Power Transistors

2SC5243
Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

φ 3.3±0.2
20.0±0.5 5.0±0.3
3.0

■ Features

3.0
6.0
High breakdown voltage, and high reliability through the use of a

4.0
●

10.0
26.0±0.5
glass passivation layer

2.0
● High-speed switching
● Wide area of safe operation (ASO)

1.5

2.0
1.5

2.0±0.3 1.5

2.5
20.0±0.5
■ Absolute Maximum Ratings

Solder Dip
3.0±0.3 2.7±0.3
(TC=25˚C)
1.0±0.2
Parameter Symbol Ratings Unit 0.6±0.2

Collector to base voltage VCBO 1700 V 5.45±0.3

10.9±0.5
Collector to emitter voltage VCES 1700 V
Emitter to base voltage VEBO 6 V
1:Base
Collector current IC 15 A 2:Collector
1 2 3
Peak collector current ICP* 30 A 3:Emitter
TOP–3L Package
Peak base current IBP 10 A
Collector power TC=25°C 200
PC W
dissipation Ta=25°C 3.5
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C
*Non-repetitive peak

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 1700V, IE = 0 1 µA
Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA
Forward current transfer ratio hFE VCE = 5V, IC = 10A 5 12
Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2.8A 3 V
Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2.8A 1.5 V
Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz 3 MHz
Storage time tstg IC = 12A, IB1 = 2.4A, IB2 = –4.8A, 1.5 2.5 µs
Fall time tf Resistance loaded 0.12 0.2 µs

1
Power Transistors 2SC5243

PC — Ta IC — VCE hFE — IC
240 16 1000
VCE=5V
(1) TC=Ta TC=25˚C
220
Collector power dissipation PC (W)

(2) With a 100 × 100 × 2mm 14

Forward current transfer ratio hFE

200 Al heat sink
(1) (3) Without heat sink

Collector current IC (A)

180 (PC=3.0W) 12 IB=1000mA 100
800mA
160 600mA
10 TC=100˚C
140 400mA
25˚C
120 8 10

100 200mA –25˚C

6
80

60 4 1

40
(3) 2
20
(2)
0 0 0.1
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 1 10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VCE(sat) — IC VBE(sat) — IC Area of safe operation, horizontal operation ASO

100 100 50
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=3.5 IC/IB=3.5 f=64kHz, TC=25˚C

Base to emitter saturation voltage VBE(sat) (V)

Area of safe operation for

30 the single pulse load curve
due to discharge in the
40
high-voltage rectifier tube

Collector current IC (A)

10 10
during horizontal operation

3 30

1 1 TC=–25˚C

100˚C 20
25˚C
0.3

0.1 TC=–25˚C 0.1

10
25˚C 100˚C
0.03
<1mA
0.01 0.01 0
0.1 0.3 1 3 10 30 100 0.1 1 10 100 0 400 800 1200 1600 2000
Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V)

Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection
(1) PT=10V × 0.3A (3W) and without heat sink
Thermal resistance Rth(t) (˚C/W)

(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)

10 (2)

0.1

0.01
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)

2
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.