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HCPL-354-06AE HCPL-354-06AE

EN DE FR
This Datasheet is presented by Dieses Datenblatt wird vom Cette fiche technique est
the manufacturer Hersteller bereitgestellt présentée par le fabricant
 Agilent HCPL-354
AC Input Phototransistor
Optocoupler
SMD Mini-Flat Type
Data Sheet

Features
• AC input response
• Current transfer ratio
(CTR: min. 20% at IF = ± 1 mA,
VCE = 5 V)
Description Ordering Information • Isolation voltage between input
The HCPL-354 contains a Specify Part Number followed by and output (Viso = 3,750 Vrms)
phototransistor, optically coupled to Option Number (if desired). • Subminiature type
two light emitting diodes connected (The volume is smaller than that of
inverse parallel. It can operate HCPL-354-XXXE conventional DIP type by as far as
directly by AC input current. It is 30%)
packaged in a 4-pin mini-flat SMD Lead Free
• Mini-flat package
package with a 2.0 mm profile. The Option Number
small dimension of this product • 2.0 mm profile
allows significant space saving. The 000 = No Options • UL approved
package volume is 30% smaller than 060 = IEC/EN/DIN EN 60747-5-2 • CSA approved
that of conventional DIP type. Input- Option
• IEC/EN/DIN EN 60747-5-2
output isolation voltage is 3750 Vrms. 00A = Rank Mark A
approved
Response time, tr, is typically 4 µs
and minimum CTR is 20% at input • Options available:
current of ± 1 mA. – IEC/EN/DIN EN 60747-5-2
Functional Diagram approvals (060)

Applications
1 4
• Detecting or monitoring AC signals
• Programmable controllers
2 3 • AC/DC-input modules
• AC line/digital logic isolation
1. ANODE, CATHODE 3. EMITTER
2. CATHODE, ANODE 4. COLLECTOR

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawing

HCPL-354-000E
2.54
± 0.25

3.60 ± 0.3 5.30 ± 0.3

354 DATE CODE *1

Y WW 4.40 ± 0.2 2.00 ± 0.2 0.2 ± 0.05

LEAD
FREE

0.10 ± 0.1 + 0.2

0.40 ± 0.1 7.00 – 0.7

RANK *2

DIMENSIONS IN MILLIMETERS.

HCPL-354-060E
2.54
± 0.25

3.60 ± 0.3 5.30 ± 0.3

354 V DATE CODE *1

Y WW 4.40 ± 0.2 2.00 ± 0.2 0.2 ± 0.05

LEAD
FREE

0.10 ± 0.1 + 0.2

0.40 ± 0.1 7.00 – 0.7

RANK *2

DIMENSIONS IN MILLIMETERS.

Solder Reflow Temperature Profile 30 seconds

260°C (Peak Temperature)
1) One-time soldering reflow is 250°C
recommended within the 217°C
Temperature (°C)

condition of temperature and 200°C

time profile shown at right.
150°C
2) When using another soldering 60 sec
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the 25°C
60 ~ 150 sec 90 sec 60 sec
device. Keep the temperature on
the package of the device within Time (sec)

the condition of (1) above.

2
Absolute Maximum Ratings
Parameters Symbol Min. Max. Units
Storage Temperature TS –55 150 ˚C
Ambient Operating Temperature TA –55 100 ˚C
Lead Solder Temperature for 10s Tsol 260 ˚C
(1.6 mm below seating plane)
Average Forward Current IF ±50 mA
Input Power Dissipation PI 70 mW
Collector Current IC 50 mA
Collector-Emitter Voltage VCEO 35 V
Emitter-Collector Voltage VECO 6 V
Collector Power Dissipation PC 150 mW
Total Power Dissipation Ptot 170 mW
Isolation Voltage Viso 3750 Vrms
(AC for 1 minute, R.H. = 40 ~ 60%)[1]

Electrical Specifications (TA = 25˚C)

Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF – 1.2 1.4 V IF = ±20 mA
Terminal Capacitance Ct – 30 250 pF V = 0, f = 1 kHz
Collector Dark Current ICEO – – 100 nA VCE = 20 V, IF = 0
Collector-Emitter Breakdown Voltage BVCEO 35 – – V IC = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 6 – – V IE = 10 µA, IF = 0
Collector Current IC 0.2 – 4 mA IF = ±1 mA,
Current Transfer Ratio[2] CTR 20 – 400 % VCE = 5 V
Collector-Emitter Saturation Voltage VCE(sat) – 0.1 0.2 V IF = ±20 mA, IC = 1 mA
Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω DC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf – 0.6 1 pF V = 0, f = 1 MHz
Response Time (Rise) tr – 4 18 µs VCE = 2 V, IC = 2 mA,
Response Time (Fall) tf – 3 18 µs RL = 100 Ω

