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Chapter 1 Diode Circuit Ee b2 76 PDF
Chapter 1 Diode Circuit Ee b2 76 PDF
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ANALOG ELECTRONICS
1 DIODE CIRCUITS
1. INTRODUCTION
The first electronic device to be introduced is called the diode. It is the most fundamental and
simplest semiconductor device but plays a very vital role in electronic system, having
characteristics that closely match those of a simple switch. It will appear in a range of
applications, extending from the simple to the very complex.
Just like resistor, the diode has two terminals; but unlike the resistor which has a linear
relationship between the current flowing through it and voltage appearing across it, the diode
has non-linear V-I characteristics.
Fig(1): The ideal diode (a) diode circuit symbol (b) i-v characteristics.
The characteristics of the ideal diode can be explained as below:
• If the negative voltage (relative to the reference direction indicated in figure 1.a) is
applied to diode, no current flows and the diode behave as an open circuit as shown
in fig 1(c). Diode operated in this mode are said to reverse biased.
An ideal diode has zero current when operated in the reverse direction and is said to
be cut-off and simply OFF.
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• If a positive current (relative to the reference direction indicated in fig 1.a) is applied
to the ideal diode, zero voltage drop appear across the diode. Diode operated in this
mode are said to forward biased.
An ideal diode behaves as a short circuit in forward direction as shown in fig 1(d), it
passes any current with zero voltage drop. Forward biased diode is said to turn ON or
simply ON.
(c) (d)
Equivdent circuit of diode in the Equivalent circuit of diode in the
revese direction forward direction
From the above description it should be noted that the external circuit must be designed to
limit the forward current through a conducting diode, and reverse voltage across cut off
diode, to predetermined values. Figure 2 shows the two-diode circuit that illustrate this
point.
Figure (2): The modes of operation of ideal diode and the use of an external
circuit to limit the forward current (a) and reverse voltage (b)
From fig 2(a), it can be concluded that diode is conducting thus its voltage drop will be
zero, and the current through it will be determined by the +5V supply and 1 KΩ resistor as
5mA.
From fig 2(b), it can be concluded that diode is in cut off. Thus, its current will be zero,
which is turns means that entire 5V supply will appear as reverse bias across the diode.
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• Load line can be defined by a network and characteristic curve defined by the device.
The point of intersection between the two is known as point of operation for this circuit.
It is usually called as quiescent point or Q-point.
• The solution obtained at the intersection of the two curves is same that would be
obtained by a simultaneous mathematical solution of
E VD
ID = −
R R
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an operating point on the characteristics curve that will not change with time. At the
operating point, the resistance of the diode can be simply found by finding the
VD
RD =
ID
• Open the diode and find anode voltage VA and cathode voltage VK.
• If VA > VK ⎯→ Diode is ON
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Method-3
• If VD = Positive ⎯→ Diode is ON
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In figure (9) the diode of figure (7) has been reversed. Again, mentally replacing the
diode with resistive element as shown in fig 10(a) will reveal that the resulting current
direction does not match the arrow in the circuit, the diode current is 0A and the voltage
VR = IRR = IDR
=(0A) R = 0V
figure 11
Solutions:
Resulting current has same direction as the arrowheads of the symbols of both diodes.
Figure 11(a)
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V0 = E − V1 − V2
Figure 12
Solution:
Figure 12(a)
Redrawing the network as shown in figure 12(a) reveals that the resulting current
direction is such as to turn ON diode D1 and turn OFF D2. The resulting current I is then
E1 − E2 − VD 20V − 4V − 0.7V
I= =
R 2.2K
= 6.95 mA
Example 3: Determine the currents I1, I2 and ID2 for the network of figure 13
Figure 13
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Solution:
The applied voltage is such as to turn both diodes ON, as noted by the resulting current
directions in the network of figure 13(a)
Figure: 13 (a)
V 0.7
2
I1 = = = 0.212 mA
R1 3.3
Applying kVL
−V2 + E − V − V =0
1 2
ID2 + I1 = I2
ID2 = I2 − I1
= 1.53 – 0.212
= 1.32 mA
Transfer characteristics of any circuit or two port networks is the graphical representation of
input and output voltage.
