CHAPTER 12

Exercises

E12.1 The emitter current is given by the Shockley equation:

 v 
iE  I ES exp BE
  1
  VT
 
v 
For operation with iE  I ES , we have exp BE   1 , and we can write
 VT 
v 
iE  I ES exp BE 
 VT 
Solving for v BE , we have
 i   10 2 
v BE VT ln E   26 ln 14   718.4 mV
 I ES   10 
v BC  v BE  v CE  0.7184  5  4.2816 V
β 50
α   0.9804
β  1 51
iC  αiE  9.804 mA
i
iB  C  196.1 μA
β
α
E12.2 β
1α
α β
0.9 9
0.99 99
0.999 999

E12.3 iB  iE  iC  0.5 mA α  iC / iE  0.95 β  iC / iB  19

E12.4 The base current is given by Equation 12.8:

 v     v  
iB  (1  α)I ES exp BE   1  1.961  10 16 exp BE   1
  VT     0.026  
which can be plotted to obtain the input characteristic shown in Figure
12.6a. For the output characteristic, we have iC  βiB provided that

1
 v CE  approximately 0.2 V. Forv CE  0.2 V, iC falls rapidly to zero at
v CE  0. The output characteristics are shown in Figure 12.6b.

E12.5 The load lines for v in  0.8 V and - 0.8 V are shown:

As shown on the output load line, we find

VCE max  9 V,VCEQ  5 V, andVCE min  1.0 V.

2
E12.6 The load lines for the new values are shown:

As shown on the output load line, we have

VCE max  9.8 V,VCEQ  7 V, andVCE min  3.0 V.

3
E12.7 Refer to the characteristics shown in Figure 12.7 in the book. Select a
point in the active region of the output characteristics. For example, we
could choose the point defined by v CE  6 V and iC  2.5 mA at which we
find iB  50 μA. Then we have β  iC / iB  50. (For many transistors the
value found for β depends slightly on the point selected.)

E12.8 (a) Writing a KVL equation around the input loop we have the equation for
the input load lines: 0.8  v in (t )  8000iB  v BE  0 The load lines are
shown:

Then we write a KCL equation for the output circuit:

9  3000iC  v CE
The resulting load line is:

From these load lines we find

4
 I B max  48 μA, I BQ  24 μA, I Bmin  5 μA,
VCE max  1.8 V,VCEQ  5.3 V,VCE min  8.3 V
(b) Inspecting the load lines, we see that the maximum of vin corresponds
to IBmin which in turn corresponds to VCEmin. Because the maximum of vin
corresponds to minimum VCE, the amplifier is inverting. This may be a
little confusing because VCE takes on negative values, so the minimum
value has the largest magnitude.

E12.9 (a) Cutoff because we have VBE  0.5 V andVBC  VBE VCE  4.5 V which is
less than 0.5 V.
(b) Saturation because we have I C  βI B .
(c) Active because we have I B  0 andVCE  0.2 V.

E12.10 (a) In this case ( β  50) the BJT operates in the active region. Thus the
equivalent circuit is shown in Figure 12.18d. We have
V  0. 7
I B  CC  71.5 μA I C  βI B  3.575 mA
RB
VCE  VCC  RC I C  11.43 V
Because we have VCE  0.2, we are justified in assuming that the
transistor operates in the active region.

(b) In this case ( β  250) ,the BJT operates in the saturation region.
Thus the equivalent circuit is shown in Figure 12.18c. We have
V  0. 7 V  0. 2
VCE  0.2 V I B  CC  71.5 μA I C  CC  14.8 mA
RB RC

Because we have βI B  I C , we are justified in assuming that the

transistor operates in the saturation region.

E12.11 For the operating point to be in the middle of the load line, we want
V VCE
VCE  VCC / 2  10 V and I C  CC  2 mA . Then we have
RC
V  0.7
(a) I B  I C / β  20 μA RB  CC  965 k
IB
V  0. 7
(b) I B  I C / β  6.667 μA RB  CC  2.985 M
IB

5
E12.12 Notice that a pnp BJT appears in this circuit.

(a) For β  50, it turns out that the BJT operates in the active region.
20  0.7
IB   19.3 μA I C  βI B  0.965 mA
RB
VCE  RC I C  20  10.35 V

(b) For β  250, it turns out that the BJT operates in the saturation
region.
20  0.7 20  0.2
VCE  0.2 V I B   19.3 μA IC   1.98 mA
RB RC
Because we have βI B  I C , we are assured that the transistor operates
in the active region.

