UNIVERSITY OF CALIFORNIA

College of Engineering
Department of Electrical Engineering and Computer Sciences

EECS 130 Professor Chenming Hu

Spring 2008

Midterm II - Solutions

Name:

SID:

Problem 1 20
Problem 2 20
Problem 3 20
Problem 4 20
Problem 5 20
Total 100
Problem 1 [20pts]

Answer the following questions concisely:

In a forward-biased P+N diode,

(a) [5pts] Which type of carrier (electron or hole) dominates the carrier injection
across the P-N junction?

Hole.

(b) [5pts] Which type of carrier contributes most of the stored minority carriers?

Hole.

(c) [5pts] Which recombination lifetime (that of the N side or the P side) determines
the switching speed of this diode?

N side

(d) [5pts] Which side has the larger depletion region?

N side
Problem 2 [20pts]

Consider a MOS capacitor with N+ polysilicon gate and N a = 5 ×1017 cm −3

(a) [10pts] The C-V characteristic of this MOS capacitor is shown below. Suppose
this MOS capacitor is used in a voltage-controlled oscillator, which
C
requires a capacitance tuning range of max = 1.5 , what’s the required
Cmin
oxide thickness (Tox) ? Ignore poly depletion effects and inversion
charge thickness effects.

Cmax

Cmin

Vg(V)
Vfb 0 Vt

εs kT ⎛ N A ⎞
Cdep = = 2.12 × 10−7 F 2 φB = ln ⎜ ⎟ = 0.46V
Wdep ,max cm q ⎝ ni ⎠

2ε s 2φB 2 ⋅11.7 ⋅ 8.854 × 10−14 F ⋅ 2 ⋅ 0.46V

Wdep ,max = = cm = 4.88 ×10−6 cm = 48.8nm
qN a 1.6 × 10−19 C ⋅ 5 × 1017 cm −3

Cdep Cox
Cmin = Cmax = Cox
Cdep + Cox
Cmax Cdep + Cox C
1.5 = = = 1 + ox
Cmin Cdep Cdep
Cox = 0.5Cdep = 1.06 ×10−7 F
cm 2
3.9 ⋅ 8.854 ×10−14 F
Tox = cm = 3.26 ×10−6 cm = 32.6nm
−7
1.06 × 10 F
cm 2
(b) [5pts] Assume the fixed oxide charge density at the p-type silicon / SiO2
interface is N it = 1012 cm −2 . The charge is positive. What is the flatband
voltage, Vfb? Assume Tox=10nm. Don’t use the Tox calculated in (a).

ε ox
Cox = = 3.45 ×10−7 F
Tox cm 2
−19 12 1
qN ox 1.6 × 10 C ⋅10 cm 2 = 0.46V
=
Cox 3.45 ×10−7 F 2
cm
Q 5 × 1017 Qox qN
V fb = Φ g − Φ s − ox = −0.56V − 0.026V ⋅ ln 10
− = −1.02 − ox = −1.48
Cox 10 Cox Cox

(c) [5pts] Assume there are 3 electron traps (electron states), A, B, and C in the
SiO2, as shown below. A is 0.5eV above Ef; B is located at Ef; C is 0.5eV
below Ef. What is the probability that
(1) A is filled
(2) B is empty
(3) C is empty Ec
A
Ef B Ef
1 1 Ev
f ( EA ) = = = 4.45 × 10−9
⎛ E − Ef ⎞ ⎛ 500meV ⎞ C
1 + exp ⎜ A ⎟ 1 + exp ⎜ 26meV ⎟
⎝ kT ⎠ ⎝ ⎠

1 1
f ( EB ) = 1 − = 1− = 0.5
⎛ EB − E f ⎞ 1 + exp ( 0 )
1 + exp ⎜ ⎟
⎝ kT ⎠

⎛ E − Ef ⎞
exp ⎜ T ,C ⎟
1 ⎝ ⎠
f ( ET ,C ) = 1 −
kT
=
⎛ E − Ef ⎞ ⎛ ET ,C − E f ⎞
1 + exp ⎜ T ,C ⎟ 1 + exp ⎜ ⎟
⎝ kT ⎠ ⎝ kT ⎠
−9
4.45 × 10
= −9
= 4.45 × 10−9
1 + 4.45 × 10
Problem 3 [20pts]

An n-channel MOSFET is fabricated on a p-type silicon wafer with N a = 1017 cm −3 . The

gate is N+ polysilicon. Vt − V fb = 1.2V , μns = 300cm2 / V − s , T=300K,
m=1.