The Transfer characteristics of the any electrical circuit is given as
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Example 4: Draw the transfer characteristics of the circuit shown in figure 15 below:
Figure 15
Case 1: [Assume Vγ = 0 V i.e. ideal diode]
Case 2: [Assume Vγ = 0.7 V i.e. silicon diode]
Solution:
(i) For ideal Diode
When Vs > 0 i.e. during positive half cycle. Therefore, diode is ON (conducting)
Figure 15(a)
Vout = 0
⇒
When Vs < 0 i.e. during negative half cycle. Diode is off (non-conducting)
Figure 15(b)
Vout = Vin
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Figure 15(d)
Vout = Vin
Figure 15(e)
Figure 15(f)
Vout = Vin
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Example 5: Draw the transfer characteristics of the circuit of figure 16 shown below:
Figure 16
(i) [Assume Vy = 0 V]
(ii) [Assume Vy = 0.7 V]
Solution:
(i) When Vin > 0,
Then diode D1 is in forward bias i.e. ON state & diode D 2 is in reverse bias i.e. OFF state.
Figure 16 (a)
Vout = 0 Volts
When Vin < 0, then diode D1 is in reverse bias i.e. in OFF state & diode D2 is in forward bias i.e.
in ON state.
Figure 16(b)
Vout = 0 Volts
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(ii) When 0 < Vin < 0.7 V, then both diodes D1 & D2 are in reverse bias i.e. in OFF state.
Figure 16(d)
Vout = Vin
When Vin > 0.7 Volts, then diode D1 is in forward bios with Vy = 0.7 Volts and diode D2 is in
reverse bios.
Figure 16(e)
When 0.7 < Vi < 0, then both diodes D1 & D2 are in reverse bios, i.e. in off state.
Figure 16(f)
Vout = Vin
When Vi < –0.7 volts, then diode D1 is in reverse bios i.e. in OFF state & diode D 2 is in forward
bios i.e. in ON state.
Figure 16(g)
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Contact Potential V0
NAND
V0 = KT ln volts
ni2
or
NAND
V0 = VT ln volts
ni2
[The switching time for a general diode is in msec. Therefore, also act as slow switch].
V-I Characteristics
Breakdown voltage of diode is the manufactures specification. So, in any type of PN-junction.
1
VBr.
Doping
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Diode Resistance
dl l eV / VT l+l
= 0 = V 0
dV VT T
VT
r=
l
l l0 for a forward current l = 26 mA
rsi > rGe
Temperature Dependence of V-I Characteristics
Reverse saturation current approximately doubles for every 10° rise in temperature if
I0 = I01 at T = T1 then at temperature T, I0 is
I0(T) = I01 × 2(T–T1)/10
For either silicon or Ge at room temperature,
dV
= −2.5 mV/ C
dT
Width of depletion layer when diode is open circuited
In an open circuited diode, the depletion layer width
W = WN + WP
2𝜀 1 1
𝑊=√ ( + ) 𝑉0
𝑞 𝑁𝐴 𝑁𝐷
where, 𝜀 = 𝜀0 𝜀𝑟
𝜀 = Absolute permittivity of free space
𝜀0 = 8.854 × 10–12 F/n
𝜀𝑟 = Relative permittivity of dielectric medium
q = 1.6 × 10–19 coulomb
V0 = Contact potential
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2𝜀 1 1
𝑊=√ ( + ) (𝑉0 + 𝑉𝑅𝐵 )
𝑞 𝑁𝐴 𝑁𝐷
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There are many applications in which a diode is biased to operate at a point on the forward i-
v characteristics and small ac signal is superimposed on DC quantities. For this situation, firstly
the DC operating point (VD and ID) will be determine. Then for small signal operation around
the DC bias point, the diode is best modelled by a resistance equal to the inverse of the slope
of the tangent to the exponential i-v characteristic at the bias point.
