51672020 Band gap optimization in Cut ~xGax)(Set ~ ySy)2 by controlled Ga and $ incorporation during reaction of Cu{n.Ga) intermetallics in = Outline "EE Get Access Share Export Thin Solid Films Volume 517, Issue 7, 2 February 2009, Pages 2115-2120 Band gap optimization in Cu(In, _ ,Ga,\Se; _yS,), by controlled Ga and S incorporation during reaction of Cu-(In,Ga) intermetallics in HSe and H2S V.Alberts & Show more v httpsfldoiorg/10.1016jf-2008,10.127 Get rights and content Abstract A large number of companies around the world are developing a variety of manufacturing approaches aimed at low-cost, high throughput, large area CIS-based photovoltaic modules that maintain laboratory-scale cell efficiencies. The most critical technological issue, which directly impacts on the cost-of-ownership of large-scale production, is the specific technology employed for the deposition of the chalcopyrite absorber film. In standard reactive annealing processes, the complex reaction kinetics during the chalcogenization of the precursor film, results in phase segregated multinary alloys. This in turn results in compositionally graded absorber films, which could adversely affect the performance of devices, if grading is not carefully controlled through, proper process control. Against this background, a clear understanding of the reaction paths for the formation of the chalcopyrite multinary alloys is essential. In this paper, the details of a fast solid-state reaction process producing single-phase homogeneous Cu(Iny - ,Ga,\Sey -»S,)2 alloys, are discussed, ‘The most significant material properties of the resulting single-phase chalcopyrite alloys, as well as the corresponding device characteristics, are also reviewed. This technology has been successfully demonstrated in a pilot facility at the University of Johannesburg and is currently been applied on a commercial level by Johanna Solar Technology GmbH. hitpssiwwu.sciencediractcomciencelariclabsipiv$0040509008019023 we51672020 Band gap optimization in Cul Int ~ xGaxy(Set ~ y8)2 by controlled Ga and $ incorporation during reaction of Cuxn.Ga) intermetalies in = Outline "EE Get Access Share Export Keywords Thin films; Single-phase; Cu(In,Ga\(Se,$)p; Selenization; Sulfurization; Devices Specialissue articles Recommended articles Citing articles (16) View full text Copyright © 2008 Published by Elsevier B.V. FRE rrr scenaien nL LL remote acess ELSEVIER Shopping cart Advertise Contact and support Terms and conditions Privacy policy We use cokes to help provide and enhance ou serves allo conten anda. By continuing ou agree tothe se af enol. Copyright © 2070 tlever BY ors lansors or ontibutors,SenceDret Bs a eistered trademark of Eleer BN. ScienceDirect ® registered trademark of Elsevier BY, QRELX"™ htpsshwwwscioncedie ‘comisciencelarclelabs'pivS0040609008013023, 22