Data Sheet, Rev. 1.

3, April 2009

BTS5210G
Smart High-Side Power Switch
PROFET

Automotive
 Smart High-Side Power Switch
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Data Sheet 2 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

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Data Sheet 3 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Pin Definitions and Functions

Pin Symbol Function Pin configuration
Positive power supply voltage. Design the
1,7, wiring for the simultaneous max. short circuit (top view)
Vbb
8,14 currents from channel 1 to 2 and also for low
thermal resistance
2 GND Logic Ground
3 IN1 Input 1,2 activates channel 1,2 in case Vbb 1 • 14 Vbb
5 IN2 of logic high signal GND 2 13 OUT1
4 ST1 Diagnostic feedback 1,2 of channel 1,2 IN1 3 12 OUT1
6 ST2 open drain ST1 4 11 NC
IN2 5 10 OUT2
Output 1,2 protected high-side power output of ST2 6 9 OUT2
12,13 OUT1
channel 1,2. Design the wiring for the max. Vbb 7 8 Vbb
short circuit current; both output pins have to
be connected in parallel for operation
9,10 OUT2 according this spec.

11 NC Not Connected

Data Sheet 4 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection Vbb 36 V
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoad dump3) 60 V
RI2) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 Ω,
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)4) Ta = 25°C: Ptot 3,05 W
(all channels active) Ta = 85°C: 1,59
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 2.9 A, EAS = 65 mJ, 0 Ω one channel: ZL 11,2 mH
IL = 5.7 A, EAS = 125 mJ, 0 Ω two parallel channels: 5,6
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) ST: 4.0
out to all other pins shorted: 8.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC) IIN ±0.3 mA
Pulsed current through input pin5) IINp ±5.0
Current through status pin (DC) IST ±5.0

1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
Data Sheet 5 Rev. 1.3, 2009-04-16
 Smart High-Side Power Switch
BTS5210G

Parameter and Conditions Symbol Values Unit

min typ max
Thermal resistance
junction - soldering point6)7) each channel: Rthjs -- -- 15 K/W
junction – ambient6) Rthja -- -- --
@ 6 cm2 cooling area one channel active: -- 45 --
all channels active: -- 40 --

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C: RON -- 110 140 mΩ
Tj = 150°C: -- 210 280
two parallel channels, Tj = 25°C: -- 55 70
see diagram, page 11
Nominal load current one channel active: IL(NOM) 1.8 2.4 -- A
two parallel channels active: 3.4 3.9
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up8); IL(GNDhigh) -- -- 2 mA
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time9) IN to 90% VOUT: ton -- 100 250 μs
Turn-off time IN to 10% VOUT: toff -- 100 270
RL = 12 Ω
Slew rate on 9) 10 to 30% VOUT, RL = 12 Ω: dV/dton 0.2 -- 1.0 V/μs
Slew rate off 9) 70 to 40% VOUT, RL = 12 Ω: -dV/dtoff 0.2 -- 1.1 V/μs

6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) Soldering point: upper side of solder edge of device pin 15. See page 14
8) not subject to production test, specified by design
9) See timing diagram on page 12.
Data Sheet 6 Rev. 1.3, 2009-04-16
 Smart High-Side Power Switch
BTS5210G

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage Vbb(on) 5.5 -- 40 V
Undervoltage switch off10) Tj =-40°C...25°C: Vbb(u so) -- -- 4.5 V
Tj =125°C: -- -- 4.511)
Overvoltage protection12) Vbb(AZ) 41 47 52 V
I bb = 40 mA
Standby current13) Tj =-40°C...25°C: Ibb(off) -- 5 8 μA
VIN = 0; see diagram page 11 Tj =150°C: -- -- 12
Tj =125°C: -- -- 811)
Off-State output current (included in Ibb(off)) IL(off) -- 1 5 μA
VIN = 0; each channel
Operating current 14), VIN = 5V,
one channel on: IGND -- 0.5 0.9 mA
all channels on: -- 1.0 1.7
Protection Functions15)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40°C: IL(lim) -- -- 14 A
Tj =25°C: -- 9 --
Tj =+150°C: 5 -- --
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 6.5 -- A
two channels -- 6.5 --
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =25°C: toff(SC) -- 2 -- ms
Vout = 0V (see timing diagrams on page 12)
Output clamp (inductive load switch off)16) VON(CL) 41 47 52 V
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ΔTjt -- 10 -- K

10) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
11) not subject to production test, specified by design
12) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
13) Measured with load; for the whole device; all channels off
14) Add IST, if IST > 0
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
16) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
Data Sheet 7 Rev. 1.3, 2009-04-16
 Smart High-Side Power Switch
BTS5210G

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max

Reverse Battery
Reverse battery voltage 17) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 600 -- mV
IL = - 2.0 A, Tj = +150°C

Diagnostic Characteristics
Open load detection voltage V OUT(OL) 1 1.7 2.8 4.0 V

Input and Status Feedback18)

