KST5088/5089

KST5088/5089

Low Noise Transistor 3

SOT-23
1
1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: KST5088 35 V
: KST5089 30 V
VCEO Collector-Emitter Voltage
: KST5088 30 V
: KST5089 25 V
VEBO Emitter-Base Voltage 4.5 V
IC Collector Current 50 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0
: KST5088 35 V
: KST5089 30 V
BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0
: KST5088 30 V
: KST5089 25 V
ICBO Collector Cut-off Current
: KST5088 VCB=20V, IE=0 50 nA
: KST5089 VCB=15V, IE=0 50 nA
IEBO Emitter Cut-off Current VEB=3V, IC=0 50 nA
hFE DC Current Gain
: KST5088 VCE=5V, IC=100µA 300 900
: KST5089 400 1,200
: KST5088 VCE=5V, IC=1mA 350
: KST5089 450
: KST5088 VCE=5V, IC=10mA 300
: KST5089 400
VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.5 V
VBE(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.8 V
fT Current Gain-Bandwidth Product VCE=5V, IC=500µA, f=20MHz 50 MHz
Cob Output Capacitance VCB=5V, IE=0, f=100KHz 4 pF
NF Noise Figure
: KST5088 IC=100µA, VCE=5V 3 dB
: KST5089 RS=10KΩ, f=10Hz to 15.7KHz 2 dB

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KST5088/5089
Marking Code
Type KST5088 KST5089
Mark 1Q 1R

Marking

1Q

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KST5088/5089
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 10

VCE = 5V
IC = 10 IB
hFE, DC CURRENT GAIN

V BE(sat)
1

100

0.1
VCE (sat)

10 0.01
0.1 1 10 100 0.1 1 10 100

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

10 1000

Cib f = 1MHz
IE = 0 VCE = 5V
Cob f=100KHz
Cib[pF] Cob[pF], CAPACITANCE

IE = 0
100
Cib
Cob
1

10

1
0.1 0.1 1 10 100
1 10 100

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product

Collector-Base Capaciance

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KST5088/5089
Package Dimensions

SOT-23

0.20 MIN
0.45~0.60
0.40 ±0.03

±0.10

±0.10
1.30

2.40
0.03~0.10

0.38 REF

0.40 ±0.03 +0.05

0.12 –0.023

0.96~1.14
2.90 ±0.10
0.97REF

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1

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