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 BUZ 72 A

SIPMOS ® Power Transistor

• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 72 A 100 V 9A 0.25 Ω TO-220 AB C67078-S1313-A3

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 25 °C 9
Pulsed drain current IDpuls
TC = 25 °C 36
Avalanche current,limited by Tjmax IAR 10
Avalanche energy,periodic limited by Tjmax EAR 7.9 mJ
Avalanche energy, single pulse EAS
ID = 10 A, VDD = 25 V, RGS = 25 Ω
L = 885 µH, Tj = 25 °C 59
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TC = 25 °C 40
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC ≤ 3.1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

 BUZ 72 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 100 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 100 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
VGS = 10 V, ID = 6 A - 0.2 0.25

Semiconductor Group 2 07/96

 BUZ 72 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 6 A 3 4.3 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 400 530
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 120 180
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 105
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 10 15
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 45 70
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 55 75
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 55

Semiconductor Group 3 07/96

 BUZ 72 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 9
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 36
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 20 A - 1.4 1.6
Reverse recovery time trr ns
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 170 -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.3 -

Semiconductor Group 4 07/96

 BUZ 72 A

Power dissipation Drain current

Ptot = ƒ(TC) ID = ƒ(TC)
parameter: VGS ≥ 10 V

45 10

A
W

ID 8
Ptot 35
7
30
6
25
5

20
4

15
3

10 2

5 1

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance

ID = ƒ(VDS) Zth JC = ƒ(tp)
parameter: D = 0.01, TC = 25°C parameter: D = tp / T

10 2 10 1

t = 52.0µs
p K/W
A
I
D

100 µs
/

ID ZthJC
DS

V 10 0
=
n)

10 1
(o
DS

R
1 ms

10 -1
D = 0.50
10 ms
0.20
10 0 0.10
0.05
10 -2
0.02
DC
single pulse 0.01

10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp

Semiconductor Group 5 07/96

 BUZ 72 A

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: VGS

20 0.80
Ptot = 40W l
k j
a b c d e f g h
A i
Ω
VGS [V]

ID 16 h a 4.0 RDS (on)

b 4.5 0.60
14 c 5.0
g
d 5.5
0.50
12 e 6.0
f f 6.5

10 g 7.0 0.40
e h 7.5

8 i 8.0
j 9.0
0.30
d i
6 k 10.0 j
l 20.0 0.20
c k
4
b 0.10 VGS [V] =
2 a b c d e f g h i j k
a 4.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0 0.00
0 2 4 6 8 V 11 0 2 4 6 8 10 12 14 16 A 20
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

24 6.0

A S

20 5.0
ID gfs
18 4.5

16 4.0

14 3.5

12 3.0

10 2.5

8 2.0

6 1.5

4 1.0

2 0.5
0 0.0
0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 A 22
VGS ID

Semiconductor Group 6 07/96

 BUZ 72 A

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 6 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.80 4.6
V 98%
Ω 4.0

RDS (on) VGS(th)

3.6
0.60
3.2 typ

0.50 2.8

2.4 2%
0.40
98% 2.0
0.30 typ 1.6

1.2
0.20
0.8
0.10
0.4

0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1

Ciss

10 -1 Coss 10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 07/96

 BUZ 72 A

Avalanche energy EAS = ƒ(Tj ) Typ. gate charge

parameter: ID = 10 A, VDD = 25 V VGS = ƒ(QGate)
RGS = 25 Ω, L = 885 µH parameter: ID puls = 15 A

60 16

mJ
V
50
EAS VGS
45 12
0,2 VDS max 0,8 VDS max
40
10
35

30 8

25
6
20

15 4

10
2
5
0 0
20 40 60 80 100 120 °C 160 0 10 20 30 40 50 nC 70
Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj )

120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj

Semiconductor Group 8 07/96

 BUZ 72 A

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group 9 07/96