R2 VB VBE
E12.13 VB  VCC  5V IB 
R1  R2 RB  ( β  1)RE
I C  βI B VCE  VCC  RC I C  RE (I C  I B )

β IB (A) I C (mA) VCE (V)

100 32.01 3.201 8.566
300 12.86 3.858 7.271

For the larger values of R1 and R2 used in this Exercise, the ratio of the
collector currents for the two values of  is 1.205, whereas for the
smaller values of R1 and R2 used in Example 12.7, the ratio of the
collector currents for the two values of  is 1.0213. In general in the
four-resistor bias network smaller values for R1 and R2 lead to more
nearly constant collector currents with changes in .

1 R2
E12.14 RB   3.333 k VB  VCC  5V
1 R1  1 R2 R1  R2
VB VBE
I BQ   14.13 μA I CQ  βI BQ  4.239 mA
RB   β  1RE
βVT 30026 mV 
rπ    1840 
I CQ 4.238 mA

6
 1 βRL 
RL    666.7 Ω Av    108.7
1 RL  1 RC rπ
R  1
Avoc  L  163.0 Z in   1186 
r 1 R1  1 R2  1 rπ
Z
Ai  Av in  64.43 G  Av Ai  7004
RL
Z o  RC  1 k
Z in
v o  Avv in  Avv s  76.46 sin(ωt )
Z in  Rs

E12.15 First, we determine the bias point:

1 R2
RB   50.00 k VB  VCC  10 V
1 R1  1 R2 R1  R2
VB VBE
I BQ   14.26 μA I CQ  βI BQ  4.279 mA
RB   β  1RE
Now we can compute rπ and the ac performance.
βVT 30026 mV  1
rπ    1823  RL   666.7 Ω
I CQ 4.279 mA 1 RL  1 RE
RL  β  1 RE   1
Av   0.9910 Avoc   0.9970
rπ   β  1RL r    1RE
1 Z
Z in   40.10 kΩ Ai  Av in  39.74
1 RB  1 [rπ   β  1RL] RL
1
G  Av Ai  39.38 Rs   8.333 kΩ
1 RB  1 Rs
1
Zo 
 β  1  1  33.18 
R  r
s π
RE

Problems

P12.6 iE  iC  iB
 16  0.4  16.4 mA
i 16
 C   0.975
iE 16.4
iC 16
   40
iB 0.4

7
P12.7 The emitter current is given by the Shockley equation:
 v  
iE  I ES exp BE   1
  VT  
v 
For operation with iE  I ES , we have exp BE   1 , and we can write:
 VT 
v 
iE  I ES exp BE 
 VT 
Solving for v BE , we have
 i   10 2 
VRE  VT ln  E   26ln  13   640.51mV
I   20 
 ES 
VBC  VRE  VCE  0.640  10.0  9.359
200
  0.995

  1 201
iC  iE  9.95mA
iC
iB   49.75 A


P12.16 We have:
 v  
iE 1  I ES 1 exp BE   1
  VT  
 v  
iE 2  I ES 2 exp BE   1
  VT  
Adding the respective sides of these equations, we have:
 v  
iEeq  iE 1  iE 2  I ES 1  I ES 2 exp BE   1
  VT  
Thus, we have:
IESeq  IES1  IES 2  4  1013 A

Also, we have iB 1  iB 2 , and we can write:

iCeq iC 1  iC 2 200iB1  200iB2
eq     200
iBeq iB1  iB2 iB1  iB 2

P12.18 We select a point on the output characteristics in the active region and
compute   iC / iB . For example on the curve for iB  20 μA, we have

8
 iC  8 mA in the active region. Thus,   (8 mA)/(20 A)  400 . Then, we
have α  β /( β  1)  0.9975.