Input resistance RI 2.5 4.0 6.0 kΩ
(see circuit page 9)
Input turn-on threshold voltage VIN(T+) -- -- 2.5 V
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Input threshold hysteresis Δ VIN(T) -- 0.2 -- V
Status change after positive input slope19) td(STon) -- 10 20 —s
with open load
Status change after positive input slope19) td(STon) 30 -- -- —s
with overload
Status change after negative input slope td(SToff) -- -- 500 —s
with open load
Status change after negative input slope19) td(SToff) -- -- 20 —s
with overtemperature
Off state input current VIN = 0.4 V: IIN(off) 5 -- 20 μA
On state input current VIN = 5 V: IIN(on) 10 35 60 μA
Status output (open drain)
Zener limit voltage IST = +1.6 mA: VST(high) 5.4 -- -- V
ST low voltage IST = +1.6 mA: VST(low) -- -- 0.6

17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18) If ground resistors R
GND are used, add the voltage drop across these resistors.
19) not subject to production test, specified by design

Data Sheet 8 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Truth Table
( each channel )
IN OUT ST
Normal operation L L H
H H H
Open load L Z L20)
H H H
Overtemperature L L H
H L L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.

Terms
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9
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5
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Leadframe (Vbb) is connected to pin 1,7,8,14

External RGND optional; single resistor RGND = 150 Ω for reverse battery protection up to the max.
operating voltage.

20) L, if potential at the Output exceeds the OpenLoad detection voltage

Data Sheet 9 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Input circuit (ESD protection), IN1 or IN2 Overvolt. and reverse batt. protection
9
9EE
5
, 5 67
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=
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=

The use of ESD zener diodes as voltage clamp at DC *1'

5 /RDG
conditions is not recommended. 5 *1'

6LJQDO*1' /RDG*1'

Status output, ST1 or ST2

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
9 RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
5 6721
67 active

Open-load detection, OUT1 or OUT2

(6'
=' OFF-state diagnostic condition:
*1'
Open Load, if VOUT > 3 V typ.; IN low
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
9
DC conditions is not recommended. EE

5
(;7
Inductive and overvoltage output clamp, 2))
OUT1 or OUT2
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Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Data Sheet 10 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

GND disconnect with GND pull up Inductive load switch-off energy


dissipation
( EE

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(5
5
Any kind of load. If VGND > VIN - VIN(T+) device stays off /
Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
2
Vbb disconnect with energized inductive EL = 1/2·L·I L
load While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
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with an approximate solution for RL > 0 Ω:
352)(7 287 IL· L IL·RL
EAS= (V + |VOUT(CL)|)
2·RL bb
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67 OUT(CL)|
*1'

Maximum allowable load inductance for

a single switch off (one channel)4)
9
EE / I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

For inductive load currents up to the limits defined by ZL ZL [mH]

(max. ratings and diagram on page 10) each switch is 
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.






     

IL [A]
Data Sheet 11 Rev. 1.3, 2009-04-16
 Smart High-Side Power Switch
BTS5210G

Typ. on-state resistance

521 I9EE7M; IL = 2 A, IN = high

RON [mOhm]

7M ƒ&




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Vbb [V]

Typ. standby current

,EERII I7M; Vbb = 9...34 V, IN1,2 = low

Ibb(off) [μA]

















     

Tj [°C]
Data Sheet 12 Rev. 1.3, 2009-04-16
 Smart High-Side Power Switch
BTS5210G

Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4

Figure 2b: Switching a lamp:

Figure 1a: Vbb turn on:
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,1
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9 EE 67

9
287
9
287

9
287

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Figure 2a: Switching a resistive load, Figure 3a: Turn on into short circuit:
turn-on/off time and slew rate definition: shut down by overtemperature, restart by cooling
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on external conditions

Data Sheet 13 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in OFF-state, turn
shut down by overtemperature, restart by cooling on/off to open load
(two parallel switched channels 1 and 2) Open load of channel 1; other channels normal
operation
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ST1 and ST2 have to be configured as a 'Wired OR' function

ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Figure 4a: Overtemperature: Overtemperature of channel 1; other channels normal
Reset if Tj <Tjt operation

,1
,1

67
67

—V —V

9
287

7
-

Data Sheet 14 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Package Outlines

0.35 x 45˚

1.75 MAX.
0.175 ±0.07
C

0.19 +0.06
1)

(1.47)

8˚MAX.
4 -0.2

1.27 B
0.1 0.64 ±0.25
2)
0.41+0.10
-0.06 6±0.2
0.2 M A B 14x
14 8 0.2 M C

1 7
1)
8.75 -0.2
A
Index Marking

1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area GPS01230

Figure 1 PG-DSO-14-37 (Plastic Dual Small Outline Package) (RoHS-compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm

Data Sheet 15 Rev. 1.3, 2009-04-16

 Smart High-Side Power Switch
BTS5210G

Revision History

Version Date Changes

Rev. 1.3 2009-04-16 Modification of the package name extension.
V1.2 2007-09-25 Modification of the package drawing.
V1.1 2007-05-29 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.

Data Sheet 16 Rev. 1.3, 2009-04-16

Edition 2009-04-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
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