(a) [5pts] What is the flatband voltage, Vfb?

Eg kT ⎛ N a ⎞ ⎛ 1017 ⎞
V fb = ψ g −ψ s = − − ln ⎜ ⎟ = − 0.56 − 0.026 ⋅ ln ⎜ 10 ⎟ = −0.98
2q q ⎝ ni ⎠ ⎝ 10 ⎠

(b) [5pts] If a gate dielectric with a large dielectric constant (high-κ dielectric), εox /
ε0 = 25 is used as the gate dielectric, what is the required oxide thickness
(Tox) to achieve Vt − V fb = 1.2V ?

kT ⎛ N a ⎞ ⎛ 1017 ⎞
φB = ln ⎜ ⎟ = 0.026 ⋅ ln ⎜ 10 ⎟ = 0.42
q ⎝ ni ⎠ ⎝ 10 ⎠
2ε s qN a 2φB
Vt = V fb + 2φB +
Cox
2ε s qN a 2φB
Cox =
Vt − V fb − 2φB

2 ⋅11.7 ⋅ 8.8542 ×10−14 F ⋅1.6 ×10−19 C ⋅1017 cm −3 ⋅ 2 ⋅ 0.42

= cm = 4.64 × 10−7 F 2
1.2 − 2 ⋅ 0.42 cm
−14 F
ε 25 ⋅ 8.8542 ×10
Tox = ox = cm = 4.77 × 10−6 cm = 47.7nm
−7 F
Cox 4.64 ×10
cm 2

(c) [5pts] If Vgs-Vt=1.0V, Vds=1.5V, is the transistor operating in linear region or

saturation region?

Vgs − Vt
Vdsat = = 1.0 < Vgs − Vt
m

The transistor is operating in the saturation region

Problem 4. [20pts]

Consider an n-channel MOSFET with a P+ polysilicon gate, a width to length ratio of / 2,

an oxide thickness of 10 , and body doping of 5 10 .

[5pts] (a) Calculate the threshold voltage .

0.401

Since the gate is P+ polysilicon gate the flat-band voltage is,

0.159
2 2

2 2
2 0.159 0.802 0.334 1.295

[5pts] (b) Calculate the body-effect factor .

3 3
1 1 1.208
2 2
[5pts] (c) Find the drain current at 3.5 and 2 . Use the values obtained from
(a) and (b). Assume 250 / · . (If you haven’t solved (a) and (b), use
1 and 1.3.)

Using results from (a) and (b),

3.5 1.295
1.825 2
1.208
So the transistor is in saturation.

0.348
2

Using the given values,

3.5 1
1.923 2
1.3

0.415
2

[5pts] (d) Determine threshold voltage with a body to source reverse bias of 2 .
Assume a constant maximum depletion width of 0.15 m with a retrograde
doping profile.

3 10 10 cm
1.295 2
0.15 10 cm
1.295 0.2 2

1.295 0.4

1.695
Problem 5. [20pts]

Design an n-channel MOSFET with a polysilicon gate to have a threshold voltage of 1 .

Assume an oxide thickness of 10 , a channel length of 1 , and a body-effect
factor of 1.

[5pts] (a) What is the standard polysilicon gate doping type for this transistor?

The standard polysilicon gate doping is N+.

[5pts] (c) Determine is the body doping . Assume 0.45 but do not determine from
/ ln / .

2 2 4
2 2
2

4.924 10
2 4
[10pts] (c) A drain current of 1.35 is required at 3 . Calculate the required
device width . Use the universal mobility curve given below to find .

First we find the mobility.

0.2 3 1 0.2
0.7 /
6 6 10 10

325 / ·

Calculating Vdsat show the transistor is in saturation.

3 1
2 3
1
So the current is written as,

1.35
2
2· · ·
6.015