Now if amplitude of the signal Vd(t) is kept sufficiently small such that
Vd(t)
1
VT
V (t)
Then iD (t) ≃ ID (1 + d )
ηVT
ID
⇒ iD (t) = ID + V (t)
VT d
Thus, superimposed on the dc current ID, there are a small signal current component directly
proportional to the signal voltage Vd(t). That is
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iD(t) = ID + id(t)
ID
∴ id(t)= V (t)
VT d
= g Vd(t)
Hence, diode small signal conductance.
ID
g=
VT
The inverse of this parameter is the diode small signal resistance or incremental resistance, r d
VT
rd =
ID
Figure 18
For each diode η = 2, V γ = 0.7V, dc forward resistance of diode is Rf = 0 Ω. Assuming initially
when S is open, V0 = 4.2 V; for this condition find the incremental resistance in the circuit.
Solutions:
Current through each diode in the given circuit is
10 − V0 10 − 4.2
I= =
1K 1K
= 5.8 mA
So incremental resistance of each diode is
VT
rd =
I
2 25.9 mV
=
5.8 mA
= 8.93 Ω
So total incremental resistance of the circuit is
= 3rd
= 36.79 Ω
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Example 7
In the circuit shown below, assume that voltage drop across a forward biased diode is 0.7 V.
The thermal voltage VT = KT/q = 25 mV. The small signal input voltage Vi = Vp cos(ωt), where
Vp = 200 mV
Figure 19
i) Find bias current IDC through the diodes
ii) Find the ac output voltage Vac.
Solution:
Given, forward voltage drops of diode = 0.7V
KT
Thermal voltage, VT = = 25 mV
q
Figure 19 (a)
VDC = 4 × 0.7 = 2.8 V
12.7 − 2.8
IDC = = 0.1 mA
990
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AC Analysis
DC voltage is short circuited, and all the diode is replaced by ac resistance of diode.
VT
rac = (Assume η = 1)
I
25 mV
rac = = 2.5
0.1 mA
Figure 19 (b)
4rac
Vac = Vi
R + 4rac
4 2.5
= Vi
990 + 4 2.5
10 Vi 1
= = V
1000 100 i
1
= ×200 cos ωt
100
Vac = 2 cos ωt mV
5. CLIPPER
Diode network that can clip of a portion of the input signal without distorting the remaining
part of the alternating waveform is known as Clipper.
There are two general categories of clippers
a) Series clipper
b) Parallel Clipper
The series configuration is defined as one where the diode is in series with the load, while the
parallel configuration has the diode in a branch parallel to the load.
5.1. Series Clipper
(i) Unbiased Clipper
The response of series configuration of fig 20 (a) to a variety of alternating waveform is
provided in fig 20 (b)
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Figure 20 (a)
Figure 20 (b)
From figure 20(a), Anode voltage of diode VA = Vi and Cathode voltage VK = 0
Therefore, for positive half cycle VA > VK, which means diode is forward biased and act
as short circuit.
For negative half cycle VA < VK, which means diode is reverse biased and act as open
circuits.
(ii) Biased clipper
The addition of a dc supply that can have a pronounced effect on the output of a clipper
is shown in figure 21
There is no general procedure for analysing network such as the type in fig 20, but there
are a few points to keep in mind while solving this problem.
• Make a mental sketch of the response of the network based on the direction
of the diode and the applied voltage levels.
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• Determine the applied voltage (transition voltage) that will cause a change
in state for the diode.
For the ideal diode the transition between states will occur on the characteristics, where
Vd = 0 V and id = 0A. Applying the condition id = 0 at Vd = 0 to the network of figure 21
will result in the configuration of figure 21 (a), where it is recognized that the level of V i
that will cause a transition in state is Vi = V
Fig 21 (a): determining the transition level for the circuit of fig 21.
