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SEMIKRON DataSheet SK 100 GB 12T4 T 24914930
SEMIKRON DataSheet SK 100 GB 12T4 T 24914930
SEMIKRON DataSheet SK 100 GB 12T4 T 24914930
GB-T
1 19-04-2016 MS © by SEMIKRON
SK100GB12T4T
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
$ ' $%
' 011 9 $% ' 1 $ . ' )* + #(A )&)* )&** $
. ' 0*1 + #(A )&) )&* $
$1 . ' )* + 0&6 0&* $
. ' 0*1 + 1&K 0&0 $
. ' )* + K&* 01&* C
. ' 0*1 + 06 0 C
® 445 ' 011 . ' 0*1 + *)
SEMITOP 3 F
61
SK100GB12T4 T
Temperature sensor
4011 '011+ >4)*'*LC? K68*M C
Features
! " #
!
Typical Applications*
Remarks
$%&! & $ ' # ( (!
GB-T
2 19-04-2016 MS © by SEMIKRON
SK100GB12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
3 19-04-2016 MS © by SEMIKRON
SK100GB12T4T
Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG
4 19-04-2016 MS © by SEMIKRON
SK100GB12T4T
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
5 19-04-2016 MS © by SEMIKRON