Professional Documents
Culture Documents
Effect of The Thickness of The PT Film Coated On A Counter Electrode On The Performance of A Dye-Sensitized Solar Cell
Effect of The Thickness of The PT Film Coated On A Counter Electrode On The Performance of A Dye-Sensitized Solar Cell
Electroanalytical
Chemistry
Journal of Electroanalytical Chemistry 570 (2004) 257–263
www.elsevier.com/locate/jelechem
Abstract
The effects of the thickness and morphology of a Pt film coated on a counter electrode on the performance of a dye-sensitized
solar cell (DSC) were investigated. Deposition of a Pt film ranging in thickness from 2 to 415 nm gradually decreases the sheet
resistance of the counter electrode. No significant difference in the charge-transfer resistance at the electrolytejcounter electrode
interface was observed for a Pt film thickness ranging from 25 to 415 nm. A high energy conversion efficiency of approximately 5%
can be obtained for DSCs based on a counter electrode with a very thin Pt film of 2 nm, as well as with a 415-nm thick Pt film. These
results are important for reducing production costs by reducing the required amount of expensive platinum.
Ó 2004 Elsevier B.V. All rights reserved.
Keywords: Pt film thickness; Counter electrode; Dye-sensitized solar cell; Performance; Sheet and charge-transfer resistance
0022-0728/$ - see front matter Ó 2004 Elsevier B.V. All rights reserved.
doi:10.1016/j.jelechem.2004.04.004
258 X. Fang et al. / Journal of Electroanalytical Chemistry 570 (2004) 257–263
approximately 920 nm [15–18]; theoretical analysis on 2.2. Fabrication and characterizations of platinized
charge-transport processes and models in mesoporous counter electrodes
nanocrystalline TiO2 films [19–21]; substitution of sol-
id-state heterojunctions for the liquid electrolyte [22– Platinized counter electrodes were fabricated by de-
27], etc., whereas, few studies have been performed on positing Pt particles onto conducting glass sheets using
the counter electrode in the DSC. To reduce the fab- an r.f. magnetron sputtering instrument (TOKUDA,
rication cost of the counter electrodes, Suzuki et al. MODEL CFS-4ES-231USC; power, 200 W; deposition
[28] applied carbon nanotubes to the counter electrodes
rate, 2.8 A/s). The Pt film thickness was controlled by
in place of expensive Pt, and Saito et al. [29] used variation of the deposition time. Measurement of the
chemically polymerized poly (3,4-ethylenedioxythioph- exact thickness of the Pt film was impossible for thin
ene) on a conductive glass as a counter electrode. films on the very rough surface of the FTO glass sub-
However, the conversion efficiencies of the DSCs based strate. The thickness of the Pt film was estimated for the
on these new types of counter electrodes were lower convenience of discussion. The relationship between the
than that based on the platinized counter electrode. Pt film thickness and the deposition time is shown in
Until now, platinized FTO glass has been the preferred Table 1.
material for the counter electrode of a DSC due to the The surface microstructures of the FTO glass and the
excellent catalytic activity of Pt for triiodide reduction; platinized FTO glass counter electrodes prepared were
however, less attention has been paid to the effect of Pt observed using a scanning electron microscope (SEM,
film thickness on the properties of platinized counter Hitachi S–5200).
electrodes. The sheet resistances of the platinized counter elec-
We have performed systematic studies on counter trodes were measured by a four-dot method (HL5500
electrodes, including the effect of Pt film thickness on the PC Hall effect measurement system).
