ISSN (Print) : 0974-6846

Indian Journal of Science and Technology, Vol 10(33), DOI: 10.17485/ijst/2017/v10i33/115467, September 2017 ISSN (Online) : 0974-5645

A Fast Strategy to Determine the Physical and

Electrical Parameters of Silicon Photovoltaic Cell
El hadi Chahid1*, Mohammed Idali Oumhand2 and Abdessamad Malaoui1
1
Laboratoire Interdisciplinaire de Recherche en Sciences et Techniques (LIRST), Polydisciplinary Faculty,
Sultan Moulay Slimane University, Mghila B.P. 592, Beni Mellal - 23000, Morocco;
Chahid2016@yahoo.com, a.malaoui@usms.ma
2
Laboratoire de Genie de l’Energie, Matériaux et Systèmes (LGEMS), National School of Applied Sciences,
B.P. 1136, Ibn Zohr University, Agadir - 80000, Morocco ; idali4@yahoo.fr

Abstract
Objectives: This paper proposes a fast strategy to extract the electrical parameters of photovoltaic cell (PV) and determine
both the minoritycarrier’s lifetime and the diffusion lengths of photovoltaic cell using the double-diode model. Methods/
Statistical Analysis: The polycrystalline silicon (poly-Si) junction is chosen in this work due to the importance of its
proprieties in industrial and economic fields. The proposed method to extract the PV electrical parameters contains two
steps. The first is based on the graphical adjustments to choose the initial values of these parameters, and the second
method uses numerical approach based on the Modified Newton-Rap son’s algorithm. Findings: The values of obtained
parameters are compared to the others methods and give a considerable agreement. The statistical errors (MBE and
t-statistic) are about 10-8 and 10-10 respectively. Furthermore, the found values of both the minoritycarrier’s lifetime and the
diffusion lengths are precisely comparable with theoretical models, and give a best value. Application/Improvements:
The obtained values give very useful information on the cell intrinsic quality, and can improve the conception and realization
performances of the solar cell with high conversion efficiency.

Keywords: Carrier Lifetime, Diode, Photovoltaic, Parameters Extraction

1. Introduction
are not given by the data sheet of the manufacturer of
In recent years, the Photovoltaic Cells (PVC) based on
these PVC. Moreover, they are not directly measurable by
semiconductor junction, in particular on polycrystalline
the experimental set-ups. Several numerical techniques
silicon (poly-Si), know a great focus because they have
have been used for the identification of these parameters
several proprieties as the low cost and simplicities during
such as the least square method5, the Newton’s method6,
manufacturing stages. Many research works in the PVC
and the Levenberg Marquardt’s method7.
fields allow to ameliorate the photovoltaic conversion effi-
In this work, the used model of PVC depends on
ciencies to exceed the range between 19.8% and 23%1,2. To
seven electrical parameters
better understand of the physical mechanisms inside the
(Photocurrent Iph , diffusion saturation current Is1, ide-
solar cell, we must to precisely determine these electrical
parameters values. The real model of PVC contains both ality factor n1 of diode 1,  and recombinationsaturation
the series and parallel resistances, and two ideal diodes3,4. current Is2 , ideality factor n2 of the second diode, series
A good handling of this model requires precise determi- resistance Rs and shunt resistance Rsh). The proposed
nation of its electrical parameters. The values of the latter method in this work is based on the Newton’s algorithm.

