LINKÖPING UNIVERSITY Examination in TSEK03 RFIC

Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering

ANSWERS
-
TSEK03
RADIO FREQUENCY INTEGRATED CIRCUITS

Date: 2013-06-05
Time: 14-18
Location: TER3
Aids: Calculator, Dictionary
Teachers: Behzad Mesgarzadeh (5719)
Amin Ojani (2716)

12 points are required to pass.

12-16 : 3
16-20 : 4
20-24 : 5
Please start each new problem at the top of a page!
Only use one side of each paper!
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 2(9)

1)

There are three flicker noise sources as shown below.

Vdd

M3
Vn3
Vout

M1
Vn1 Vin
M2
Vn2

To determine the output noise we short the input to ground (M2 has no effect). Then:

Since and , the gain of this circuit is:

Then we can determine the input referred noise as:

Repacing the values of and gives:

2)

(a)

Input Impedance:
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 3(9)

I x + g mVgs = 0
V x = Vs
Vgs = Vg − Vs = −Vs = −Vx
I x − g mVx = 0
Vx 1
Z in = =
I x gm

(b)

Noise Factor:
There are totally three noisy components to be considered which are the source
resistance Rs and NMOS transistors M1 and M2. So the noise factor of the LNA is:
V 2 no, Rs + V 2 no, M 1 + V 2 no, M 2
Noise Factor =
V 2 no, Rs

Calculation of V 2 no, Rs :
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 4(9)

Vgs = Vg − Vs = −Vs
Vn, Rs − Vs
= − g mVgs = g mVs
Rs
1
Vs = Vn , Rs ( )............................(1)
g m Rs + 1
− Vno, Rs
g mVgs = − g mVs = ....................(2)
RL
Apply (1) into (2) gives:
g R
Vno, Rs = m L Vn , Rs
1+ g m Rs
V 2 n, Rs = 4 KTRs
2 2
 g m1 RL   g R 
V 2
=  × V 2 n ,Rs =  m1 L  4 KTRs
no , Rs
 1 + g m Rs   1 + g m Rs 
 1   1 

Calculation of V 2 no, M 1 :

gd 0 ≈ gm
I 2 n ,M1 = 4 KTγg m1
Vno,M1 = − I out RL ..............................................(1)
I no,M1 = g m1Vgs + I n,M1 = − g m1Vs + I n,M1 ...............(2)
Vs − Vno,M1
= ....................................................(3)
Rs RL
Applying (3) into (2) gives:
− Rs
I no, M 1 = − g m1 Vno, M 1 + I n, M 1 .......................(4)
RL
Applying (4) into (1) gives:
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 5(9)

 R 
Vno,M1 =  g m1 s Vno,M1 + I n,M1  RL
 RL 
 − RL 
Vno,M1 =   I n ,M
 1 + g m Rs  1
 1 
2 2
 − RL  2  
V 2
=  I n,M1 =  − RL  4 KTγg m
no ,M 1
 1 + g m Rs   1 + g m Rs  1
 1   1 

Calculation of V 2 no , M 2 :

gd 0 ≈ gm
I 2 n ,M 2 = 4 KTγg m2
Vno,M 2 = − I no,M 2 RL ................................................(5)
Vs
I no,M 2 = + I n ,M 2 ...............................................(6)
Rs
− Vno,M 2
= g m1Vgs = − g m1Vs
RL
1
Vs = Vno,M 2 .............................................(7)
g m1 RL
Applying (7) into (6) gives:
1
I no, M 2 = Vno, M 2 + I n , M 2 ...........................(8)
g m1 RL Rs
Applying (8) into (5) gives:
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 6(9)

 1 
Vn ,M 2 = − RL Vn ,M 2 + I n ,M 2 
 g m1 RL Rs 
 
 − g m1 RL Rs 
Vn ,M 2 =  I
 g m Rs + 1  n ,M 2
 1 
2 2
 − g m1 RL Rs  2  − g m1 RL Rs 
V 2
=  I n,M 2 =   4 KTγg m
n,M 2
 g m Rs + 1   g m Rs + 1  2
 1   1 

Total Noise Factor of the LNA:

V 2 no,Rs + V 2 no,M1 + V 2 no,M 2 V 2 no,M1 V 2 no,M 2

F= =1+ + =
V 2 no,Rs V 2 no, Rs V 2 no, Rs
2 2
 − RL   − g m1 RL Rs 
  4 KTγg m   4 KTγg m
 1 + g m Rs  1  1 + g m Rs  2
γ
1+  1  +  1  =1+ + γg m2 Rs
2 2
 g m1 RL   g m1 RL  g m1 Rs
  4 KTRs   4 KTRs
 1 + g m Rs   1 + g m Rs 
 1   1 

