Quiz 6 Nanoelectronic Devices Monday, 04-05-2019 Total Marks: 10 Time Allowed: 10 Minutes Student Name: So ition Student ID: Problem 1: (5 Marks) LT a ( I ,) in \2-%) Find the value of Ty I[Fo measured and VS fit (30 nm Si ETSOI MOSFET) aor (series resistance included) °% 02 0.4 0.6 0.8 1 ‘as () Lear Bo . OFf0 T vatProblem 2: The experimental data Nano transistor quantitatively shows that Transmission is Tjjy < Tsar at high drain bias. This contradicts the general conceptualization of scattering phenomena. ‘What explain this experimental behavior? Elaborate your answer using appropriate energy band diagrams and mathematical relation. (5 Marks) Ge rexel TT is olesclibool as T- ko Roth 7 Sn Case of Dinens Beqiou at lows biases of olYan, L exuuals tle channel Length Quo Coétespones fo entre Gabxo Cons Ht whereas in saterodion only tle Small botttenesK 2is e flectue in the Léansmission coud euki te Chonnes Length 1S net (wr4idered . whee 24 Ler T,. . ho (aera AG) un =—— ot Kor bey Ao +h