*Author for correspondence

 A Fast Strategy to Determine the Physical and Electrical Parameters of Silicon Photovoltaic Cell
One of the problems in using this last is the choice of the
initial values; a poor choice of these
Parameters can produce a divergence of this method.
This is why it is interesting to initialize
The Newton’s method with values given by other
complementary methods, such as the graphical one8.
Nowadays, a better determination of the minority carrier’s
lifetime permits judging the quality of the PVC mate-
rial9. A high value of lifetime indicates a good material,
while a low lifetime can inform the inadequate technical
problems of PVC construction as a dislocations or high
impurity concentrations in this material10,11.
The objective of this paper, in one hand, is to deter-
mine the seven electrical parameters of the p-n Si-poly
using the developed algorithm. In the other hand, the
exploitation of the found electrical parameters make it
possible to deduce both the minority carrier’s lifetime and
diffusion lengths using the analytical method.
2. Solar Cell Modeling
2.1 Electrical Model of Double Diode
The photovoltaic cells can be represented by the Shockley
double diode model12 and his equivalent electrical circuit
is described by the diagram of Figure1. The analytical
relationship between the current I and the voltage V of
this model is:
I = I ph − I s1 ( exp((V + IRs ) / n1Vth ) − 1) − I s2 ( exp((V + IRcarrier
/ n1Vth ) − 1) − I s2 ( exp((V + IRs ) / n2Vth ) − 1) − (V + IRs ) / Rsh (1)
The electrical terms of this equation are the photocurrent
Iph, the diffusion reverse saturation current Is1, the recombi-
nation reverse saturation current Is2, the ideality factors of
the two diodes (n1, n2), the series resistance Rs, the parallel
resistance (or shunt) Rsh. The thermal voltage (Vth = KT/q) of
the PVC is equal approximately to 26mV at 25oC, (q) is the
elementary electron charge, (K) is the Boltzmann’s constant,
and (T) is the absolute cell temperature.
2.2 Minority Carrier Lifetime Measurement
As cited previously, the minority’scarrier’s recombina-
tion are quantified by their lifetimes. The dominant type
of recombination in the silicon is the Shockley–Read–
Hall (SRH) mechanism. In this last, the recombination
2 Vol 10 (33) | September 2017 | www.indjst.org
of the electron doesn’t follow a direct transition from the
conduction to the valence bands, but it follows an indi-
rect transition via the recombination zones which his
energy level is located in forbidden band gap. Also, the
bulk recombination lifetime of minority carriers τ SRH is
highly depending on the density and the position of these
traps. The τ SRH is identified by the following equation13:
Figure 1. The double-diode equivalent circuit model.
τ SRH = n / U SRH (2)
Where (n)the excess of the charge carriers is related
to the equilibrium, and (USRH) is the recombination rate
SRH in the PVC. This lifetime in the junction can iden-
tify the diffusion length of the minority carrier. This last
represents the average distance that a photo-generated
)
s ) / n2Vth ) − 1 − (V + IRs ) / Rsh
can cross before it is recombined. The relationship
between τ SRH and (L) ( L ) is defined by the following
formula13:
L = D.τ SRH
(3)
With (D) is the diffusion coefficient, and the lifetime
τ SRH depends on the defects level in the junction.
3. Proposed Method of Electrical
Parameters Extraction
The extraction of photovoltaic parameters necessitates
the resolution of nonlinear equation (1), which is difficult
to obtain analytically accurate values of these parameters
with analytical methods. In this study, an accurate numer-
ical method to extract these parameters is presented using
two steps.
Indian Journal of Science and Technology
 El hadi Chahid, Mohammed Idali Oumhand and Abdessamad Malaoui

The best choice of initial parameters can accelerate 3.2 Diode Ideality Factors
the algorithm convergence. Contrary, poor initial values
In equation (1), the first diode (D1) represents a diffu-
increase the iterations number and can affect on the opti-
sion process of load carriers, while the second diode (D2)
mization algorithm. In literature many techniques can
represents the carrier’s recombination in the space charge
determine the initial parameters of PVC used to start the
region. Several authors use the ideality factors (n1 = 1 and
Newton Rap son’s method14,15.
n1 = 2) in ideal cell but these values become unsuitable
3.1 Resistances Values of Rs and Rsh for a real diode17,18. To initialize these factors ( n , n ) we
0
1
0
2

choose the initial values of ideality factors equal to (1, 2)

The initial estimation of these resistances Rs0 and Rsh0, can
respectively.
be calculated by graphical method16.
In the small voltage values, the I = f (V) curve is linear:
3.3 Saturation Current Is1 and Is2
I = I ph − (V + Rs I ) / Rsh
(4) The saturation currents Is1 and Is2 are determined from
This equation can be written: the equation (1) at points A1(0, Isc) and A2(Vco, 0). A
system of two equations was obtained and solved with
I I pA − GaV
= (5) Cramer’s method19.
I s1 exp (Vco / (n1Vt ) ) − 1 + I s2 [exp (Vco / (n2Vt ) ) − 1] = I ph − Vco / Rsh
=
With I pA I ph / (1 + G sh R s ) =
and G a G sh / (1 + G sh R s ) (11)
I s1 exp ( ( I sc Rs ) / (n1Vt ) ) − 1 + I s2 [exp ( ( I sc Rs ) / (n2Vt ) ) − 1] = I ph − I sc − ( I sc Rs ) / Rsh
1 (12)
Ga ≈
Thus, Ga is the right slope with a value . Knowing Rsh Using the matrix notation, this equation system can
that Rs >> 1, the shunt resistance Rsh, is the inverse tangent be written as:
of the line at the point (V = 0, I = Isc) which is expressed
as: I s1 A11 + A12 I s2 = I ph − I sc − ( I sc Rs ) / Rsh (13)
1/ Rsh 0
= (=
dI / dV ) I = I
sc
tg ( β ) . (6)
A21 I s1 + A22 I s2 =
I ph − Vco / Rsh (14)

