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    Transistor SPAN-P3HT

    Uploaded by

    I Cruz
    1. The document shows graphs of current (Ids and Igs) versus voltage (Vgs and Vds) for a transistor made of poly(3-hexylthiophene) (P3HT) between gold source and drain electrodes on a silicon substrate with a silicon dioxide insulating layer. 2. The graphs demonstrate the transistor's output and transfer characteristics, showing how the drain-source current changes with varying gate-source and drain-source voltages. 3. The data presented characterizes the electrical properties and performance of this organic thin-film transistor using P3HT as the semiconducting layer.

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    Transistor SPAN-P3HT

    Uploaded by

    I Cruz
    26 views13 pages
    1. The document shows graphs of current (Ids and Igs) versus voltage (Vgs and Vds) for a transistor made of poly(3-hexylthiophene) (P3HT) between gold source and drain electrodes on a silicon substrate with a silicon dioxide insulating layer. 2. The graphs demonstrate the transistor's output and transfer characteristics, showing how the drain-source current changes with varying gate-source and drain-source voltages. 3. The data presented characterizes the electrical properties and performance of this organic thin-film transistor using P3HT as the semiconducting layer.

    Original Description:

    Output and transfer characteristics for transistors based on SPAN-P3HT

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    1. The document shows graphs of current (Ids and Igs) versus voltage (Vgs and Vds) for a transistor made of poly(3-hexylthiophene) (P3HT) between gold source and drain electrodes on a silicon substrate with a silicon dioxide insulating layer. 2. The graphs demonstrate the transistor's output and transfer characteristics, showing how the drain-source current changes with varying gate-source and drain-source voltages. 3. The data presented characterizes the electrical properties and performance of this organic thin-film transistor using P3HT as the semiconducting layer.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    26 views13 pages

    Transistor SPAN-P3HT

    Uploaded by

    I Cruz
    1. The document shows graphs of current (Ids and Igs) versus voltage (Vgs and Vds) for a transistor made of poly(3-hexylthiophene) (P3HT) between gold source and drain electrodes on a silicon substrate with a silicon dioxide insulating layer. 2. The graphs demonstrate the transistor's output and transfer characteristics, showing how the drain-source current changes with varying gate-source and drain-source voltages. 3. The data presented characterizes the electrical properties and performance of this organic thin-film transistor using P3HT as the semiconducting layer.

    Copyright:

    © All Rights Reserved
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    of 13

    1

    Transistor SPAN + P3HT


    2 Ids (A)
    400,0n Igs (A)
    Ids
    4,0n 0,0
    300,0n Igs
    -50,0n
    200,0n 2,0n
    -100,0n
    100,0n 0,0
    Ids (A)

    -150,0n

    Igs (A)

    Ids (A)
    0,0
    -100,0n
    -2,0n -200,0n
    -15 V
    -250,0n
    -200,0n -4,0n
    -300,0n
    -300,0n -6,0n
    -350,0n
    -400,0n -20 -15 -10 -5 0 5 10 15 20
    -20 -10 0 10 20
    Vgs (V)
    V (V)

    500,0n
    400,0n
    300,0n
    200,0n
    100,0n
    Ids (A)

    0,0
    -100,0n
    -200,0n
    -300,0n
    S D -400,0n
    Igs
    Au Au Ids
    P3HT -15 -10 -5 0 5 10 15 20
    OSi
    G
    Si
    Vds (V)
    P3HT
    Ids (A)
    3 500,0n 100,0n Igs (A)
    Ids
    400,0n Igs
    0,0
    0,0
    300,0n

    Igs (A)
    -100,0n
    200,0n
    -40V
    Ids (A)

    Ids (A)
    100,0n -30,0n -200,0n

    0,0
    -300,0n
    -100,0n
    -60,0n -400,0n
    -200,0n
    -40 -20 0 20 40 -500,0n
    -40 -20 0
    V (V)
    Vgs (V)
    200,0n
    Igs
    Ids
    100,0n

    0,0

    -100,0n
    Ids (A)

    -200,0n

    -300,0n

    -400,0n
    S D
    Au Au -40 -30 -20 -10 0
    P3HT Vds (V)
    OSi
    Si
    G
    Ids (A)
    4 40,0n Igs (A)

    600,0n
    0,0
    20,0n
    400,0n

    Igs (A)
    0,0
    -200,0n
    200,0n
    Ids (A)

    Ids (A)
    -20,0n
    0,0 -400,0n
    -40,0n
    -200,0n
    -60,0n -600,0n
    -400,0n
    -50 -40 -30 -20 -10 0 10 20 30 40 50
    -40 -30 -20 -10 0 10
    V (V)
    Vgs (V)

