Najjad Zeenni Department of

Faculty of Materials
Eengineering Engineering

Course Name: Electronic Materials

(0703342)

HOME WORK_MODULE 1

Student name: ______________________________________

Student Number: ______________________________________

Instructor: Dr. Omar Ayyad

Date: 08/04/2020

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Q.1. Explain how electrons and electron holes are created in pairs in intrinsic silicon. Use and
energy band diagram in your explanation.

Q.2. In indium (In), the electron drift mobility has been measured to be 6 cm2 V-1 s-1. The room
temperature (27 °C) resistivity of In is 8.37 ×10-8 Ω.m, and its atomic mass and density are 114.82
g mol–1 and 7.31 g cm-3, respectively.
Based on the resistivity value, determine how many free electrons are donated by each In atom
in the crystal. How does this compare with the position of In in the Periodic Table.

Q.3. In Silver, electron drift mobility has been measured to be 54 cm2 V−1 s−1 at 27 °C. The atomic
mass and density of Ag are given as 107.87 g mol−1 and 10.50 g cm−3, respectively.
Assuming that each Ag atom contributes one conduction electron, calculate the resistivity of Ag
at 27 °C. Compare this value with the measured value of 1.6 × 10−8 Ωm at the same temperature
and suggest reasons for the difference.

Q.4. Consider the conductivity of a semiconductor, σ = enµe + epµh. Will doping always increase
the conductivity?

Q.5. Consider the GaAs crystal at 300 K.

(ni = 1.8 × 106 cm-3, µe ≈ 8500 cm2 V-1 s-1 and µh ≈ 400 cm2 V-1 s-1).
Calculate the intrinsic conductivity and resistivity.

Q.6. What is the electron centration (n) at 300 K if a silicon sample is doped with 1017 boron
atoms/cm3. What is the resistivity? ni for Si = 1.5 x 1010 cm-3.

Q.7. If a silicon conductor of 5 micrometer length is doped n-type at 1015 cm-3, calculate the
current density for an applied voltage of 2.5 V across its length. The electron and hole mobilities
are 1500 cm2/V-s and 500 cm2/V-s, respectively.

Q.8. If the electrical resistivity of A boron-doped Silicon wafer = 5.0 x 10-4 ohm.cm at 27 oC.
Assume intrinsic mobilities and assume complete ionization as well. (A) what is the carrier
concentration. (B) what is the ratio of Boron to Silicon atoms in this semiconductor.

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