2SD669, 2SD669A

Silicon NPN Epitaxial

Application

Low frequency power amplifier complementary pair with 2SB649/A

Outline

TO-126 MOD

1. Emitter
2. Collector
3. Base
1
2
3
2SD669, 2SD669A

Absolute Maximum Ratings (Ta = 25°C)

Ratings
Item Symbol 2SD669 2SD669A Unit
Collector to base voltage VCBO 180 180 V
Collector to emitter voltage VCEO 120 160 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 1.5 1.5 A
Collector peak current I C(peak) 3 3 A
Collector power dissipation PC 1 1 W
1
PC * 20 20 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.

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 2SD669, 2SD669A

Electrical Characteristics (Ta = 25°C)

2SD669 2SD669A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 180 — — 180 — — V I C = 1 mA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 120 — — 160 — — V I C = 10 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 5 — — 5 — — V I E = 1 mA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — 10 — — 10 µA VCB = 160 V, IE = 0
1
DC current transfer ratio hFE1* 60 — 320 60 — 200 VCE = 5 V, IC = 150 mA*2
hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*2
Collector to emitter VCE(sat) — — 1 — — 1 V I C = 500 mA,
saturation voltage I B = 50 mA*2
Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*2
Gain bandwidth product f T — 140 — — 140 — MHz VCE = 5 V, IC = 150 mA*2
Collector output Cob — 14 — — 14 — pF VCB = 10 V, IE = 0,
capacitance f = 1 MHz
Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows.
2. Pulse test.

B C D
2SD669 60 to 120 100 to 200 160 to 320
2SD669A 60 to 120 100 to 200 —

Maximum Collector Dissipation

Curve
Area of Safe Operation
30
Collector power dissipation PC (W)

3
(13.3 V, 1.5 A)
Collector current IC (A)

1.0
20
(40 V, 0.5 A)
0.3

DC Operation(TC = 25°C)
10 0.1
(120 V, 0.04 A)
0.03 (160 V, 0.02A)
2SD669 2SD669A
0.01
0 50 100 150 1 3 10 30 100 300
Case temperature TC (°C) Collector to emitter voltage VCE (V)

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2SD669, 2SD669A

Typical Output Characteristecs Typical Transfer Characteristics

1.0 500
5
5. 5.40.5 .0
4 VCE = 5 V
TC = 25°C 200
3.5

Collector current IC (mA)

0.8
Collector current IC (A)

3.0 P
C 100
=
2.5 20
0.6 W 50

Ta = 75°C
2.0

–25
25
1.5 20
0.4
10
1.0
5
0.2 0.5 mA
2
IB = 0
1
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0
Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

DC Current Transfer Ratio Collector to Emitter Saturation Voltage

Collector to emitter saturation voltage VCE(sat) (V)

vs. Collector Current vs. Collector Current

300 1.2
5°C IC = 10 IB
Ta=7
DC current transfer ratio hFE

250 1.0

25
200 0.8

150 –25 0.6

C
5°
100 0.4
=7
–2 25
5
C
T

50 VCE = 5 V 0.2

1 0
1 3 10 30 100 300 1,000 3,000 1 3 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)

4
 2SD669, 2SD669A

Base to Emitter Saturation Voltage Gain Bandwidth Product

vs. Collector Current vs. Collector Current
Base to emitter saturation voltage VBE(sat) (V)

1.2 240
IC = 10 IB VCE = 5 V

Gain bandwidth product fT (MHz)

Ta = 25°C
1.0 200

25°C
0.8 TC = – 160
25
0.6 75 120

0.4 80

0.2 40

0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000
Collector current IC (mA) Collector current IC (mA)

Collector Output Capacitance

vs. Collector to Base Voltage
200
Collector output capacitance Cob (pF)

f = 1 MHz
100 IE = 0

50

20

10

2
1 2 5 10 20 50 100
Collector to base voltage VCB (V)