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Semiconductor KTC8550S: Technical Data
Semiconductor KTC8550S: Technical Data
FEATURE E
・Complementary to KTC8050S. L B L
DIM MILLIMETERS
A 2.93 +_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
G
E 2.40+0.30/-0.20
H
MAXIMUM RATING (Ta=25℃) 1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
Collector-Base Voltage VCBO -35 V P P
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
Collector-Emitter Voltage VCEO -30 V
N
C
P 7
J
Q 0.1 MAX
Emitter-Base Voltage VEBO -5 V M
K
Collector Current IC -800 mA
1. EMITTER
Emitter Current IE 800 mA
2. BASE
Marking
h FE Rank Lot No.
Type Name
BL
I C - V CE h FE - I C
-1k 2k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN h FE
-800 -8
-7 500
-6
300
-600 -5 Ta=100 C
-4
Ta=25 C
-400 100
-3 Ta=-25 C
-2 50
-200 30
IB =-1mA
0
0 10
0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -30 -100 -300 -1k
VCE(sat) - I C I C - VBE
COLLECTOR-EMITTER SATURATION
-3 -1k
COMMON
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
-500 EMITTER
I C /I B =25
-300 VCE =-1V
-1
-0.5
VCE(sat) (V)
-100
-0.3
25 C
C
-50
C
-30 100
-25
Ta=
Ta=
Ta=
-0.1
-10
-0.05 Ta=100 C
-0.03 Ta=25 C -5
Ta=-25 C -3
-0.01 -1
-1 -3 -10 -30 -100 -300 -1k -0.2 -0.4 -0.6 -0.8 -1.0
Pc - Ta
500
COLLECTOR POWER DISSIPATION
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
400 2 Ta=25 C
1
Pc (mW)
300
200
2
100
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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