    Igs
    200,0n Ids

    0,0
    Ids (A)

    -200,0n

    -400,0n

    -600,0n
    S D
    Au Au -40 -30 -20 -10 0
    P3HT
    OSi Vds (V)
    Si
    G
    Ids (A)
    5 100,0n 200,0n Igs (A)
    1,5µ Ids
    Igs
    0,0
    1,0µ

    Igs (A)
    0,0
    -200,0n
    500,0n
    -400,0n

    Ids (A)
    -100,0n
    I (A)

    0,0 -600,0n

    -500,0n -200,0n -800,0n

    -1,0µ
    -1,0µ
    -300,0n
    -30 0 30 -1,2µ
    -40 -20 0
    V (V)
    Vgs (V)
    Igs
    Ids

    600,0n

    400,0n

    200,0n

    0,0
    Ids

    -200,0n

    -400,0n

    S D -600,0n
    Au Au
    P3HT -800,0n
    OSi -40 -30 -20 -10 0
    Si Vds
    G
    6 10,0µ
    Ids
    1,0µ Ids (A)
    200,0µ Igs (A)
    Igs
    0,0
    100,0µ
    -10,0µ
    0,0 -15 V

    Ids (A)
    0,0
    -20,0µ

    Igs (A)
    Ids (A)

    -100,0µ
    -30,0µ
    -1,0µ -200,0µ
    -40,0µ -20 -10 0 10 20
    Vgs (V)

    -50,0µ Ids (A)


    Igs (A)

    -60,0µ -2,0µ 10,0µ


    -20 -10 0 10 20
    V (V) 15 V

    Ids (A)
    0,0

    -10,0µ
    100,0µ
    80,0µ -20 -10 0
    Vgs (V)
    10 20

    60,0µ
    40,0µ
    I ds (A)

    20,0µ
    0,0
    -20,0µ S D
    -40,0µ Au Au
    SPAN
    -60,0µ Igs OSi
    -80,0µ Ids Si
    -100,0µ G
    -18-16-14-12-10-8 -6 -4 -2 0 2 4 6 8 1012141618 SPAN 45 um
    V gs (V)
    7 40,0n Ids
    8,0n Ids (A)
    Igs (A)

    Igs
    6,0n
    30,0n
    4,0n 0,0
    20,0n
    2,0n
    10,0n 0,0 -15 V

    Ids (A)
    Igs (A)
    -20,0n
    Ids (A)

    0,0 -2,0n
    -10,0n -4,0n
    -40,0n
    -20,0n -6,0n
    -30,0n -8,0n
    -20 -10 0 10 20
    -40,0n -10,0n Vgs (V)

    -20 -15 -10 -5 0 5 10 15 20


    Ids (A)
    V (V) Igs (A)

    140,0n

    40,0n 70,0n
    15 V

    Ids (A)
    20,0n 0,0

    0,0 -20 -10 0 10 20


    Vgs (V)
    Ids (A)

    -20,0n
    S D
    -40,0n
    Au Au
    Igs SPAN
    -60,0n Ids OSi
    Si
    -15 -10 -5 0 5 10 15 20 G
    Vds (V)
    SPAN 100 um
    Ids (A)
    8 Igs (A)
    70,0n
    150,0n
    30,0n
    100,0n 0,0
    -15 V

    Ids (A)
    Igs (A)
    50,0n 0,0 -70,0n
    Ids (A)

    0,0
    -140,0n
    -30,0n -20 -10 0 10 20
    -50,0n Vgs (V)
    Ids (A)
    Igs (A)
    200,0n
    -100,0n -60,0n
    -20 -15 -10 -5 0 5 10 15 20
    100,0n
    V (V)
    15 V

    Ids (A)
    0,0

    200,0n -100,0n

    Igs
    150,0n Ids -20 -10 0 10 20
    Vgs (V)

    100,0n

    50,0n
    Ids (A)

    0,0

    -50,0n S D
    -100,0n
    Au Au
    SPAN
    -150,0n OSi
    -15 -10 -5 0 5 10 15 20 Si
    Vds (V) G
    Ids (A)
    9 Igs (A)

    Ids 0,0
    4,0µ Igs
    7,0n

    2,0µ -15 V

    Ids (A)
    -2,0µ
    0,0

    Igs (A)
    Ids (A)
    0,0

    -4,0µ
    -2,0µ
    -7,0n -20 -10 0 10 20
    Vgs (V)
    -4,0µ
    Ids (A)
    -20 -10 0 10 20 6,0µ Igs (A)

    V (V)
    3,0µ
    15 V

    Ids (A)
    0,0
    4,0µ
    3,0µ -3,0µ
    -20 -10 0 10 20
    Vgs (V)
    2,0µ
    1,0µ
    0,0
    Ids (A)