For an input voltage greater than V volts the diode is in the short circuit state, while input
voltage less than V volts it is in the open circuit or off state.
• Be continually aware of the defined terminals and polarity of V0.
When the diode is in the short circuit state, such as shown in fig 21(b), the output voltage
V0 can be determined by applying KVL in the clockwise direction.
Figure 21 (b)
Vi – V – V0 = 0
∴ V0 = Vi – V
• It can be helpful to sketch the input signal above the output and determine
the output and determine the output at instantaneous values of the input.
Figure 21 (c)
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For an instantaneous value of Vi the input can be treated as a dc supply of that value and
corresponding dc value of the output determined.
For instant at Vi = Vm
For Vm > V, diode is short circuit and V0 = Vm – V
When diode change state, and Vi = – Vm
Then V0 = 0 V
And now complete the curve for V0 that can be shown in figure 21 (c).
5.2. Parallel Clipper
The network of figure 22 is the simplest of parallel diode configuration with the output for
the same input as discussed earlier. The analysis of parallel configuration is very similar
to that applied to series configurations.
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6. CLAMPER
The clamping network is one that will clamp a signal to a different dc level. The network consists
of a capacitor, a diode and a resistor element and an independent dc supply to introduce on
additional shift.
The magnitude of R and C must be chosen such that the time constant = RC is large enough
to ensure that the voltage across the capacitor does not discharge significantly during the
interval the diode is non conducting.
There are basically two type of clamper
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When the input is positive, diode operates in forward bias and capacitor charge through
diode. If diode is ideal it behaves as short circuit and therefore capacitor charge up to the
peak input Vm.
When input becomes negative, capacitor should discharge but discharge path is not
available so capacitor voltage will continue to remain V m. Therefore, once capacitor is
fully charged its voltage Vm irrespective of the input being positive or negative.
Applying KVL
–Vi + Vm + V0 = 0
V 0 = Vi – V m
= Vi + (– Vm)
Hence circuit adds dc voltage of –Vm. So, the output will be a square waveform for given
input whose value varies from 0 to – 2Vm.
Positive peak of output waveform touches 0V level or positive peak gets clamped to 0V.
Since a negative clamper is clamping positive peak to 0V so it is called positive peak
clamper.
• If diode has cut in voltage Vγ then it should be replaced with series connection of
ideal diode and battery Vγ.
Figure 24 (a)
When input is +Ve, capacitor changes through diode up to a maximum voltage of V m –
Vγ
∴ V0 = Vi = (Vm – Vγ)
V0 = Vi + (–Vm + Vγ)
Hence, circuit add dc voltage equal to – (Vm – Vγ)
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7. VOLTAGE MULTIPLIER
Voltage Multiplier circuits are employed to maintain a relatively low transformer peak voltage
while stepping up the peak output voltage to two, three, four or many times the peak rectified
voltage.
7.1. Voltage doubler
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In operation capacitor C1 charge through diode D1 to a peak voltage Vm, during the
positive half cycle. Capacitor C2 changes to twice the peak voltage 2Vm developed by the
sum of the voltage across capacitor C1 during negative half cycle.
During positive half cycle, diode D 3 conducts and voltage across capacitor C2 charges
capacitor C3 to the same 2Vm peak voltage. On the negative half cycle, diode D 2 and D4
conduct with capacitor C3, charging C4 to 2Vm.
The voltage across capacitor C2 is 2Vm , across C1 and C3 it is 3Vm and across C2 and C4 it
is 4 Vm. If additional sections of diode and capacitor are used, each capacitor will be
charged to 2Vm. Measuring from the top will provide odd multiple of V m at the output
whereas from bottom will provide even multiple of the peak voltage V m.