Rank Mark CTR (%) Conditions

A 50 ~ 150 IF = ±1 mA,
No Mark 20 ~ 400 VCE = 5 V,
TA = 25˚C
Notes:
1. Isolation voltage shall be measured using the following method:
(a) Short between anode and cathode on the primary side and between collector and emitter
on the secondary side.
(b) The isolation voltage tester with zero-cross circuit shall be used.
(c) The waveform of applied voltage shall be a sine wave.
I
2. CTR = C x 100%
IF

3
 PC – COLLECTOR POWER DISSIPATION – mW
60 200 6
TA = 25°C

VCE(SAT.) – COLLECTOR-EMITTER
IF – FORWARD CURRENT – mA

SATURATION VOLTAGE – V
50 5 IC = 0.5 mA
150
IC = 1 mA
40 4
IC = 3 mA
30 100 3 IC = 5 mA
IC = 7 mA
20 2
50
10 1

0 0 0
-55 0 25 50 75 100 125 -55 0 25 50 75 100 125 0 2.5 5.0 7.5 10.0 12.5 15.0
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C IF – FORWARD CURRENT – mA

Figure 1. Forward current vs. ambient Figure 2. Collector power dissipation vs. Figure 3. Collector-emitter saturation voltage
temperature. ambient temperature. vs. forward current.
CTR – CURRENT TRANSFER RATIO – %

500 140 50
TA = 75°C VCE = 5 V TA = 25°C

IC – COLLECTOR CURRENT – mA
IF – FORWARD CURRENT – mA

TA = 50°C 120 TA = 25°C

200 TA = 0°C 40
TA = 25°C
100 TA = -25°C 100 IF = 30 mA

50 30 PC (MAX.)
80

20 60 IF = 20 mA
20
10
40 IF = 10 mA
5
10
20 IF = 5 mA
2
IF = 1 mA
1 0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 0.2 0.5 1 2 5 10 20 50 100 0 1 2 3 4 5 6 7 8 9 10
VF – FORWARD VOLTAGE – V IF – FORWARD CURRENT – mA VCE – COLLECTOR-EMITTER VOLTAGE – V

Figure 4. Forward current vs. forward voltage. Figure 5. Current transfer ratio vs. forward Figure 6. Collector current vs. collector-
current. emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %

ICEO – COLLECTOR DARK CURRENT – nA

150 0.10 10000

IF = 1 mA IF = 20 mA
VCE(SAT.) – COLLECTOR-EMITTER

VCE = 5 V IC = 1 mA
SATURATION VOLTAGE – V

0.08 VCE = 20 V
1000
100
0.06
100
0.04
50
10
0.02

0 0 1
20 40 60 80 100 20 40 60 80 100 20 40 60 80 100
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C

Figure 7. Relative current transfer ratio vs. Figure 8. Collector-emitter saturation Figure 9. Collector dark current vs. ambient
ambient temperature. voltage vs. ambient temperature. temperature.

4
 100
VCE = 2 V VCE = 2 V
50 IC = 2 mA
IC = 2 mA tr
0 TA = 25°C

VOLTAGE GAIN AV – dB
20 TA = 25°C
RESPONSE TIME – µs

10 tf
5
RL = 10 kΩ
td
2 RL = 1 kΩ
ts -10
1 RL = 100 Ω
0.5

0.2
0.1 -20
0.1 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 100 1000
RL – LOAD RESISTANCE – kΩ f – FREQUENCY – kHz

Figure 10. Response time vs. load resistance. Figure 11. Frequency response.

VCC
INPUT

;;
RL
RD
INPUT OUTPUT 10%
OUTPUT

90%

td ts

tr tf

Figure 12. Test circuit for response time.

VCC

; ;;
RL
RD

OUTPUT

Figure 13. Test circuit for frequency response.

5
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand,
Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0313EN
November 3, 2004
5989-1739EN
 EN - For pricing and availability in your local country please visit one of the below links:

DE - Informationen zu Preisen und Verfügbarkeit in Ihrem Land erhalten Sie über die unten aufgeführten Links:

FR - Pour connaître les tarifs et la disponibilité dans votre pays, cliquez sur l'un des liens suivants:

HCPL-354-06AE HCPL-354-06AE

EN DE FR
This Datasheet is presented by Dieses Datenblatt wird vom Cette fiche technique est
the manufacturer Hersteller bereitgestellt présentée par le fabricant

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