    S D
    -1,0µ Au Au
    -2,0µ P3HT
    -3,0µ SPAN
    Igs OSi
    -4,0µ
    Ids Si
    -5,0µ
    -15 -10 -5 0 5 10 15 20
    G
    Vds (V) SPAN + P3HT 45 um
    10 10,0µ 20,0n
    Ids (A)
    Igs (A)
    Ids
    8,0µ 0,0
    Igs
    6,0µ
    4,0µ 0,0 -3,0µ

    Igs (A)
    -15 V

    Ids (A)
    Ids (A) 2,0µ
    0,0 -6,0µ

    -2,0µ -20,0n
    -4,0µ -9,0µ
    -20 -10 0 10 20
    -6,0µ Vgs (V) Ids (A)
    -40,0n 9,0µ Igs (A)
    -8,0µ
    8,0µ
    -10,0µ 7,0µ
    -15 -10 -5 0 5 10 15
    6,0µ
    V (V) 5,0µ

    15 V

    Ids (A)
    4,0µ
    3,0µ
    2,0µ
    10,0µ 1,0µ
    0,0
    8,0µ -20 -10 0 10 20
    Vgs (V)

    6,0µ
    4,0µ
    2,0µ
    Ids (A)

    0,0
    -2,0µ
    -4,0µ S D
    -6,0µ Au Au
    Igs
    P3HT
    -8,0µ
    Ids SPAN
    -10,0µ
    -15 -10 -5 0 5 10 15 20 OSi
    Si
    Vds (V)
    G
    11 200,0n
    Ids 8,0n Ids (A)
    Igs (A)
    Igs 6,0n
    0,0
    4,0n
    100,0n -50,0n
    2,0n

    -15 V
    0,0 -100,0n

    Igs (A)
    Ids (A)

    Ids (A)
    0,0
    -2,0n -150,0n

    -4,0n -200,0n
    -100,0n
    -6,0n -250,0n
    -8,0n -20 -10 0 10 20
    -200,0n
    -10,0n Vgs (V)
    Ids (A)
    -20 -15 -10 -5 0 5 10 15 20 Igs (A)

    250,0n
    V (V)
    200,0n

    150,0n
    15 V

    Ids (A)
    300,0n 100,0n

    50,0n

    200,0n 0,0

    -20 -10 0 10 20
    Vgs (V)
    100,0n

    0,0
    Ids (A)

    S D
    -100,0n Au Au
    P3HT
    -200,0n
    Igs
    SPAN
    Ids OSi
    -300,0n Si
    -15 -10 -5 0 5 10 15 20 G
    Vds (V) SPAN + P3HT 100 um
    12
    Ids (A)
    Igs (A)
    Ids 8,0n
    200,0n 0,0
    Igs 6,0n
    -50,0n
    100,0n
    4,0n
    2,0n -100,0n
    -15 V

    Igs (A)

    Ids (A)
    0,0
    Ids (A)

    -150,0n
    0,0
    -2,0n -200,0n
    -4,0n
    -100,0n -250,0n
    -6,0n
    -20 -10 0 10 20
    -8,0n Vgs (V)
    -200,0n
    -10,0n Ids (A)
    Igs (A)
    -20 -10 0 10 20
    250,0n
    V (V)
    200,0n

    150,0n

    Ids (A)
    100,0n
    15 V
    50,0n
    300,0n
    0,0

    -20 -10 0 10 20
    200,0n Vgs (V)

    100,0n

    0,0
    Ids (A)

    -100,0n S D
    Au Au
    -200,0n P3HT
    Igs
    -300,0n Ids SPAN
    OSi
    -15 -10 -5 0 5 10 15 20 Si
    Vds (V) G
    13
    Ids (A)
    100,0n Igs (A)
    Ids
    600,0n 100,0n

    Igs (A)
    Igs
    0,0 0,0
    400,0n
    -100,0n

    Ids (A)
    Ids (A) 200,0n -100,0n -200,0n
    -40 V
    -300,0n
    0,0 -200,0n -400,0n

    -500,0n
    -200,0n -40 -20 0 20 40
    -300,0n Vgs (V)

    -400,0n Ids (A)


    Igs (A)
    -400,0n 1,5µ
    -40 -20 0 20 40
    1,0µ
    V (V)
    500,0n
    40 V

    Ids (A)
    Igs
    0,0
    Ids
    -500,0n
    1,5µ
    -1,0µ
    -30 0 30
    1,0µ Vgs (V)

    500,0n
    Ids (A)

    0,0

    -500,0n S D
    Au Au
    -1,0µ P3HT
    -1,5µ SPAN
    OSi
    -40 -20 0 20 40 Si
    Vds (V)
    G

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