P12.19 At 150°C and iB  0.1 mA, the base-to-emitter voltage is approximately:

VBE  0.7  0.002(150  30)  0.46V

P12.22 Following the approach of Example 12.2, we construct the load lines
shown. We estimate that VCE max  18.4 V,VCEQ  15.6 V, and VCE min  12 V .
Thus, the voltage gain magnitude is Av  18.4  12 0.4  16

9
P12.29

10
P12.30 (a) and (b) The characteristics and the load line are:

(c) We are given iB (t )  is (t )  10  5 sin(2000t ) . From which we

determine that I B min  5 μA, I BQ  10 μA, and I B max  15 μA. Then at the
intersections of the load line with the respective characteristics, we
determine that I C min  0.5 mA, I CQ  1.0 mA, and I C max  1.5 mA and that
VCE min  15 V,VCEQ  10 V, VCE max  5 V.

(d) The sketches of vCE(t) are:

(e) We are given iB (t )  is (t )  20  5 sin(2000t ) . From which we

determine that I B min  15 μA, I BQ  20 μA, and I B max  25 μA. Then at the
intersections of the load line with the respective characteristics, we
determine that I C min  1.5 mA, I CQ  2.0 mA, and I C max  2.0 mA and that
VCE min  5 V,VCEQ  0.2 V,VCE max  0.2 V. A sketch of vCE(t) is shown
above.

11
P12.35 In the active region, the base-collector junction is reverse biased and
the base-emitter junction is forward biased.

In the saturation region, both junctions are forward biased.

Thus, we have:
IC  1
4.3  RB  RE I
  C

For β  200, we require IC  4 mA. Furthermore, for β  300, we require

IC  5 mA. Thus, we have two equations:
4.3  RB (0.02  10 3 )  RE (4.02  10 3 )
4.3  RB (0.01667  10 3 )  RE (5.017  10 3 )

Solving, we find:
RB  128.6k and RE  429 

P12.41 1. Assume operation in saturation, cutoff, or active region.

2. Use the corresponding equivalent circuit to solve for currents and

voltages.

3. Check to see if the results are consistent with the assumption made in
step 1. If so, the circuit is solved. If not, repeat with a different
assumption.

P12.42 The results are given in the table:

Region of IC VCE
Circuit β operation (mA) (volts)
(a) 100 active 1.93 10.9
(a) 300 saturation 4.21 0.2
(b) 100 active 1.47 5.00
(b) 300 saturation 2.18 0.2
(c) 100 cutoff 0 15
(c) 300 cutoff 0 15
(d) 100 active 6.5 8.5
(d) 300 saturation 14.8 0.2

12
P12.46 The BJT operates in the active region. We can write the voltage
equation:
5  RB I B  0.7  RE I E
However, we can substitute using the relations:
β 1 I
IE  I C and I B  C
β β
Thus, we have:
I β 1
4.3  RB C  RE IC
β β
For β  100, we require I C  4 mA. Furthermore, for β  300, we require
I C  5 mA. Thus, we have two equations:
4.3  RB 0.04  10 3   RE 4.04  10 3 
4.3  RB 0.01667  10 3   RE 5.017  10 3 
Solving, we find:
RB  31.5 k and RE  753 

P12.48 From Equations 12.20 through 12.23, we have:

VB VBE
I C  βI B  β
RB   β  1RE
1
RB 
1 R1  1 R2
R2
VB  VCC
R1  R2

Maximum I C occurs for β  βmax  200, RE  RE min  0.95  4.7 k 

4465 , R1  R1 min  0.95  100 k  95 k, and R2  R2 max  1.05  47 k 
49.35 k. With these values, we calculate:
RB  32.48 k VB  5.128 V I C max  0.952 mA

Minimum I C occurs for β  βmin  50, RE  RE max  1.05  4.7 k 

4.935 k, R1  R1 max  1.05  100 k  105 k, and R2  R2 min 
0.95  47 k  44.65 k. With these values, we calculate:
RB  31.33 k VB  4.475 V I C min  0.6667 mA

13
P12.55 We use the same approach as in Section 12.7. We can write

iB (t )  10 5vBE
2
(t )

I BQ  ib (t )  10 5 [VBEQ  v be (t )] 2

I BQ  ib (t )  10 5VBEQ
2
 2  10 5VBEQv be (t )  10 5v be
2
(t ) (1)

