C 0 N IBS!a?

I , rage
HSTiOF PRINCIPAL SYMBOLS USED ill

CHAPTER-1 5 INTRODUCTION ... 1

CHAPTER.II s MODIFIED EXPRESSION FOR BARRIER HEIGHT OP ... 6

A METAL-SEMICONDUCTOR CONTACT WITH THIN
INTERFACIAL LAYER
j

2.1 ! Introduction. ... 6

2.2 Review of Earlier Works ... 7

2*3 Evaluation of Free SurfaceIbtential ... 14

2.4 Derivation of an Expression for . ... 17

■Barrier Height
2.5 Determination of cb ... 21
* o
2.6 IDiscussion ... 22

CHAPTER-in : METAL INDUCED INVERSION IN A METAL- ... 24

INSULATOR-SEMI CONDUCTOR (MIS) TUNNEL
SYSTEM

3.1 jIntroduction 24

3.2 Inversion in a SiO^-p-Si System 25

3.2.1 Evaluation of suxface potential 25

'3.2.2 Condition for inversion 27

3.2.3 Inversion layer charge density 29

3*3 (Inversion in Metal-Insulaton-Semiconductor 29

(MIS) Tunnel System

3.3.1 Evaluation of surface potential 30

3.3.2 Evaluation of critical metal work 31

function
3.3.3 Effect of interface Traps 34

3.4 Inversion Layer Charge Density 36

3*5 Discussion 36
 (ii)

CHAPTER-IV : IOW FREQUENCY CAPACITANCE-WIH?AGE (C-V)

CHARACTERISTICS OF MIS-SCHOTTKY barrier
DIODE

4.1 ! Introduction
i
4.2 ' Review of Earlier Worries
j
4.3 Voltage Dependence of Surface Potential
I
4*4 | Expression for Inversion Voltage
p
4.5 ! 1/C vs V Characteristics of an
’MIS-diode

4*6 : Discussion

CHAPTER-V ; THE CURRENT TRANSPORT MECHANIC IN

MIS-SGHOTTKY BARRIER DIODE
l
i
5.1 j Introduction
5.2 Review of Earlier Works
5.3 iExpression for Current Density

5.4 |Experimental Results

5.5 !Discussion

CHAPTER-VI : SUMMARY AND CONCLUSION

BIBHOGRAPHY

LEST ;0F PAPERS PUB HE SHED BY THE AUTHOR

ON MUCH THE 1HESIS IS BASED