3)

a)

1 2 2 2
iLO (t ) = + cos ωLO (t ) − cos 3ωLO (t ) + cos 5ωLO (t ) − ...
2 π 3π 5π

iRF (t ) = I bias + I RF cos ωRF (t )

iIF (t ) = iLO (t ) × iRF (t ) = ( + cos ωLO (t ) − ...) × (I bias + I RF cos ωRF (t ) )

1 2
2 π
= bias + bias cos ωLO (t ) + RF cos ω RF (t ) + RF [cos(ωRF − ωLO )(t ) + cos(ωRF + ωLO )(t )]
I 2I I I
2 π 2 π

DC LO feedthrough RF feedthrough IF HF ( to be filtered )

LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 7(9)

b)

I RF
v IF (t ) = RD ⋅ cos(ω RF − ω LO )t
π
i RF (t ) I cos ω RF t
v RF (t ) = = RF ⇒
g m2 g m2
1 + g m 2 Ron1 1 + g m 2 Ron1

I RF
RD ⋅ cos(ω RF − ω LO )t
v (t )
Gc = IF = π =
1 g m2
RD
v RF (t ) I RF cos ω RF t π 1 + g m 2 Ron1
g m2
1 + g m 2 Ron1

c)

M1 is an ideal switch with on resistance equal to zero => no noise contribution

Noise sources are M2, RS, and RD:

= RD × i 2 n , out = 4 KTγg m 2 RD
2 2
V 2 n, out M2 M2

V 2 n, out RD = 4 KTRD

V 2 n, out RS = 4 KTRS ( g m 2 RD ) 2
Since a perfect switch driven by an ideal square wave generates odd harmonics, the gain
for noise and signal is different.
2
Y (ω ) = ∑ X (ω + kω0 ) .
k kπ

Gain for noise added by switching: Y (ω ) = ∑ a k = 1

2

4
Gain for signal added by switching (only fundamental): a1 =
2

π2

To calculate the noise figure:

SNRin S N S N 1 N out
F= = in in = in ⋅ out = ⋅
SNRout Sout N out Sout N in Gc N in
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 8(9)

1 V 2 n, out + V 2 n , out + V 2 n , out

F= ⋅
RS M2 RD
2 2
Gc V n , RS

π2 4 KTRS ( g m 2 RD ) 2 + 4 KTRD + 4 KTγg m 2 RD

2
= ⋅
( g m 2 RD ) 2 4 KTRS

 1 γ 
= π 2 1 + 2
+ 
 ( g m 2 ) RD RS g m 2 RS 

4)
ω0 LS 2π (2.4 × 109 )(5 × 10 −9 )
(a) RS = = = 7.54 Ω
Q 10
R p = (1 + Q 2 )2 RS = 1.523 kΩ
2
Rneg = −
gm
For oscillation R p = Rneg
2
1.523 × 103 = and, g m = 1.313 mA/V
gm
W I
g m = 2 µ n Cox I D and, I D = bias , therefore
L 2
W g m2
= = 7.84
L µ n Cox I bias

(b)

 1 
The parallel inductance is calculated as LP = 2 LS 1 + 2  . However, since the Q is
 Q 
relatively large in this example, Lp can be approximated by LP ≈ 2 LS . Therefore,
1
f0 ≈
2π 2 LS C
1
For oscillation frequency of 2.4 GHz, C = = 0.440 pF
4π (2 LS ) f 02 2

1
while for oscillation frequency of 2.5 GHz, C = 2 = 0.405 pF
4π (2 LS ) f 02
LINKÖPING UNIVERSITY Examination in TSEK03 RFIC
Behzad Mesgarzadeh
Amin Ojani
Electronic Devices, Department of Electrical Engineering Page 9(9)

(c)
2 Ladd LS (5 × 10 −9 )(10 × 10 −9 )
Leq = = = 3.33 nH
Ladd + 2 LS 5 × 10 −9 + 10 × 10 −9
1 1
f0 = = = 4.16 GHz
2π Leq C 2π (3.33 × 10 −9 )0.44 × 10 −12

4.16 − 2.4
% change = × 100 = 73.3 % increase
2. 4

5)

(a) Type I:

(b) For slow variations ( ) and . Then output phase tracks the input.