=
• In the high voltage values of the curve I = f (V), With, A11  exp ( ( I sc Rs ) / ( n1Vt ) ) − 1 ,
the current through the cell is given by:
=A12 [exp ( I sc Rs ) / (n2Vt ) ) − 1] ,
I ph − I 0 exp ( β (V + Rs I ) / n )
Ic =
= (7) A21 exp((Vco ) / (n1Vt ) ) − 1 ,
To determine the Rs series resistance, the voltage V is
written as independent variable in Eq. (7) to give =
the fol- A22 [exp ( (Vco ) / (n2Vt ) ) ) − 1] ,
lowing equation:
n n B1 = I ph − I sc − ( I sc Rs ) / Rsh ,
=V ln ( I pA / I 0 ) − Rs I + ln (1 − I c / I pa ) (8)
β β
B=
2 I ph − Vco / Rsh .
The (-R ) is the slope of this equation and the tan (α)
s
The system solution formed by the equation (13)&(14)
at the point (V = Voc, I = 0), can be written as:
is given as follows20:
tan (α ) = ( dI / dV )V =V = −1/ Rs 0 (9)
oc =I s01 ( B2 A12 − B1 A22 ) / det (15)
0
The initial value of photocurrent I ph can be deduced I s02
= ( B2 A11 − B1 A21 ) / det (16)
from R s0 , R sh 0 and Isc as:
Where (dot) is the matrix determinant: det = (A22A12
= 0
I ph I sc ( Rs 0 + Rsh 0 ) / Rsh 0 (10) - A12 A21)

Vol 10 (33) | September 2017 | www.indjst.org Indian Journal of Science and Technology 3
 A Fast Strategy to Determine the Physical and Electrical Parameters of Silicon Photovoltaic Cell
4. Developed Method
Our approach is based on the Newton-Raphson’s method
to solve the nonlinear equation of (f(x)=0). The algorithm
of this method use the Taylor development at the order 1
in initial value x0 of solution. The root approximation of
the equation (f(x) = 0) is given as:
xi +=
1 xi − f ( xi ) / f ′ ( xi )
Where (i) is the iteration number and f ’(x) is
the derivative of the function f(x). After each itera-
tion, the developed software program is stopped when
f ( xi +1 ) < ε , ( ε : stopping tolerance ) . In this con-
dition, the equation (1) becomes as:
F ( I ,V ) = ( )
− I s1 exp ( (V + IRs ) / ( n1Vth ) ) − 1 − I s2
) ( )
/ ( n1Vth ) ) − 1 − I s2 exp ( (V + IRs ) / ( n2Vth ) ) − 1 − (V + IRs ) / ( Rsh ) − I
In this study, the function variables are x1, x2 ,...xM.
these latter represent seven electrical parameters of PVC.
These variables are the elements of the vector X = [x1, x2
,...xM] and the problem is presented by (N) equations as
the following compacted form F1 (x1, x2 ,...xM ) = 0 with(i
= 1, 2, ..., N). The obtained system contains a equations
number greater than the seven parameters. In this case,
the obtained Jacobian matrix (J) is not a square matrix, so
we must use the pseudo inverse of the Jacobian (J)+. Thus,
the parameters vector (X) to be identified are updated at
each iteration of the modified Newton-Rap son’s method
(MNR)21:
X i=
+1 X i −  J +  .[ F ]i
i
Where X i is the vector containing the resulting
parameters at iteration ( i ) , Fi is the elements of vector
F and ( i= 1, …, N ) and ( N ) is the number of values
in a set of data). The row vector elements (J i ) is given by:
Ji =[∂Fi / ∂x1 , ∂Fi / ∂x 2 ,…, ∂Fi / ∂x M ] , and the itera-
tive process will stop, when the error å
X i +1 − X i ≤ . The
main steps of computational algorithm to estimate the PV
parameters are shown in Figure 2.
4 Vol 10 (33) | September 2017 | www.indjst.org
5. Results and Discussions
5.1 Determination of Electrical Parameters
of PVC
The used database in this study consists of 26 points (N =
26) of I-V measurements. These experimental values are
ranging from (-0.2V, 0.764A) to (0.59V, -0.21A)22,23.
(17)
An experimental investigation of PVC is defined in the
standard test conditions (STC) which are the Air Mass 1.5
−2
spectrum, an incident power density Pi of 1000 W.m
and a temperature of 25 ºC. Using the proposed method,
the obtained current (I), power (P), and  absolute cur-
rent error (E) versus the voltage (V) are presented in the
Figure 3. This error is defined as:
( )
exp ( (V + IRs ) / ( n2Vth N) ) − 1 − (V + IRs ) / ( Rsh ) − I
=E ∑(I m
− I (Vi , X )) 2 (20)
i
(18) i =1
m m
Where Ii , Vi are the measured current and volt-
( )
age respectively? I Vim , X Is the calculated current by
equation? (1), and ( X ) is electrical parameters vector
defined in equation. (29). as it is observed in Figure 3a,
& 3b, satisfactory agreement is remarkable between the
obtained results and the experimental data. To confirm
this observation, the deviation between the measured and
the calculated current is relatively small; it does not exceed
7 mA Figure 3c. By analyzing the error variation in this
curve, the output voltage increases significantly with error
(E). This result obliges us to take into account the step
(19) voltage (δ V ) which is variable during the measurement
process. Therefore, for the high voltage measurement, the
values of step voltage must be small.
Using developed method, the initial values of seven
electrical parameters and their optimal final values are
listed in Table 1. In this table, some reference values are
presented to be compared with the final ones24. It’s noted
that the initial and final values are closer but they show
significant variations. Also, the found optimal values by
the developed method are very similar to those given in
the reference. These results show the importance of ini-
tialization stage because they permit a fast convergence of
developed algorithm. To analyze the performance of the
proposed technique, many statistical errors are calculated
Indian Journal of Science and Technology
 El hadi Chahid, Mohammed Idali Oumhand and Abdessamad Malaoui

