MOSFET

MOSFET Saturation
CMOS
 Voltage transfer characteristic(VTC) by Graphical Analysis

• The graphical analysis is

based on the observation
that the circuit will be
operating at the point of
intersection of a
particular value of GS
and the straight line
which can be rewritten In
the form
• Point ‘A’ at which
GS = Vt
• Point ‘Q’ at which
MOSFET is biased for
amplifier operation
GS = VGS & DS = VDS
• Point ‘B’ at which the
MOSFET leaves saturation
region and enters the
Triode region.
• Point ‘C’ which is deep in
to the Triode region where.
GS = VDD
• The bias point Q is determined by
the value of IGS and that of the load
resistance RD· Q-Point Determination
• Two Important considerations in
deciding on the location of Q are the
required gain and the allowable
signal swing at the output.
• In deciding on a value for RD it is
useful to refer to the ID-VDS plane.
• Figure shows two load lines
resulting in two extreme bias points:
Point Q1 is too close to VDD
resulting in a severe constraint on
the positive signal swing of Vds.
• Exceeding the allowable positive
maximum results In the positive
peaks of the signal being clipped
off, since the MOSFET will turn off
for the part of each cycle near the
positive peak.
• We speak of this situation by
saying that the circuit does not
have sufficient “Headroom.“
• Similarly point Q2 is too close to
the boundary of the triode region
thus severely limiting the
allowable negative signal swing
of Vds.
• Exceeding this limit would result
In the transistor entering in the
triode region for part of each
cycle near the negative peaks,
resulting in a distorted output
signal.
• In this situation we say that the
circuit does not have sufficient
“Legroom."