SM3119NAU ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 30V/50A, D
RDS(ON)=10.5mW (max.) @ VGS=10V
S
RDS(ON)=14.5mW (max.) @ VGS=4.5V
· 100% UIS + Rg Tested G

· Reliable and Rugged Top View of TO-252-2

· Lead Free and Green Devices Available D
(RoHS Compliant)

Applications G

· Power Management in Desktop Computer or

DC/DC Converters.
S

N-Channel MOSFET

Ordering and Marking Information

SM3119NA Package Code
U : TO-252-2
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Temperature Range Handling Code
TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device

SM3119NA U : SM3119NA XXXXX - Lot Code

XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.8 - February, 2017
SM3119NAU ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current 30 A
TC=25°C 120
IDP Pulse Drain Current Tested A
TC=100°C 80
a TC=25°C 50*
ID Continuous Drain Current A
TC=100°C 35
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RqJC Thermal Resistance-Junction to Case Steady State 2.5 °C/W
t £ 10s 20
RqJA Thermal Resistance-Junction to Ambient °C/W
Steady State 50
b
IAS Avalanche Current, Single pulse L=0.1mH 23 A
b
EAS Avalanche Energy, Single pulse L=0.1mH 26.45 mJ
Note a：* Current limited by bond wire.
o o
Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).

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Rev. A.8 - February, 2017
SM3119NAU ®

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 30 - - V
Drain-Source Breakdown Voltage VGS=0V, ID(aval)=14A
BVDSSt 34 - - V
(transient) Tcase=25°C, ttransient=100ns
VDS=24V, VGS =0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.5 1.9 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, IDS=30A - 8.5 10.5
c
R DS(ON) Drain-Source On-state Resistance TJ=125°C - 12.7 - mW
VGS=4.5V, IDS=15A - 12 14.5
Gfs Forward Transconductance VDS=5V, IDS=15A - 40 - S
Diode Characteristics
c
VSD Diode Forward Voltage ISD=30A, VGS=0V - 0.9 1.1 V
trr Reverse Recovery Time - 20 -
ta Charge Time - 12 - ns
IDS=30A, dlSD/dt=100A/ms
tb Discharge Time - 8 -
Qrr Reverse Recovery Charge - 11 - nC
d
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.0 3 4.5 W
Ciss Input Capacitance 630 760 910
VGS=0V,
Coss Output Capacitance VDS=15V, 105 128 155 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 55 72 95
td(ON) Turn-on Delay Time - 8 16
tr Turn-on Rise Time VDD=15V, RL=15W, - 10 19
IDS=1A, VGEN =10V, ns
td(OFF) Turn-off Delay Time RG=6W - 24 43
tf Turn-off Fall Time - 4.6 8.8
d
Gate Charge Characteristics
VDS=15V, VGS =4.5V,
Qg Total Gate Charge - 7 9
IDS=30A
Qg Total Gate Charge - 14 17
Qgth Threshold Gate Charge - 1.4 1.9 nC
VDS=15V, VGS =10V,
Qgs Gate-Source Charge IDS=30A - 2.8 3.3
Qgd Gate-Drain Charge - 3 3.5
Note c：Pulse test ; pulse width£300ms, duty cycle£2%.
Note d：Guaranteed by design, not subject to production testing.

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Rev. A.8 - February, 2017
SM3119NAU ®

Typical Operating Characteristics

Power Dissipation Drain Current

60 60

50 50
Ptot - Power (W)

ID - Drain Current (A)

40 40

30 30

20 20

10 10

o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 5
Normalized Transient Thermal Resistance

100
it
im

1
ID - Drain Current (A)

1ms
)L

Duty = 0.5
on
s(

10ms
Rd

10 100ms 0.2

0.1
1s
0.05
0.1
DC
0.02
1
0.01
Single Pulse
2
Mounted on 1in pad
O o
TC=25 C RqJA :20 C/W
0.1 0.01
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.8 - February, 2017
SM3119NAU ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

100 20
VGS= 6,7,8,9,10V
90 18
5V
80

RDS(ON) - On - Resistance (mW)

16 VGS=4.5V
70
ID - Drain Current (A)

14
4.5V
60
12
50
VGS=10V
10
40 4V
8
30

20 6
3.5V
10 4
3V
0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

28 1.6
IDS=30A IDS =250mA
1.4
24
RDS(ON) - On - Resistance (mW)

Normalized Threshold Vlotage

1.2
20

1.0
16
0.8

12
0.6

8 0.4

4 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.8 - February, 2017
SM3119NAU ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0
VGS = 10V 100

1.8 IDS = 30A

Normalized On Resistance

1.6

IS - Source Current (A)

1.4 10 o
Tj=150 C
1.2 o
Tj=25 C
1.0

0.8 1

0.6

0.4
o
RON@Tj=25 C: 8.5mW
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1000 10
Frequency=1MHz VDS= 15V
900 9 IDS= 30A
800 8
VGS - Gate-source Voltage (V)

Ciss
700 7
C - Capacitance (pF)

600 6

500 5

400 4

300 3

200 2
Coss
Crss
100 1

0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14
VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.8 - February, 2017
SM3119NAU ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01W

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.8 - February, 2017
SM3119NAU ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

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Rev. A.8 - February, 2017
SM3119NAU ®

Classification Profile

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Rev. A.8 - February, 2017
SM3119NAU ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080

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Rev. A.8 - February, 2017