October 2001

FDFS6N303
FETKEY N-Channel MOSFET with Schottky Diode
General Description Features

Fairchild Semiconductor's FETKEY technology incorporates 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V.

a high cell density MOSFET and low forward drop (0.35V) RDS(ON) = 0.050 Ω @ VGS = 4.5 V.
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the VF < 0.28 V @ 0.1 A
package. The general purpose pinout has been chosen to VF < 0.42 V @ 3 A
maximize flexibility and ease of use. FETKEY products are VF < 0.50 V @ 6 A.
particularly suited for switching applications such as DC/DC Schottky and MOSFET incorporated into single power
buck, boost, synchronous, and non-synchronous converters surface mount SO-8 package.
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is General purpose pinout for design flexibility.
desirable.
Ideal for DC/DC converter applications.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D A 1 8 C
D
C
C FS A 2 7 C
FD 303
6N S 3 6 D
G
S G 4 5 D
SO-8 pin 1
A
A

MOSFET Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter FDFS6N303 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 6 A
- Pulsed 30
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

Schottky Diode Maximum Ratings TA = 25oC unless otherwise noted

VRRM Repetitive Peak Reverse Voltage 30 V
IO Average Forward Current (Note 1a) 2 A

© 2001 Fairchild Semiconductor Corporation FDFS6N303 Rev. D

Electrical Characteristics (TA = 25 oC unless otherwise noted )
MOSFET ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ =125°C 20 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A 0.025 0.035 Ω
VGS = 4.5 V, I D = 4.8 A 0.043 0.05
gFS Forward Transconductance VDS = 10 V, ID = 6 A 12 S
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 15 A
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 350 pF
Coss Output Capacitance f = 1.0 MHz 220 pF
Crss Reverse Transfer Capacitance 80 pF
Qg Total Gate Charge VDS = 15 V, ID = 6 A, VGS = 10 V 12 17 nC
tD(on) Turn - On Delay Time VDD = 10 V, ID = 1 A, 7.5 15 ns
tr Turn - On Rise Time VGS = 4.5 V, RGEN = 6 Ω 12 25 ns
tD(off) Turn - Off Delay Time 13 25 ns
tf Turn - Off Fall Time 6 15 ns
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A (Note 2) 0.8 1.2 V
SCHOTTKY DIODE CHARACTERISTICS
BV Reverse Breakdown Voltage IR = 1 mA 30 V
IR Reverse Leakage VR = 30 V 0.5 mA
VF Forward Voltage IF = 0.1 A 280 mV
IF = 3 A 420
IF = 6 A 500
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.

a. 78OC/W on a 0.5 in2 b. 125OC/W on a 0.02 in2 c. 135OC/W on a 0.003 in2

pad of 2oz copper. pad of 2oz copper. pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDFS6N303 Rev. D
 Typical Electrical Characteristics
30 3
VGS= 10V

DRAIN-SOURCE ON-RESISTANCE
6.0V
ID , DRAIN-SOURCE CURRENT (A)

5.0V
25 2.5

R DS(ON) , NORMALIZED
VGS = 4.0V
20 4.5V
2
4.5V
15
4.0V 5.0V
1.5
6.0V
10
7.0V
3.5V 10V
1
5
3.0V
0 0.5
0 1 2 3 4 0 5 10 15 20 25 30

V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.1
ID = 6A
I D = 3A
DRAIN-SOURCE ON-RESISTANCE

R DS(ON) , ON-RESISTANCE (OHM)

VGS = 10V
1.4
0.075
R DS(ON) , NORMALIZED

1.2
TA = 125°C
0.05

0.025 25°C
0.8

0
0.6 2 4 6 8 10
-50 -25 0 25 50 75 100 125 150
V GS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

30 30
VDS = 5V VGS = 0V
I S , REVERSE DRAIN CURRENT (A)

TA = -55°C 10
25
25°C
I D , DRAIN CURRENT (A)

125°C 1
TA = 125°C
20

0.1 25°C
15
-55°C
0.01
10

5 0.001

0 0.0001
1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V) V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDFS6N303 Rev. D
 Typical Fet And Schottky Electrical Characteristics

10 1000
V GS , GATE-SOURCE VOLTAGE (V)

I D = 6.0A
V DS = 5V
8 500

CAPACITANCE (pF)
10V
Ciss
6 15V
Coss
200
4

100 Crss
2 f = 1 MHz
VGS = 0V
0 50
0 2 4 6 8 10 12 14 0.1 0.3 1 3 10 30
Q g , GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10 1

TJ = 125°C
I F , FORWARD CURRENT (A)

IR , REVERSE CURRENT (A)

0.1

TJ = 125°C
0.01
1
25°C
0.001

0.0001 25°C

0.1 0.00001
0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30
V F , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)

Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 R θJA (t) = r(t) * R θJA

0.2
R θJA =135° C/W
0.1 0.1

0.05 0.05
P(pk)
0.02
0.02 0.01 t1
0.01 Single Pulse
t2

0.005 TJ - TA = P * RθJA (t)

Duty Cycle, D = t1 /t2
0.002
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.

FDFS6N303 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4
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