Example 8
Determine V0 for the network shown in figure 27, in which silicon diode have cut in voltage
0.7V
Figure 27
Solution:
The transition voltage can first be determined by applying the condition i d = 0A at Vd =
VD = 0.7 V
And obtaining the network of fig 27 (a).
KVL:
V i + VT – V = 0
Vi = V – VT = 4V – 0.7V = 3.3 V
Fig 27 (a): determining the transition level for the above network
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V0 = 4V – 0.7V = 3.3 V
Example-9
Figure 28
Solution:
For the given clamper circuit, make diode short and calculate maximum voltage across
capacitor.
– Vi + VC = 0.7V + 0.3 = 0
V C = Vi – 1 = 5 – 1
= 4V
– V i + VC + V0 = 0
V 0 = Vi – V C
= Vi – 4V
Dc value of output = – 4V
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8. DIODE AS RECTIFIER
Any electrical device which offers a low resistance to the current in one direction and a high
resistance to the current in the opposite direction is called a rectifier. Such a device can convert
a sinusoidal input waveform, whose average value to zero, into a unidirectional (though not
constant) waveform, with a non-zero average component.
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1 1
2 0 m 2
= V sin t dt + o dt
Vm
= – cos t 0
2
–Vm –Vm
= cos – cos 0 = –1 – 1
2 2
–Vm
=
2
(–2 )
Vm
Vo (DC ) =
or Vo (DC ) = 0.318 Vm
Vo (DC ) Vm Im
Io (DC ) = = =
R R
Im
Io (DC ) = = 0.318 Im
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2
1 2 1
=
2 0
( Vm sin t ) dt +
2 o dt
2
Vm 1 – cos 2t
=
2 2
dt
0
2
Vm sin2t
= t –
4 2 0
2
Vm 1
=
4
( – 0) – 2 ( sin2 – sin 0)
2
Vm 1
=
4 – 2 (0 – 0)
2 2
Vm Vm
= =
4 4
Vm
=
2
Vm
Vo (rms ) =
2
Vo (rms ) Vm I
Io (rms ) = = = m
R R·2 2
Im
Io (rms ) =
2
Vm
Im =
R
C. Ripple factor
A measure of the fluctuating components is given by the ripple factor which is defined as
rms value of alternating components of wave
=
Average value of wave
2 2
Vo (rms ) Io (rms )
= – 1 = –1
Vo (DC ) Io (DC )
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Vac Iac
= or
Vdc Idc
Ripple factor of half wave rectifier
2
V / 2
= m –1
Vm /
2
= –1
4
= 1.21
(%) = 121%
PIV = Vm
E. Efficiency
It is a measure of the ability of a rectifier to convert AC power into dc power.
Po ( dc )
= 100
Pin ( ac )
output dc power
= 100
input ac power
Po (DC) = V.I = Vo(DC) · Io(DC)
Pin (AC) = Vrms · Irms
Vo (DC ) ·Io (DC )
= 100
Vrms ·Irms
Vm / · Im /
= 100
Vm / 2 · Im /
4
= 100
2
= 0.405 × 100
= 40.5%
𝐷𝐶 𝑝𝑜𝑤𝑒𝑟 𝑑𝑒𝑙𝑖𝑣𝑒𝑟𝑒𝑑 𝑡𝑜 𝑙𝑒𝑎𝑑
𝑇𝑈𝐹 =
(𝑃𝑎𝑐 ) 𝑟𝑎𝑡𝑒𝑑 𝑠𝑒𝑐𝑜𝑛𝑑𝑎𝑟𝑦
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𝑃𝐷𝐶 𝐼 2 𝑑𝑐 𝑅𝐿
𝑇𝑈𝐹 = =
𝑃𝑎𝑐 (𝑟𝑎𝑡𝑒𝑑 𝑠𝑒𝑐.) 𝑉𝑟𝑚𝑠 ⋅ 𝐼𝑟𝑚𝑠
2
𝐼𝑑𝑐 𝑅𝐿 (0.318 𝐼𝑚 )2 𝑅𝐿
𝑇𝑈𝐹 = = 2 ≈ 28%
𝑉𝑚 𝑅𝑚 𝐼𝑚
× (𝑅𝑓 + 𝑅𝑠 + 𝑅𝐿 )
√2 √2 2√2
G. Form Factor
rms value
Form Factor =
average value
𝐼𝑟𝑚𝑠 𝐼𝑚 /2
𝐹𝑜𝑟𝑚 𝑓𝑎𝑐𝑡𝑜𝑟 = =