performance of the DSCs and the development of novel Electrochemical impedance spectroscopy (EIS) was
substrate materials for the counter electrode. employed to determine the charge-transfer kinetic per-
In this paper, we report the properties of platinized formance at the electrolytejplatinized counter electrode
counter electrodes with Pt films of different thicknesses, interface. For EIS measurements, a sandwich cell con-
including surface microstructures, sheet resistances, sisting of two identical platinized FTO electrodes, be-
light-reflecting properties, charge-transfer resistances of tween which a Surlyn film (Dupont, 50 lm) was inserted
the platinumjelectrolyte interface, with a view to eluci- as a spacer, was used. The active area of the electrodes
dating the effects of the Pt film thickness of counter was about 0.8 cm2 . The cell was filled with an electro-
electrodes on the performance of DSCs. lyte, which was composed of 0.1 M LiI + 0.1 M I2 + 0.6
M 1,2-dimethyl-3-propylimidazolium iodine + 0.5 M
tert-butylpyridine in methoxypropionitrile. EIS spectra
2. Experimental were obtained at zero bias potential and 10 mV ampli-
tude over the frequency range of 0.05–105 Hz.
2.1. Preparation of TiO2 working electrodes The light-reflecting property of the platinum mirror
surface of the counter electrode was determined by
Porous TiO2 films were prepared by a screen-printing measuring the UV–Vis reflection spectra of the dye-
technique (Screen: Mitani Electronics, MEC3000) onto sensitized TiO2 film, which faced the platinized counter
an FTO glass sheet (Asahi Glass Co. Ltd., fluorine- electrode and was irradiated from the front and back
doped SnO2 overlayer, FTO, sheet resistance: 10 X/sq) glass side, using a UV–Vis spectrophotometer equipped
with a viscous paste of TiO2 powder (P25, Nippon
Aerosil). The paste was prepared using 100% polyeth-
ylene 600 as a dispersion medium, developed by Ma Table 1
et al. [30]. Twenty-five pieces of homogeneous TiO2 film The performances of platinized counter electrodes with Pt films of
(area: 0.2 cm2 ) were formed on an FTO glass sheet at different thicknesses
one time. The thickness of the TiO2 films obtained was Sputtering Pt film Rs (X/cm2 ) Rct (X/cm2 )
approximately 14 lm. After drying at 50–60 °C for 15 time (s) thickness (nm)
min on a hot plate, the TiO2 films were sintered at 450 0 0 10 1.5 107
°C for 30 min, impregnated with a 0.05 M titanium 7 2 8.85 0.8
36 10 6.50 1.2
tetrachloride solution in a hermetic glass bottle at 70 °C
90 25 3.19 2.1
for 30 min, followed by a firing at 500 °C for 30 min. 180 50 2.28 1.6
The TiO2 films obtained were immersed in an ethanol 360 100 1.18 2.1
solution of cis-bis(isothiocyanato)bis(2,20 -bipyridyl-4,40 - 720 200 0.60 1.7
dicarboxylato)- ruthenium(II)bis-tetrabutylammonium 1080 300 0.39 1.7
1500 415 0.32 2.1
(N719 dye, 5 104 M) for 12 h at 25 °C.
X. Fang et al. / Journal of Electroanalytical Chemistry 570 (2004) 257–263 259
with an integrating sphere setup (JASCO V-570). The films from 25-nm to 415-nm thickness possessed good
UV–Vis absorption spectra for the configuration of mirror surfaces. Fig. 1 shows the SEM surface mor-
clamping the TiO2 film with the counter electrodes phology of bare FTO glass and FTO glass coated with
containing Pt films of various thicknesses were also Pt films of 100-, 200- and 415-nm thickness. As is shown
measured. in Fig. 1(a), the bare FTO glass has a rough scale-like
surface structure due to the fluorine-doped SnO2 layer
2.3. Photovoltaic characterizations of the 740-nm thick coating on the glass sheet, because
such a structure is considered to be helpful for the ad-
Current–voltage curves of the DSCs based on the hesion of the Pt film on the surface. It was also observed
counter electrodes with Pt films of different thickness that the 100-nm thick Pt film sputtered on an FTO glass
were obtained by scanning a bias voltage while mea- substrate is constructed of Pt nanoparticles with a grain
suring photocurrents under white light irradiation (100 size of ca.14 nm, as is shown in the inset of Fig. 1(b), and
mW/cm2 ) using a sandwich solar cell constructed of the for the Pt films of 2-, 10-, 25- and 50-nm thickness, the
dye-sensitized TiO2 electrode and the platinized counter sizes of the Pt nanoparticles are less than 10 nm (not
electrode. A 300 W Xe short ARC lamp (Ushio inc., shown here). When the Pt film thickness increased to
Japan) served as a light source. The photon flux im- 200 nm, the grain size of Pt particles grew to 40–60 nm
pinging on the cell was determined by a power meter (inset of Fig. 1(c)). Furthermore, as the Pt film thickness
(Nova, Ophir Optronics Ltd.) and a calibration cell (BS- increased to 415 nm, the granular surface microstructure
520, s/n 019, Bunkoh-Keiki Co., Ltd.). The composition disappeared, and an uneven Pt film was formed on the
of the electrolyte solution used was as the same as that F-doped SnO2 layer, as is shown in the inset of Fig. 1(d).