and interpreted. These indicators are the standard devia- Table 2. Statistical indicators results of electrical model
tion (SD), the root mean square error (RMSE), the mean Indicators statistics Our method In reference24
bias error (MBE), and the “t-statistics”. Their analytical SD(10-3) 2.79 20.32
expressions are defined as follows8,24:
RMSE (10-3) 2.73 19.92
MBE (10-3) 5.1×10-5 -14.10
1 N

( )
2
∑ t (10 ) 9.3×10 5.01
-5 -5
=SD I i − I im ,
N − 1 i =1

1 N

∑(I )
2
RMSE
= i − I im ,
N i =1

(21)
1 N
MBE
=
N
∑(I
i =1
i −I i
m
),

( N − 1) MBE 2 / RMSE 2 − MBE 2

t= ( )
The obtained statistical errors provide information
on the over or under-estimation of the calculated values
related to the experimental data. Indeed, a higher value
of RMSE indicates that there is an inappropriate adopted
model. A positive value of MBE implies an overestimation Figure 2. The flowchart of proposed algorithm for solar cell
of the fitting curve compared to the data base. A small parameters estimation.
value of ‘t-statistical’ error indicates that the used model is
correctly specified.
The found values of these statistical indicators are pre-
sented in Table 2, and compared with reference values24.
This table shows that developed method is powerful and
accurate, and indicates that extracted PVC parameters
are more precise than those found by another works24.
Indeed, the errors (SD, RMSE and NRMSE) are amelio-
rated about 10 times, while the other errors (MBE and t)
are ameliorated 105 times.

Table 1. Extracted electrical parameters for poly-Si

solar cell in reference24 and in this work
Electrical Initial Final values In reference24
parameters values
Figure 3. (a) I-V characteristics, (b) P-V characteristics of
Iph (A) 0.7675 0.7643 0.7602 calculated and experimental Measurements and (c) the
Is1(A) 2.77×10-10 1.7432×10-10 10-10 variation of absolute current error with voltage.
Is2(A) 8.13×10-10 5.3975×10-6 9.889×10-7
N1 1 0.99 1.6 5.2 Determination of Lifetime and Diffusion
N2 2 2.00 1.192 Length Carrier Minorities
Rs(ῼ) 0.045 0.0450 0.032 In order to link the electrical with the physical param-
Rsh(ῼ) 61.549 61.5495 81.3 eters the Shockley–Read–Hall (SRH) theory is used. The