𝐼𝑑𝑐 0.318𝐼𝑚
FF = 1.57
H. Peak Factor
Peak value
Peak factor =
rms value
Im I
Peak factor = = m 2
Irms Im /2
Conclusion
It rectifies one half of the input AC signal
Vm
Vo ( dc ) = = 0.318 Vm
▪
Im
Io ( dc ) = = 0.318 Im
▪
Vm
Vo (rms ) =
▪ 2
Im
Io (rms ) =
▪ 2
Vm
Im =
▪ R
▪ γ = 1.21
▪ PIV = Vm
▪ Time period = T = 2ϖ
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(a)
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(b)
Figure 30: (a) Centre tap rectifier circuit, (b) waveform
In this rectifier centre-tapped stepdown transformer has been used, in which secondary
winding is divided into two halves, each half having equal number of turns. In N1 : N2
centre-tapped transformer, primary winding has N1 turns and each half of secondary
winding has N2 turns.
When centre terminal of secondary winding is grounded, voltage at nodes a and b will
have equal magnitude but opposite sign.
i.e., Vb = – Va
if Va = Vm sinα
then Vb = – Vm sinα
Operation
▪ When 0 < α < π
Then Va is positive so diode D 1 is forward biased and in this case Vb is negative so diode
D2 is reverse biased. As diode D1 is in conduction mode so node ‘a’ gets shorted to R L
therefore
Vo = Va
Vo = Vb
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T /2
2
=
T Vm sin t dt
0
T /2
2Vm – cos t
=
T 0
2 T
2Vm – cos T · 2 + cos 0
=
T 2 / T
Vm
= – cos + cos 0
2Vm
=
2Vm
Vo (DC ) = = 0.636Vm
2Im
Io (DC ) = = 0.636 Im
2 T /2
2Vm
= sin2 t dt
T 0
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2Vm2 T /2
(1 – cos 2t ) dt
=
T 2
0
2 T /2
2Vm 1 sin2t
= t–
T 2 2 0
2
Vm T 2
= – 0 2 – ( sin2 – sin 0 )
2 T
T 2 2
T
2
Vm
= 2 – 0
4
2
Vm
=
2
Vm
Vo (rms ) =
2
Im
Similarly, Io (rms ) =
2
C. Ripple factor
2 2
Io (rms ) Vo (rms )
= – 1 or – 1
Io ( dc ) Vo (DC )
2
I / 2
= m −1
2Im /
2
= −1
8
= 0.483
(%) = 48.3%
D. Efficiency
output DC power
= 100
input AC power
Vo (DC ) Io (DC )
= 100
VrmsIrms
2Vm / 2Im /
= 100
Vm / 2 Im / 2
42 8
= = 100 = 0.81 100
2
2
= 81%
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PIV = 2Vm
Irms I / 2
Form factor = = m
Idc 0.636Im
FF = 1.11
H. Peak Factor
Peak value
Peak factor =
rms value
Im Im
Peak factor = = 2
Irms Im / 2
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Conclusion
2Vm
Vo (DC ) = = 0.636Vm
▪
2Im
Io (DC ) = = 0.636 Im
▪
▪ = 0.483
▪ = 81%
Vm
Vrms =
▪ 2
Vm
Irms =
▪ 2
▪ Time period, T = T/2 = π
8.2.2. Bridge Rectifier
The full wave rectifier circuit requires a centre-tapped transformer where only one half of
the total ac voltage of the transformer secondary winding is utilized to convert into dc
output. Now consider a different configuration of full wave rectifier circuit, called bridge
rectifier, where entire AC voltage of the transformer secondary is used to convert into DC
voltage.