described in Section 2.2. It can be concluded that the grain size of the Pt particles
gradually increased and their porosity declined with the
increase in deposition time, due to the aggregation of the
3. Results and discussion Pt nanoparticles during sputtering.
3.1. Surface morphologies of Pt films sputtered on FTO 3.2. Effect of Pt film thickness on sheet resistances of
glass counter electrodes
For the surfaces of counter electrodes with Pt films of Fig. 2 illustrates the dependence of the sheet resis-
2- and 10-nm thickness, no obvious mirror appearance tance Rsh of the platinized counter electrode on the Pt
was observed, whereas the counter electrodes with Pt film thickness, that is, on the sputtering time. The sheet
Fig. 1. Surface morphologies of FTO glass and platinized FTO glass counter electrodes: (a) FTO glass substrate; (b–d) platinized counter electrode
with Pt films of 100-nm, 200-nm, and 415-nm thicknesses.
260 X. Fang et al. / Journal of Electroanalytical Chemistry 570 (2004) 257–263
3.3. Effect of the Pt film thickness on the charge-transfer Fig. 3. A typical electrical impedance spectrum for a symmetric Pt thin-
resistance layer cell taken at zero bias potential and 10 mV amplitude.
Bldg. Chem. React. Sci., Tohoku Univ. This research [16] J.-J. Lagref, Md.K. Nazeeruddin, M. Gr€atzel, Synthetic Metals
was supported by the Japan Science and Technology 138 (2003) 333.
[17] T. Ma, K. Inoue, H. Noma, K. Yao, E. Abe, J. Photochem.
Corporation.
Photobiol. A: Chem. 152 (2002) 207.
[18] T. Ma, K. Inoue, K. Yao, H. Noma, T. Shuji, E. Abe, J. Yu, X.
Wang, B. Zhang, J. Electroanal. Chem. 537 (2002) 31.
References [19] S.Y. Huang, G. Schlichth€ orl, A.J. Frank, J. Phys. Chem. B 101
(1997) 2576.
[1] B. O’Regan, M. Gr€atzel, Nature 353 (1991) 737. [20] J. van de Lagemaat, A.J. Frank, J. Phys. Chem. B 105 (2001)
[2] M.K. Nazeeruddin, A. Kay, R. Humphry-Baker, E. M€ uller, P. 11,194.
Liska, N. Vlachopoulos, M. Gr€atzel, J. Am. Chem. Soc. 115 [21] L.M. Peter, N.W. Duffy, R.L. Wang, K.G.U. Wijayantha, J.
(1993) 6382. Electroanal. Chem. 524–525 (2002) 127.
[3] C.J. Barbe, F. Arendse, P. Comte, M. Jirousek, F. Lenzmann, V. [22] U. Bach, D. Lupo, M. Gr€atzel, Nature 395 (1998) 583.
