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OB2279 On Bright PDF
OB2279 On Bright PDF
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large signal stability and reduces the possible sub- o Over Temperature Protection(OTP) – Auto
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harmonic oscillation at high PWM duty cycle output. recovery or Latch Shutdown
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Leading-edge blanking on current sense input o Over Load Protection. (OLP) – Auto recovery
removes the signal glitch due to snubber circuit diode or Latch Shutdown
reverse recovery and greatly reduces the external o VDD Under Voltage Lockout with Hysteresis
component count and system cost in the design. (UVLO)
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OB2279 offers comprehensive protection coverage o Gate Output Voltage Clamp (16.5V)
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including Cycle-by-Cycle current limiting(OCP), o Built-in OCP Compensation to Achieve
VDD Under Voltage Lockout(UVLO), VDD Over
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TYPICAL APPLICATION
DIP8 90
SOP8 150
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VDD Clamp Voltage (Vclamp) 35 V
VDD Clamp Continuous 10 mA
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Current
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Ordering Information VIN / VDD Input Voltage -0.3V to Vclamp
Part Number Description FB Input Voltage -0.3 to 7V
OB2279AP-V DIP8, tube package, V Sense Input Voltage -0.3 to 7V
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version with OVP Latch
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RT Input Voltage -0.3 to 7V
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Tstg
OB2279CP-V SOP8, tube package, V Lead Temperature (Soldering, 260 oC
version with OVP latch 10 seconds)
OB2279CPA-V SOP8, taping package, V
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OB2279CP-T SOP8, tube package, T stress ratings only, functional operation of the device at these or
any other conditions beyond those indicated under
version with OVP/OTP latch “recommended operating conditions” is not implied. Exposure to
OB2279CPA-T SOP8, taping package, T absolute maximum-rated conditions for extended periods may
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TERMINAL ASSIGNMENTS
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Pin Num Pin Name I/O Description
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1 GND P Ground
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2 FB I Feedback input pin. PWM duty cycle is determined by voltage level into this
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6 SENSE I Current sense input pin. Connected to MOSFET current sensing resistor
node.
7 VDD P DC power supply pin.
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BLOCK DIAGRAM
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ELECTRICAL CHARACTERISTICS
(TA = 25℃, RI=100K ohm, VDD=16V, if not otherwise noted)
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OVP(De-Latch) VDD Latch Release 7.5 V
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Voltage Threshold
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I(Vdd)_latch VDD bleeding current 45 uA
at latch shutdown
when VDD = 9V
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TD_OVP VDD OVP Debounce 80 uSec
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time
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VDD_Clamp VDD Zener Clamp I(VDD ) = 5 mA 35 V
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Voltage
T_Softstart Soft Start Time 3 mSec
Feedback Input Section(FB Pin)
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VOH Output High Level Io = 20 mA 11 V
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VG_Clamp Output Clamp 16.5 V
Voltage Level
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T_r Output Rising Time CL = 1nf 120 nSec
T_f Output Falling Time CL = 1nf 50 nSec
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Over Temperature Protection
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I_RT Output Current of RT 70 uA
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pin
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Modulation range
/Base frequency
Freq_Shuffling Shuffling Frequency 32 HZ
CHARACTERIZATION PLOTS
20 8
18
16 6
I_vdd (uA)
14
I_vdd(uA)
12
10 4
8
6
4 2
2
0 0
0 2 4 6 8 10 12 14 16 -20 0 20 40 60 80 100 120
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VDD(V) Temp (C)
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VDD UVLO and Ops Current VDD Operation Current vs. Load
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3 Fosc 50Khz Fosc 65Khz Fosc 100Khz
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2.5
6
I_VDD (mA)
2
I(VDD) (mA)
5
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1.5 4
1 3
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0.5 2
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0 1
0 4 8 12 16 20 24 28 0 500 1000 1500 2000
VDD (V) Gatedrive Loading (pf)
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9.9 16.6
16.5
UVLO(enter) (V)
UVLO(exit) (V)
9.8
16.4
9.7 16.3
9.6 16.2
9.5 16.1
16
9.4 15.9
9.3 15.8
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120
Temp (C) Temp (C)
Fosc (Khz)
66.5
80 66
60 65.5
40 65
20 64.5
0 64
50 70 90 110 130 150 170 190 210 230 250 -20 0 20 40 60 80 100 120
Temp (C)
RI (Kohm)
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Vth_OC(V) vs Ivin(uA) I_RT vs. Temp
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1.0
70.6
70.4
0.9
Vth_OC(V)
I_RT (uA) w/
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70.2
RI=100Kohm
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70
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0.8
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69.8
69.6
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0.7 69.4
69.2
0.6 69
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Ivdd_lacth(uA) vs Vdd(V)
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50.0
Ivdd_lacth(umA
45.0
40.0
35.0
30.0
7.5 7.8 8.1 8.4 8.7 9.0
Vdd(V)
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universal input range design, a 2 MΩ, 1/8 W startup ( Khz )
RI ( Kohm)
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resistor could be used together with a VDD capacitor
to provide a fast startup and yet low power
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dissipation design solution. z Current Sensing and Leading Edge Blanking
(LEB)
z Operating Current Cycle-by-Cycle current limiting is offered in
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OB2279 current mode PWM control. The switch
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The Operating current of OB2279 is low at 2.3mA.
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internally generated random source so that the tone by the current sense input voltage and the FB input
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OB2279 Gate is connected to the Gate of an external constant output power limit is achieved with
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MOSFET for power switch control. Too weak the recommended OCP compensation scheme.
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gate drive strength results in higher conduction and At output overload condition, FB voltage is set
switch loss of MOSFET while too strong gate drive higher. When FB input exceeds power limit
output compromises the EMI. threshold value for more than 80mS, control circuit
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Good tradeoff is achieved through the built-in totem reacts to turnoff the power MOSFET. This is so
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pole gate drive design with right output strength and called OLP shutdown. It is either auto-recovery or
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dead time control. The low idle loss and good EMI latched shutdown depending on version of OB2279.
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system design is easier to achieve with this dedicated Similarly, control circuit shutdowns the power
control scheme. An internal 16.5V clamp is added for MOSFET when an Over Temperature condition is
MOSFET gate protection at higher than expected detected. This shuts down is either auto-recovery or
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IMPORTANT NOTICE
WARRANTY INFORMATION
On-Bright Electronics Corp. warrants performance of its hardware products to the specifications applicable at
the time of sale in accordance with its standard warranty. Testing and other quality control techniques are used
to the extent it deems necessary to support this warranty. Except where mandated by government requirements,
testing of all parameters of each product is not necessarily performed.
On-Bright Electronics Corp. assumes no liability for application assistance or customer product design.
Customers are responsible for their products and applications using On-Bright’s components, data sheet and
application notes. To minimize the risks associated with customer products and applications, customers should
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provide adequate design and operating safeguards.
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LIFE SUPPORT
On-Bright Electronics Corp.’s products are not designed to be used as components in devices intended to
support or sustain human life. On-bright Electronics Corp. will not be held liable for any damages or claims
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resulting from the use of its products in medical applications.
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MILITARY
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On-Bright Electronics Corp.’s products are not designed for use in military applications. On-Bright Electronics
Corp. will not be held liable for any damages or claims resulting from the use of its products in military
applications.
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