However for the Q-point, we have IBQ  10  5VBEQ

2
. Therefore, the first
term on each side of Equation (1) can be canceled. Furthermore, the last
term on the right hand side of Equation (1) is negligible for small signals
[i.e., v be (t ) much less than VBEQ at all times]. Thus, Equation (1) becomes
ib (t )  2  10 5VBEQv be (t )
We have defined

v be (t )
rπ 
ib (t )

and we have
1 5  10 4 5  10 4 1581
rπ    
2  10 VBEQ
5
10 I BQ
5
10 I CQ / 100
5 I CQ

For ICQ  2mA, we obtain r  35.35k. .

P12.62 The solution is similar to that of Problem P12.63. The results are:

High impedance amplifier Low impedance amplifier

(Problem 12.62) (Problem 12.63)
ICQ 0.0393 mA 3.93 mA
rπ 66.2 kΩ 662 Ω
Av -75.5 -75.5
Avoc -151 -151
Z in 54.8 kΩ 548 Ω
Ai -41.4 -41.4
G 3124 3124
Zo 100 kΩ 1 kΩ

14
P12.67 The dc circuit is:

The bias point calculations are:

1
RB   5 k
1 R1  1 R2
R2
VB  VCC  7. 5 V
R1  R2
VB VBE
I BQ   64.1 μA
RB   β  1RE
I CQ  βI BQ  6.41 mA
Now we can compute rπ and the ac performance.
βVT 10026 mV 
rπ    405 
I CQ 6.41 mA
1
RL   333 Ω
1 RL  1 RE
RL  β  1
Av   0.98
r   β  1R 
π L

RE   1
Avoc   0.996
r    1RE
1
Z in   4.36 kΩ
1 RB  1 rπ   β  1RL 
Z
Ai  Av in  8.61 G  Av Ai  8.51
RL
1 1
Zo  in which Rs   833 Ω
 β  1  1 1 RB  1 Rs
Rs  rπ RE
Z o  12.1 

15
 Practice Test

T12.1 a. 3, b. 2, c. 5, d. 7 and 1 (either order), e. 10, f. 7, g. 1, h. 7, i. 15, j.

12, k. 19.

T12.2 First, we construct the load lines on the input characteristics for vin  0,
0.2 V, and +0.2 V:

At the intersections of the characteristic with the load lines, we find the
minimum, Q-point, and maximum values of the base current as shown.
Then, we construct the load line on the collector characteristics:

16
 Interpolating between collector characteristics when necessary, we find
VCEmin  0.2 V,VCEQ  5.0 V, andVCEmax  9.2 V.

I CQ 1. 0
T12.3    0.9615 I BQ  I EQ  I CQ  0.04 mA
I EQ 1.04
I CQ  VT 25  0.026
    25 r    650 
I BQ 1 I CQ 0.001
The small-signal equivalent circuit is shown in Figure 12.26.

17
T12.4 (a) It turns out that, in this case (   50), the BJT operates in the active
region. The equivalent circuit is:

in which we have VCC  9 V, RC  4.7 k, and RB  470 k.

We have
V  0. 7
I B  CC  17.66 A I C  I B  0.8830 mA
RB
VCE  VCC  RC I C  4.850 V
Because we have VCE  0.2, we are justified in assuming that the
transistor operates in the active region.
(b) In this case (   250), the BJT operates in the saturation region.
The equivalent circuit is:

18
 We have

VCC  0.7 V  0.2

VCE  0.2 V I B   17.66 A I C  CC  1.872 mA
RB RC

Because we have βI B  I C , we are justified in assuming that the

transistor operates in the saturation region.

T12.5 We need to replace VCC by a short circuit to ground, the coupling

capacitances with short circuits, and the BJT with its equivalent circuit.
The result is:

T12.6 This problem is similar to parts of Example 12.8.

VT 12026 mV 
r    780 
I CQ 4 mA
1
RL   1.579 k
1 RL  1 RC
R 
Av   L  243.0
r
1
RB   31.97 k
1 R1  1 R2
1
Z in   761.4 
1 RB  1 r

19