Figure 31 shows a bridge rectifier circuit. There are four diodes D 1, D2, D3 and D4 which
form the four arms of the bridge. AC from transformer secondary is fed to two corners
and the load resistance RL is connected to other two corners.
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9. REGULATOR
• The most important property for an ideal power supply is to maintain a constant voltage at
the output terminals for all operating conditions.
• But practically there is a drop-in output terminal voltage of the power supply as the load
current increases, so we require to regulate the power at optimum level using a voltage
regulator.
9.1. Performance Parameters of a Good Voltage Regulator
• Load Regulation Factor
It is the change in the load voltage from no load to full load.
V − VoFL
% Load Re gulation = oNL 100
VoFL
Figure 38
• Line Regulation Factor
It is the effect of variations in the supply voltage causing variations in the output voltage
of the regulator.
VoFL V
o(nomin al)
V01 is the output voltage at the maximum input voltage while V 02 is the output voltage at
the minimum input voltage.
Figure 39
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• When VRB < VBr, the current through Zener diode is practically zero and is thus non-
conducting.
• When VRB = VBr, the current suddenly shoots up due to the breakdown phenomena and
Zener starts conducting.
• When VRB > VBr, more and more current will be passing through Zener diode but the
voltage drop across the device will be maintained almost a constant and it is around
the VBr.
9.4. Dynamic resistance of Zener Diode
It is the ratio of change in voltage across the diode to the change in current through the
diode.
VZ
RZ =
lZ
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Figure 43
9.8. Drawbacks of Zener Voltage Regulators
• The Zener diode can be operated as a voltage regulator within a limited range of
reverse current.
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• Power dissipation for the Zener diode is practically large enough to affect the efficiency
of the device.
• The output resistance of a Zener voltage regulator is practically not as low as desired
for the cascading operation.
Example 10
For the circuit shown in the figure, the output voltage VO is
Figure 44
Solution:
First check whether the Zener diode is in reverse breakdown region (or) not. For that,
we remove Zener diode and the potential across Zener diode should be greater than
breakdown voltage of Zener.
Figure 45(a)
100K
V = (10 )
100K + 100K
10
V= = 5V
2
V<(VZ = 8V)
So, Zener is not in the breakdown region. It acts as open circuit
∴ VO = V = 5V
Example 11
The knee current of a Zener diode in the circuit shown in figure is 5 mA, and a maximum
allowed power dissipation of 300 mW. What are the minimum and maximum load current
that can be drawn safely from the circuit, keeping the output voltage V O constant at 6V?
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Figure 46
Solution:
IZk = 5 mA
Pd(max) = 300 mW
VL = 6V
Ii = IZ = IL
9−6
Ii = = 0.06 = 60 mA
50
IL min = Ii – IZ max = 60 mA – 50 mA = 10 mA
IL max = Ii – IZ min = 60 mA – 5 mA = 55 mA
Example 12
The range of input voltage which can maintain constant output voltage of 50 V is
Figure 47
Solution:
Vi − 50
IL = Ii =
3750
Vi = 143.75V
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Example 13
Find the maximum power dissipated by the Zener Diode.
Figure 48
Solution:
Figure 49
The value of RS should be such that even for the lowest value in the input voltage range,
the circuit should act as regulator by providing the minimum voltage and current needed
for Zener diode to operate in breakdown region and also maximum load current.
The current in the Zener diode is minimum when the load current is maximum, and Vs is
minimum.
Vs min − VZ 20 − 10
Rs = = = 90.9
Iz min + IL max (10 + 100 ) mA
30 V − 10 V
Iz max = = 0.22 A
90.9
PZ = VZ IZ max
PZ = 10 V × 0.22 A = 2.2 W
****
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