Shklover, M. Gr€ atzel, J. Am. Ceram. Soc. 80 (1995) 3157. [23] T. Kitamura, M. Maitani, S. Ynagida, Chem. Lett. (2001)
[4] A. Kay, M. Gr€ atzel, Sol. Ener. Mater. Sol. Cell 44 (1996) 99. 1054.
[5] M.K. Nazeeruddin, P. Pechy, T. Renouard, S.M. Zakeeruddin, R. [24] M.A. De Paoli, A.F. Nogueira, D.A. Machado, C. Longo,
Humphry-Baker, P. Comte, P. Liska, L. Cevey, E. Costa, V. Electrochim. Acta 46 (2001) 4243.
Shklover, L. Spiccia, G.B. Deacon, C.A. Bignozzi, M. Gr€atzel, J. [25] C. Longo, A.F. Nogueira, M.A. De Paoli, J. Phys. Chem. B 106
Am. Chem. Soc. 123 (2001) 1613. (2002) 5925.
[6] M.K. Nazeeruddin, R. Humphry-Baker, P. Liska, M. Gr€atzel, J. [26] B. O’Regan, F. Lenzmann, R. Muis, J. Wienke, Chem. Mater. 14
Phys. Chem. B 107 (2003) 8981. (2002) 5023.
[7] A. Hagfeldt, M. Gr€atzel, Chem. Rev. 95 (1995) 49. [27] S. Murai, S. Mikoshiba, H. Sumino, S. Hayase, J. Photochem.
[8] N. Papageorgiou, P. Liska, A. Kay, M. Gr€atzel, J. Electrochem. Photobiol. A 148 (2002) 33.
Soc. 146 (1999) 898. [28] K. Suzuki, M. Yamaguchi, M. Kumagai, S. Yanagida, Chem.
[9] M. Gr€ atzel, Curr. Opin. Colloid Interface Sci. 4 (1999) 314. Lett. 32 (2003) 28.
[10] M. Gr€ atzel, Nature 414 (2001) 338. [29] Y. Saito, T. Kitamura, Y. Wada, S. Yanagida, Chem. Lett. 31
[11] Y. Liu, A. Hagfeldt, X.-R. Xiao, S.-E. Lindquist, Sol. Ener. (2002) 1060.
Mater. Sol. Cell 55 (1998) 267. [30] T. Ma, T. Kida, M. Akiyama, K. Inoue, S. Tsunematse, K. Yao,
[12] K. Sayama, H. Sugihara, H. Arakawa, Chem. Mater. 10 (1998) H. Noma, E. Abe, Electrochem. Commun. 5 (2003) 369.
3825. [31] J. van de Lagemaat, N.-G. Park, A.J. Frank, J. Phys. Chem. B 104
[13] N. Papageorgiou, Y. Athanassov, M. Armand, P. Bonh^ ote, H. (2000) 2044.
Pettersson, A. Azam, M. Gr€atzel, J. Electrochem. Soc. 143 (1996) [32] R. Kern, R. Sastrawan, J. Ferber, R. Stangl, J. Luther, Electro-
3099. chim. Acta 47 (2002) 4213.
[14] N. Papageorgiou, W.F. Maier, M. Gr€atzel, J. Electrochem. Soc. [33] A. Hauch, A. Georg, Electrochim. Acta 46 (2001) 3457.
144 (1997) 876. [34] N. Koide, H. Imai, T. Mitate, L.Y. Han, XXIst Intern. Conf. on
[15] T. Renouard, R.-A. Fallahpour, Md.K. Nazeeruddin, R. Hump- Photochem., Book of Abstracts 2003, 2P031.
hry- Baker, S.I. Gorelsky, A.B.P. Lever, M. Gr€atzel, Inorg. Chem. [35] E. Olsen, G. Hargen, S.E. Linquist, Sol. Ener. Mater. Sol. Cell 63
41 (2002) 367. (2000) 267.