MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ‘The 2SK1292is N-channel MOS Field Effect Transistor designed for herds tibetan solenoid, motor and lamp driver. toos03 45202 FEATURES | 222202 27202 © Low on-state Resistance t 3 Rosion $0.08 0 (Ves = 10 V, lo= 10 A) : 2 Fosion $0.1 0 (Vos 4 V, lo 10 A) 3 Ey © Low Cin Cin = 2.200 pF TYP. 3 5 © Built-in G-S Gate Protection Diode | 3| 129 a QUALITY GRADE J Standard + _Plaaseretorto “Quality grade on NEC SemiconductorDevices” (Docu: } g ‘ment number IEl-1209) published by NEC Corporation to know the 3 specification of quality grade on the devices and its recommended applications. 0701} |]] [73202 osse03| |2seo1 PUTS 202 ABSOLUTE MAXIMUM RATINGS (Ts = 25 °C) caua ae oe Drain to Source Voltage Voss 100 =v 3 Source Gate to Source Voltage Voss «3202 V : Drain Current (DC) too 2 OA ~~ Drain Current (pulse) login? = «$80 Total Power Dissipation (Te = 25 °C) Pri 3 OCW Total Power Dissipation (Ts = 25°C) Pra 2.0 w Drain (0) Channel Temperature To 160 °c Storage Temperature Tw 85104150. °C | + PWS 10 us, Duty Cyclo $1 % Gate ek sate protectin ode ‘outo (8) ‘Document No. TC-2901 Dato Pushed Jy 1008 M. Paitin Jopan (© NEC Corporation 1999NEC 2SK1292 ELECTRICAL CHARACTERISTICS (Ts = 25 °C) (CHARACTERISTIC syweo. | win. | Te. | MAX. | UNIT | TEST CONDITIONS {o Source On-state Resistance | _ Row 007 | 008 | a | Va=1V,b=10A to Source On-state Resistence | _ Row 008 [01 | a | Ve=s0v,b=10A Gate to Source Cutoff Voltage Vou [10 25 |v _|ver=10V, b= 1ma Forward Transfer Admittance Lys 12 s Vos = 10 V, lo=10 A Drain Leakage Current toe 70 aA _| Veen 100V, Vene0 Gate to Source Leakage Current tone a0 | wA_| Verns20V, Von Input Copactance om 2200 F | vant0v Output Capecitonce Co 350 pF | Veo Reverse Transfer Capacitance Com 90 pF fot Mite Turn-On Delay Time ton 5 "| Voom -tov Rise Time ® 160 ns_| Voo= 50 ‘Turn-Off Delay Time tan 200 ng |= 15A,Re= 100 [Cretrtine . 180 | eee Total Gate Cherge Oe %0 nC | vee 10v Gate to Source Charge Os 0 nC] t0=30A Gate to Drain Charge Qeo 10 oe Diode Forward Vottoge Veo 1a V_[we=20A Vr=0 Reverse Recovery Time a 200 ns [230A Ver=0 Reverse Recovery Cherge or 350 nc _ | aat~ 50 Ans Test Circuit 1: Switching Time wr Re ye 190 % fel Re [Sno 1064 PG. Ro= 10Q ‘Veo : Bee pele lb Vou le | 0 108 6 teed aly ast Bury Bree s 1% Test Circuit 2: Gate Charge lan 2ma v= 2 our rR. Po. = ve m7NEC 2SK1292 TYPICAL CHARACTERISTICS (Ts = 25 °C) DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION ve SAFE ONCRAMNG AREA QSSEMBERATURE ® = ¢ = fa 0 a g 3 20| 2 ew g 20} 7” € 3 2 2 1 i é 5 020408080 T0d T0140 To ° 2360 Te~Cose Temperature ~*C Te~ Case Temperature °C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA BRAIN FO SOURCE VOLTAGE 100, tid J SJ . s 60 e | < < £10 2 a 5 5 Venav 3 3 2 = 2 & Gad ne \Tc = 25°C | , Bee Pulsed 1 10 105 000 dpe 10 aca Vor Dein to Source Votage -V Vow Drain to Source Votage -V ‘TRANSFER CHARACTERISTICS « i 3 & 4 Vor = 10 Pulsed a ee Vor ~ Gate to Source Voltage - Vfalt)= Transient Thermal Resistance ~ °C Forward Transfer Admittance ~ S Iya Foss ~Drain to Source On-State Resistance on 001 2SK’ ‘TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Ton 1008 1m on FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Vee = 10 V| Pulsed 1 10 lo— Drain Current — A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 700 1 10 lo Drain Current A 10m 100m PW Pulse With 5 Vs ~ Drain to Source Voltage - V Vorun — Gate to Source Cutoff Votage -V 25; 20 15] 10 os| gin ae & DRAIN TO SOURCE VOLTAGE vs. GATE TO SOURCE VOLTAGE 1292 700 Pulsed p= 15a | b=6A «8 12 16 20 \Vor~ Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. Ta\~ Channel Temperature ~°C CHANNEL TEMPERATURE vee = 10] b= tma | PY 0 30100150z A 2SK1292 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE § 2 Vee WW, |—iov 2 a 4 ° %0 Tay=Channel Temperature = °C eens ~ Drain to Source On-State Resistance ~ 0 ° CAPACITANCE ve. DRAIN TO SOURCE VOLTAGE Gan, Cn, Co = Capacitance = pF 1 10 100 ‘Vee ~ Drain to Source Voltage -V ‘SOURCE TO DRAIN DIODE FORWARD VOLTAGE eo - Diode Forward Current A, Pulsed 0 05 10 18 20 25 30 ‘Veo ~ Source to Drain Voltage ~ V ‘SWITCHING CHARACTERISTICS Veo = SOV Veeea = 10 Ree 100. tan, tr= Switching Time ~ ns tas, 7 10 100 1o—Drain Current A REVERSE RECOVERY TIME vs DYNAMIC INPUT CHARACTERISTICS BIObE FORWARO CURRENT 129 2 200 lo=30A 3 UE 3” Vin =80V ee : : ie 3 eof po es e ses 2 | So es é 2 2 a) a8 : 6 8 & , 0 A & Ves 0 3 ee a dit = 60 AN o 2030 4060 @0 7 16 700 (Qs Gate Charge nC le Diode Forward Current -NEC Reference ‘Application note name No. ‘Safe operating area of Powor MOS FET. TEA-1036 ‘Application ciroult using Power MOS FET. TEA1035 {Quality control of NEC semiconductors devices. TEL-1202 ‘Quality control guide of semiconductors devices. MEL-1202 ‘Assembly manual of semiconductors devices 161-1207 2SK1292NEC 2SK1292 [MEMO]NEC 2SK1292 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written Y ‘consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, impliad or otherwise, is granted under any patents, copyrights or other intellactual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ‘Application examples recommended by NEC Corporation. ‘Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industral robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anti systems, ete. wa 28