EXPERIMENT NO. 2 Cw, DIODE FAMILIARIZATION To become familiar with the characteristics ofa silicon diode and distinguish some ofthe common connections of diodes. OBJECTIVE: EQUIPMENT REQUIRED: 1 DC power supply 1 DMM 1 Breadboard DEVICES, 2 Silicon diodes (any will do, examples: IN4OO1, 1N4148) Resistors: 1 47K ri 33k 1 S6KR 1 1K 1 Ma ‘Theory Most modern-day digital multimeters can be used to determine the condition of « diode. They have a scale denoted by a diode symbol that will indicate the condition ofthe diode inthe forward and reverse biased regions. [If connected to establish forward condition, the meter will display the forward voltage across the diode ata curent level typically in the neighborhood of ? mA, If connected to establish a reverse-biased condition, an “OL” should appear on the display to suppor the open circuit approximation froquendy applied to this resion. Ifthe meter does not have the diode-checking capability, the condition of the diode can also be checked by obsaining some measure of the resistance level in the forward and reverse-biased regions. Both techniques for checking a diode will be introduced in the first part of the experiment. ‘TRONLAL ECE Deparment Las Date Maid: 0/1606 ‘Version 2.0,The DC or static resistance of a diode at any point on the characteristics is determined by the ratio of the diode voltage at that pont, divided by the diode Thats Rem te fons The AC resistance at particular diode current or voltage can be determined using ' tangent line drawn as shown in Figure 2-1. The resulting voltage (AV) and current (Al) deviations can then be detcrmined and the following equation be met av seat | stm eure 22 rmowat Diode Fmtattin EEE Doone oe Le Matt 91605 pare ‘Version: 20It can be shown through differential calculus thatthe AC resistances ofa diode in the vertca-rse soction ofthe characteristics is given by 25m¥ z= 1} ohms For levels of eurent at and below the knee ofthe curve, the AC resistance of a silicon diode i better approximated by Env n=2( 4) fom TRONLAL Diode Famiiarzation ECE Deparment Expt? 1s Date Maio: 071605 pare ‘Version 2.0Procedure Part 1. Diode test Diode testing seate ‘The diode-testing seale of the DMM ean be used to determine the condition ofa diode With one polarity, the DMM should provide the firing potential of the diode, while the reverse connection should result in an OL. response 10 ‘support open-citeut approximation, Using the connection in Figure 2-3, constant-currentsouree of about 2 mA imemal to the moter will forward bias junction, and a voltage in the neighborhood of 0.7 V should be obtained for silicon and 0.3. V for germanium, FORWARD BIAS Figure 2-3, the loads ae reversed, an OL indication should be obtained, [a low reading (less than 1 V) is obtained in both directions, the junction is shorted internally. 1.x OL indication is obtained in both directions, the junction is open TRONLAL Diode Faiiarzation ECE Department Fayed ‘Las Date Moi 0/1606 pete Verio 2.0Perform the tests of Table 21 for the both silicon diodes sisi Based on the results of Table 21, are both diodes in good condition? (Yes?No) we Resistance Seales [As indicated in the theory. the condition of a diode ean also be checked ‘using the resistance scales of « VOM or digital meter. Using the appropriate scales of the VOM or DMM, determine the resistance levels ofthe forward and reverse-bas regions ofthe Si diodes. Enter the results in Table 2.2 Table 22 Test ws [sa Forward ° Reverse [wav Although the fring potential is not revealed using the resistance seales, “good” diode will result in a lower resistance level inthe forward-biased state and a moch higher resistance level when reverse-biased ‘Based on the results of Table 2.2, are both diodes in good condition? (¥es?No) _vo ‘TRONLAL inde Famiiareation ECE Department Expt? ‘Last Date Mote: 01606 Bre Vern: 2.0Part 2, Forward-biased Diode characteristics In this pat ofthe experiment, we wll obtain sufficient data to plot the forward bias characteristics ef the silicon and germanium diodes on Figure 2S. 4 Construct the network of Figure 24 withthe supply (E) st at OV and record the measured value ofthe esis. Figure 2-4 Increase the supply voltage until Vp (hot E) reads 0.1 V and then ‘measure Vp and write result inset in Table 2.3. Calculate fy using the equation shown onthe table. TABLE 2.3. V, versus lp forthe silicon diode or [ox [03 [os [0s [06 [07 [on RN Vid o[1[2z[3~spsTers Ve(V) foe or [ee fone [ea | owe | aes [te Vi(¥) | ea [oa [is a7 awe [aw [oe , 3 (mA) |ycten | anne oretalome'a ttn’ ta a ass"ta ha Re “| 7 ECE Deparment Exo? ast Date Maia 097606Sueon, DDE D ° oes a of 4 0-2 | 0-3 | 0-4 ou jes | oan © aeons | 0S © |eccota | 0-803 s | ale = yep | ae os | 3 | 36 te on ced 0.41 ong pat ve an Me 4 “ 521 eal 244 we 0% 4 a41) Repeat step b forthe remaining settings of Vi ©) On Figure 2-5, plot lp versus Ve forthe silicon diode. Finish of the curves by extending the lower region ofthe curves to the intersection of the axis at = 0 mA and V, = 0 V. Label cach curve and clearly indicate data points. Part. Reverse-Bias 4) In Figure 2.6, a reverse-biased condition has been established. Since the reverse saturation curent willbe relatively small, a large resistance of ‘MQ is required ifthe voltage across R isto be