3.6 3.65
a 0.38 0.43 0.48
b 0.33 0.38 0.43