Vol 10 (33) | September 2017 | www.indjst.org Indian Journal of Science and Technology 5
 A Fast Strategy to Determine the Physical and Electrical Parameters of Silicon Photovoltaic Cell

studied parameters in this relationship are the minority For silicon semiconductor, the density (n1) as a func-
carrier lifetimes (τn, τp) and length diffusion (Ln, Lp) in tion of the temperature (T) can be written as27:
regions P and N respectively. In this work, a surface (S = 2
cm2) of p-n Silicon is chosen with other physical param- n i = 4.34 ×1015 × T 3/2 exp ( −6493 / T ) (29)

eters listed in Table 3.
In literature, the current densities (J01, J02) of diode 1 Table 3 can be exploited to determine the physi-
and 2 respectively are defined as25,26: cal parameters (τ n , τ p , Ln , and L p ) using equations
(22)-(29). These parameters are presented in Table 4 and
ni2 ni2 compared with those found by other research28,29.
=J 01 q Dn / τ n + q Dp / τ p
Na Nd They show a small difference between τ1 in the equa-
(22) tion (28) and their references. However, the difference
J 02 ≈ π qWni / τ nτ p of (τp) is important which approximately equal to 10%;
(23) the calculated (τp) is greater about 10 times than in refer-
Where (ni) is the intrinsic carrier density, (W) is deple- ence29. This difference due to existing of recombination
tion layer width, (Na) and (Nd) are acceptor and donor mechanism in the depletion region. Generally, these
densities, (Dn) and (Dp) are the diffusion coefficients of mechanisms are neglected in standard J02 formula30. The
minority carriers, (τn) and (τp) are lifetimes of minority analytical expression of J02 must be corrected by an effec-
carriers in P and N regions respectively. In equation (23) tive coefficient (α) as (. In this case, the values of these
the expression (W) is given as: parameters are, Lp = 12 μm, and α = 3π.

2ò Table 3. Device and material parameters of np poly-Si

=W (1/ N a + 1/ N d )Vbi (24)
solar cell used in calculation
q
Where  is the absolute dielectric constant of the Physical parameters Parameters values
semiconductor, and Vbi is the built-in voltage across the Ni(cm-3) 1.5×1010
p-n junction expressed as: Eg(eV) 1.12
Na(cm ) 1015
( )
-3

Vbi = Vt ln ( N a N d ) / ni2 (25)

Nd(cm-3) 5×1018
The preceding equations are simplified and written as: Dn(cm2/s) 34.49
Dp(cm /s)2
11.75
a τ p + b τn =
cJ 01 / J 02 and τ nτ p = c / J 02 (26) W(µm) 1.01
Vbi(V) 0.795
2
With a = q Dn ni / N a , b = q D p ni2 / N d ,
Table 4. Comparison of the physical parameters
c = π qWni
calculation and the data reported
Equation (26) gives a following second order equa- Physical Proposed Reference
tion: parameters method method29

( )
2 𝜏n(s) 2.35×10-5 1.17×10-5
a τp − ( cJ 01 / J 02 ) τ p + bc / J 02 =
0 (27)
𝜏p(s) 1.36×10-8 1.18×10-7
Ln(µm) 285 201
The solution of this equation is:

=τp (( cJ 01 / J 02 ) ± )/ (28)
Lp(µm) 4 12

The discriminant of this equation is: 6. Conclusion

= cJ 01 ( cJ 01 − 4ab ) / (J 02 ) 2 This paper proposes a fast method for electrical param-
eters extraction of poly-Si solar cell with two diodes

6 Vol 10 (33) | September 2017 | www.indjst.org Indian Journal of Science and Technology
 El hadi Chahid, Mohammed Idali Oumhand and Abdessamad Malaoui
model. The advantages of this model are the real repre-
sentation of the intrinsic material phenomena. Also it
can give information about the recombination of charge
carries due to the inevitable defects in the material. The
proposed method is based on the initialization values of
seven electrical parameters with graphical method and
the development of new algorithm. This later is based on
the Newton Rap son’s method to determine the optimal
values of these parameters. The obtained results com-
pared with theory and some previously published work
show a good agreement with I-V experimental data. This
method is very simple to use in real times measurements,
and can determine easily many physical parameters like
the minority carrier lifetime, diffusion length though
recombination current densities. The determined values
comparing with the theoretical models show an excellent
agreement in level of physical and electrical parameters
extraction.
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