of measurable dimensions. Construct the circuit of Figure 2-6 and record the measured value of K on the diagram, TRONLAL Diode Fariarzation ECE Deparent Expt Last Date Modi 0971605 perc Veion: 20,figima by) Measure the voltage V,. Caleulate the reverse saturation eurent from f, Void). The internal resistance (R,) ofthe DMM is included because Of the large magnitude ofthe resistance R. Your instructor will provide the fitemal resistance of the DMM for your ealculations. If unavailable, use @ typical value of “ina [seme (Measured) V,= 1.610 7.64. (Caleutated) = 4.06 A/S 6544 ‘©) Determine the DC resistance levels forthe silicon and germanium diodes using the equation (Caleuated) RASiI) = 0.074 N- (Calculated) Re (Si2)= D154 ‘Are the resistance levels sufficiently high to be considered open-circuit ‘Squivalents i appearing in series with resistors inthe low kilohm range? (YeoNo) 98S ‘TRONLAL iade Famiiarzation ECE Deqarent Expt Las Date Moi: 0/1605 pare ‘Version! 20Parts. DC Resistance 8) Using the Si cuve of Figure 2-S, determine the diode voltage at diode turrent levels indicated in Table 2. Then, determine the DC resistance at cach current level o ‘Table 25 mA) 02 c 5 7 Pn ed 1b). Repeat part (a) fr the second Si diode and complete Table 2.6 (Table 2.6 isthe sameas 2.5) ‘Table 26 Lim) 7 02 tas [ ase t ot | Ot aa, s ot | On win Z ots Lo oat eg ‘TRONLAL DindeFariarzation ECE Deparment Exp Las: Date Motes 081606 Yeo 20 pave©) Are there any trends in DC resistance (for both diodes) as the diode ‘current increases and as we move up the vertica-rise section of the ‘characteristics? Yes there ere, due DE resins i hnerely prego tunl Sie The Caer — Parts. AC Resistance 26m mA using the equation 1, 4) Determine the AC resistance a (mA) forthe silicon diode, (Calculated) = 2:88 0 mA for the first silicon diode. 'b) Repeat step 5(a) for (Cateulated) ro _ [3 Diode Famiarzation TRONLAL Exped ECE Deparunent pee Lest Date Modi: 09/76.06 ‘Veson: 20‘TRONLAL pave rt. Firing Potential Graphically determine the fring potential (threshold voltage) of the diode from its charateristics as defined in the theory. Show the straight-line approximation on Figure 2-5 ee VGsilicon) = Series and Parallel Diodes ‘The analysis of eireuits with diodes and a DC input requires thatthe states ofthe diodes first be determined, For the silicon diodes (with a transition voltage or “fring potential” of (0.7, the voltage across the diode is at least 0,7 tobe in the “on” state, Once the voltage across the diode reaches 0.7 V (0.3 V for germanium Aiodes), the diode wil turn “on”, Using the second approximation (introduced in experiment 1), the DC input analysis of circuits, both series and parallel connections, can be solved simply by replacing the diode by its corresponding fring potential, This experiment will verify some of the solutions made inthe discussion of the DC input diode circuits inde Famiiarzation Exe Lest Date Miia: 0/1606PROCEDURE A. Series Configuration: 1. Construct the circuit of Figure 2-7. Record the measured value of R. ont Tawel _ Ruan 2000 2. Using the measured value of the resistance, caleulate the theoretical values of V, and I Vofeale) = _ 454 Iefeale) = 84h 3. Measure the voltages Vp and V, using the DMM. Then measure the To Vidmeas) = ase meas) 4. Compare the resus of procedures A.2 and A ui TRONLAL Diode Fariiarzation ECE Department Exped Last Date Medi 08/1606 are ‘Veo 2.0,5. Using the same circuit of Figure 2-7, adjust the power supply to 0.4 V. Then, repeat procedures A.2 10 A, Vifeale) ov Vemeas) = eae) meas) ~ How do the theoritical and measured values compare? 6. Using the Figure 2-8, find the measured and computed values of 1, and V,. Use Ro for Ioeale. Figure 2-8 Io(cale) = _ ema To(mess) = 3° 1 ‘TRONLAL lade Famiarzation ECE Departnent Esp Ia Date Maia 071605Const vot the circuit of Figure 2, Figure 2 bbe Figure29 Measure the value of R, Find the measured and computed values of the following: Vs Iw Ve av Voc ro Ly = Sra Use the measured value of R forthe computed values. uA CE Deparment Exp Last Date Maio: 01605‘TRONLAL bere ‘Construct the circuit of Figure 2-10. Repeat stp 7, Figure 2-10 Manel vale of R's Fal the ete sd sompud ales of te pllowing: Veen = 5.26 iy = dates Use the measured value of R for the expected valucs. inde Famiiareation Esp st Date Maid: 0/1606The characteristics ofa silicon or germanium diode have the general shape shown in Figure 21 Figure 2-1 Note the change in seal for both the vertical and horizontal axes. In the roverse-biased region, the reverse-sturation currents are fairly constant from 0 V to the Zener potential In the forward-bias region, the current increases quite rapily with increasing diode voltage Note thatthe curve is rising almost vertically at « forward-bias voltage of less than 1 V. The forward-biased diode current willbe limited solely by the network ‘in which the diode is connected or bythe maximum current or power rating ofthe diode ‘The firing potential or threshold voltage is determined by extending a straight line (dashed lines of Fig 21) tangent to the curves until it hits the horizontal axis. The intersection withthe V, axis will determine the threshold voltage V,. ‘TRONLAL Diade Familiarzation ECE Department Expt? ‘Last Date Moe: 01606 pare ‘Version: 20