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Strong Fet™ Irfb7545Pbf: Application V 60V R Typ. 4.9M Max 5.9M I 95A
Strong Fet™ Irfb7545Pbf: Application V 60V R Typ. 4.9M Max 5.9M I 95A
IRFB7545PbF
Application HEXFET® Power MOSFET
Brushed motor drive applications
VDSS 60V
BLDC motor drive applications D
Benefits S
D
Improved gate, avalanche and dynamic dV/dt ruggedness G
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability TO-220AB
Lead-free, RoHS compliant
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB7545PbF TO-220 Tube 50 IRFB7545PbF
14 100
RDS(on), Drain-to -Source On Resistance (m )
ID = 57A
12
80
ID, Drain Current (A)
10 T J = 125°C
60
40
6
20
4
T J = 25°C
2 0
4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
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IRFB7545PbF
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 67 A
IDM Pulsed Drain Current 380
PD @TC = 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 0.83 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and
-55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol Parameter Max. Units
EAS (Thermally limited) Single Pulse Avalanche Energy 140 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 57
IAR Avalanche Current A
See Fig 15, 16, 23a, 23b
EAR Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.21
RCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
RJA Junction-to-Ambient ––– 62
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 46 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.9 5.9 m VGS = 10V, ID = 57A
––– 6.3 ––– VGS = 6.0V, ID = 29A
VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA
––– ––– 1.0 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 150 VDS = 60V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.3 –––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 88µH, RG = 50, IAS = 57A, VGS =10V.
ISD 57A, di/dt 810A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ =25°C, L= 88µH, RG = 50, IAS = 57A, VGS =10V.
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IRFB7545PbF
IS ––– ––– 95
(Body Diode) showing the
A G
Pulsed Source Current integral reverse
ISM ––– ––– 380
(Body Diode) p-n junction diode. S
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IRFB7545PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)
10
4.5V
10
4.5V
1
100
TJ = 175°C
1.6
(Normalized)
10
TJ = 25°C 1.2
1
0.8
V DS = 25V
60µs PULSE WIDTH
0.1 0.4
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100120140160180
V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
100000 14.0
VGS = 0V, f = 1 MHZ ID = 57A
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
12.0 V DS= 48V
V GS, Gate-to-Source Voltage (V)
Ciss 8.0
6.0
Coss
1000
4.0
Crss
2.0
100 0.0
1 10 100 0 10 20 30 40 50 60 70 80 90 100
V DS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
100µsec
1msec
100
100 TJ = 175°C
10 OPERATION
TJ = 25°C IN THIS
AREA
LIMITED BY
10 RDS(on) 10msec
1
Tc = 25°C DC
Tj = 175°C
V GS = 0V Single Pulse
1.0 0.1
0.2 0.6 1.0 1.4 1.8 0.1 1 10
V SD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80 0.6
Id = 1.0mA
78 0.5
74
0.3
72
0.2
70
0.1
68
66 0.0
-60 -40 -20 0 20 40 60 80 100120140160180 -10 0 10 20 30 40 50 60
T J , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy
16
RDS(on), Drain-to -Source On Resistance ( m)
14 Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
12 Vgs = 8.0V
Vgs = 10V
10
4
0 40 80 120 160 200
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IRFB7545PbF
10
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
Avalanche Current (A)
10
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
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IRFB7545PbF
4.0 12
IF = 38A
3.5 V R = 51V
V GS(th) , Gate threshold Voltage (V)
10
TJ = 25°C
3.0
TJ = 125°C
8
2.5
IRRM (A)
ID = 100µA 6
2.0 ID = 250µA
ID = 1.0mA 4
1.5
ID = 1.0A
1.0 2
0.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
12 200
IF = 57A IF = 38A
V R = 51V V R = 51V
10
TJ = 25°C TJ = 25°C
150
TJ = 125°C TJ = 125°C
8
QRR (nC)
IRRM (A)
6 100
4
50
2
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/µs) diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt
200
IF = 57A
V R = 51V
TJ = 25°C
150
TJ = 125°C
QRR (nC)
100
50
0
0 200 400 600 800 1000
diF /dt (A/µs)
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IRFB7545PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS
Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform
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IRFB7545PbF
EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
YEA R 0 = 2000
N o t e : "P " in a s s e m b ly lin e p o s it io n ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFB7545PbF
Qualification Information†
Industrial
Qualification Level (per JEDEC JESD47F) ††
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