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Ch6 Transistors Amplifiers

電晶體放大器
PART II :MOSFET

6.1.1. The Basic for Amplifier Operation

NMOS is operated in the saturation region
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the voltage controlled current source (VCCS) can serve as transconductance amplifier.

function
of input

vout
 
supply vG

(eq6.3) vDS  vDD  iD RD

Figure 6.2: (a) an NMOS

amplifier

電壓轉移特性:Voltage Transfer Characteristic (VTC)

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Obtain Linear Amplification by Biasing the Transistor

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6.2.2. The MOSFET Case : Small-Signal Equivalent Models

6.2.1. The MOSFET Case The Transconductance gm

1 1
iD  k n (vGS  Vtn ) 2  k n vOV
2 2

iD
gm   k n (vGS  Vtn )  k n vOV
vGS vGS VGS

ID
g m  k nvOV  2k n I D 
(vOV / 2)
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The Transconductance gm
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Example 6.3: MOSFET Amplifier

求(a)小信號電壓增益。(b)輸入電阻。(c)最大容許的輸入信號。

Figure 6.15: NMOS: Vtn  1.5V, k n (W / L )  0.25mA/V 2 , V A  50 V

Step 1. 直流分析(DC Analysis): 1.去除信號(Signal):ac成份 2.耦合電容開路

，求工作點電流ID = ?

1 1
ID  kn (W / L)(VGS  Vtn ) 2   0.25  [(15  10 I D )  1.5]2
2 2

 I D  1.06mA

VGS  VDS  15  10 I D  4.4V

VOV  VGS  Vtn  4.4  1.5  2.9V

Vtn  1.5V, k n (W / L )  0.25mA/V 2 , V A  50 V

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Step 2. ID = 1.06mA 、VOV = 2.9V ，求電晶體小信號參數。

Vtn  1.5V, k n (W / L )  0.25mA/V 2 , VA  50V

ID
g m  k n vOV  2k n I D   0.725mA / V
(vOV / 2)
VA 50
ro    47 k
I D 1.06

Step 3. 交流分析(ac Analysis): 1.去除DC成份。2.耦合電容短路，畫ac電路。

vi  vo vi  vo v
ii  i  0   g m vi  o 1
0
RG RG RL RG
1 1 1 vo
(  g m )vi  (  )vo  Av    g m RL
RG RL RG vi

RL  10 // 10 // 47  4.52k
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RL  4.52k g m  0.725mA / V

(a)小信號電壓增益。

vo
Av    g m RL  -3.3V/V
vi

(b)輸入電阻。
v v v  [( g m RL )vi ]
ii  i o  i
RG RG
v RG
Ri  i 
ii 1  g m RL

10M
Ri   2.33M
1  3.3

(c)最大容許的輸入信號。

vGS max  VGS  vˆi 注: [直流偏壓+輸入信號峰值]

vDS min  VDS  Av vˆi

[邊界條件:三極區/飽和區]
(VDS  Av vˆi )  (VGS  vˆi )  Vtn

VGS  VDS

Vtn 1. 5
 vˆi    0.35V
1  AV 1  3.3
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Example 6.4. 求(a)小信號電壓增益。(b)輸入電阻。

ID
g m  k n vOV  2k n I D 
(vOV / 2)

Figure 6.18 (a) Amplifier circuit for Example 6.4. (b) Small-signal equivalent circuit of the amplifier in (a).

交流分析(ac Analysis): 1.去除DC成份。2.耦合電容短路，畫ac電路。

Figure 6.18 (a) Amplifier circuit for Example 6.4. (b) Small-signal equivalent circuit of the amplifier in (a).
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1
vi  i ( )
gm

vo  iRD

ii  i

vi 1
 Ri  
ii g m

vo
 Av   g m RD
vi

Figure E6.5 Circuits for Exercise 6.5. Note that the bias arrangement of Q is not shown.
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Figure 6.19 Small-signal, equivalent-circuit model of a MOSFET in which the source is not connected to the body.

6.3.1. The Three Basic Configurations

Figure 6.33 The basic configurations of

transistor amplifier. (a)-(c) For the MOSFET.
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ID
g m  k nvOV  2k n I D 
(vOV / 2)

The Common-Source (CS)[未接負載RL]

vo
Avo    g m ( RD // ro )
vi RL  

Figure 6.35 (a) Common-emitter amplifier fed with a signal vsig from a generator with a resistance Rsig.
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The Common-Source (CS)[具有源極電阻RS，未接負載RL]

Figure 6.37 The CS amplifier with a source resistance Rs: (a) Circuit without bias details;
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The Common-Source (CS)[具有源極電阻RS，接負載RL]

RD RL
( RD // RL ) 
RD  RL

vo RL g R RL g ( R // RL )
Gv  Av   Avo  ( ) Av  ( m D )  ( ) m D
vsig ( vi ) Ro  RL 1  g m RD RD  RL 1  g m RD

6.3.5. The Common-Gate (CG )[未接負載RL]

vo
Avo   g m RD
vi RL  

Figure 6.39(a) Common-gate (CG) amplifier with bias arrangement omitted. (b) Equivalent circuit of the CG
amplifier with the MOSFET replaced with its T model.
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6.3.5. The Common-Gate (CG )[接負載RL]

vo 1/ g m RL
Gv  ( )  Avo  ( )
vsig Rsig  1 / g m RD  RL

6.3.6. 源極隨耦器(The Source Follower)

The Need for Voltage Buffers(電壓緩衝器)

Figure 6.41 Illustrating the need for a unity-gain buffer amplifier.

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6.3.6. Characteristics Parameters of the Source Follower

Rin  
1
Ro  (eq6.127)
gm

Figure 6.42 (a) Common-drain amplifier or source follower with the bias circuit omitted.
(b) Equivalent circuit obtained by replacing the MOSFET with its T model.

6.3.6. Characteristics Parameters of the Source Follower

vo RL
(eq6.125) Av  
vi RL  1 / g m
(eq6.126) (setting RL  ) Avo  0

(eq6.127) Ro  1 / g m
RL
(eq6.128) Gv  Av 
RL  1/ g m

Figure 6.42 (b) Equivalent circuit obtained by replacing the MOSFET with its T model.
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6.4.1. The MOFET Case:Biasing by Fixing VGS

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6.4.1. Biasing by Fixing VGS and Connecting a Resistance in the Source:

加入源極電阻RS，改善靜態工作點ID變動太大的問題。
RS的負回授作用使之得到退化電阻(degeneration resistance)的名稱。

(eq6.137) VG  VGS  RS I D

Figure 6.48 Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (c)
practical implementation using a single supply; (d) coupling of a signal source to the gate using a
capacitor CC1; (e) practical implementation using two supplies.