MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE

QM100TX1-HB

• IC Collector current ........................ 100A

• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271

APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

68
8
B1

B3

B5

(P)+

10.5
20

14

74±0.25
62.5 –0.2
0

86
B2

B6
B4

14
20

(N)–
W
U

11–M4 (10) 18.5 18.5 18.5 18.5 (10) 4–φ5.4±0.1 10

80±0.25
94
P (+)
B1 B3 B5

U V W
28.2

LABEL
24.8
26

B2 B4 B6
7
4
2

N (–)
13 13

Feb.1999
 MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol Parameter Conditions Ratings Unit

VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V
VCEX Collector-emitter voltage VEB=2V 600 V
VCBO Collector-base voltage Emitter open 600 V
VEBO Emitter-base voltage Collector open 7 V
IC Collector current DC 100 A
–IC Collector reverse current DC (forward diode current) 350 A
PC Collector dissipation TC=25°C 4.5 W
IB Base current DC 100 A
Surge collector reverse current
–ICSM Peak value of one cycle of 60Hz (half wave) 1000 A
(forward diode current)

Tj Junction temperature –40~+150 °C

Tstg Storage temperature –40~+125 °C
Viso Isolation voltage Charged part to case, AC for 1 minute 2500 V
0.98~1.47 N·m
Main terminal screw M4
10~15 kg·cm
1.47~1.96 N·m
— Mounting torque Mounting screw M5
15~20 kg·cm
0.98~1.47 N·m
B(E) teminal screw M4
10~15 kg·cm
— Weight Typical value 520 g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA
ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA
IEBO Emitter cutoff current VEB=7V, Collector open — — 150 mA
VCE (sat) Collector-emitter saturation voltage — — 2.5 V
IC=100A, IB=150mA
VBE (sat) Base-emitter saturation voltage — — 3.0 V
–VCEO Collector-emitter reverse voltage IC=–100A (diode forward voltage) — — 1.8 V
hFE DC current gain IC=100A, VCE=2.5V 750 — — —
ton — — 2.0 µs
ts Switching time VCC=300V, IC=100A, IB1=150mA, –IB2=2.0A — — 8.0 µs
tf — — 3.0 µs
Rth (j-c) Q Thermal resistance Transistor part (per 1/6 module) — — 0.35 °C/ W
Rth (j-c) R (junction to case) Diode part (per 1/6 module) — — 1.3 °C/ W

Contact thermal resistance

Rth (c-f) Conductive grease applied (per 1/6 module) — — 0.2 °C/ W
(case to fin)

Feb.1999
 MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT DC CURRENT GAIN VS.
CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (TYPICAL)
200 2
Tj=25°C VCE=5.0V
COLLECTOR CURRENT IC (A)

10 4
160

DC CURRENT GAIN hFE

7
IB=200mA 5
IB=100mA 4
120 3
2 VCE=2.5V
IB=50mA
80
IB=20mA 10 3
7
40 IB=10mA
5
4
Tj=25°C
3
Tj=125°C
0 2
0 1 2 3 4 5 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COMMON EMITTER INPUT SATURATION VOLTAGE

CHARACTERISTIC (TYPICAL) CHARACTERISTICS (TYPICAL)
VCE (sat), VBE (sat) (V)

10 0 10 1
VCE=2.5V
7 7
Tj=25°C
5 5
4 4
BASE CURRENT IB (A)

VBE(sat)
3 3
2 2
VCE(sat)
10 –1 10 0
SATURATION VOLTAGE

7 7
5 5
4 4
3 3
IB=100mA
2 2 Tj=25°C
Tj=125°C
10 –2 10 –1
2.0 2.4 2.8 3.2 3.6 4.0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION SWITCHING TIME VS. COLLECTOR

VOLTAGE (TYPICAL) CURRENT (TYPICAL)
5 10 1
Tj=25°C VCC=300V
COLLECTOR-EMITTER SATURATION

7 IB1=150mA
ton, ts, tf (µs)

Tj=125°C
5 IB2=–2.0A
4 4
VOLTAGE VCE (sat) (V)

3
2
3 ts
SWITCHING TIME

10 0
IC=75A
2 7
IC=50A 5 tf
IC=30A 4
1 3 ton
2
Tj=25°C
Tj=125°C
0 10 –1
10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)

Feb.1999
 MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE

SWITCHING TIME VS. BASE REVERSE BIAS SAFE OPERATING AREA

CURRENT (TYPICAL)
10 1
VCC=300V 300
7 IB1=150mA

COLLECTOR CURRENT IC (A)

5
ts, tf (µs)

IC=75A
4
3
ts
2 200
SWITCHING TIME

IB2=–2.0A
10 0
tf IB2=–3.5A
7
5
4 100
3
2
Tj=25°C
Tj=125°C Tj=125°C
10 –1 0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 100 200 300 400 500 600 700 800
BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V)

FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.

10 3 100
7 500µs SECOND
5 90 BREAKDOWN
COLLECTOR CURRENT IC (A)

100µs AREA
3 80
DERATING FACTOR (%)

2
10 2 70
7 500µs 60
5
3 50 COLLECTOR
2 1ms 40 DISSIPATION
DC
10 1
7 30
5 20
3 TC=25°C
2 NON–REPETITIVE 10
10 0 0
10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 0 20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

TRANSIENT THERMAL IMPEDANCE COLLECTOR-EMITTER REVERSE
CHARACTERISTIC (TRANSISTOR) VOLTAGE (DIODE FORWARD
10 0 2 3 5 7 10 1 2 3 5 7 10 2 CHARACTERISTICS) (TYPICAL)
COLLECTOR REVERSE CURRENT –IC (A)

0.5 10 2
Tj=25°C
7
Tj=125°C
5
0.4 4
3
Zth (j–c) (°C/ W)

2
0.3
10 1
0.2 7
5
4
3
0.1
2

0 10 0
10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0
TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)

Feb.1999
 MITSUBISHI TRANSISTOR MODULES

QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT REVERSE RECOVERY CHARACTERISTICS

(DIODE FORWARD SURGE CURRENT) OF FREE-WHEEL DIODE (TYPICAL)
SURGE COLLECTOR REVERSE CURRENT

800 10 2 10 2
7 Tj=25°C
700 5 Tj=125°C
3 Irr
600 2
10 1 Qrr 10 1

Irr (A), Qrr (µc)

500 7
–ICSM (A)

trr (µs)
400 3
2
300
10 0 10 0
7 trr
200 5
VCC=300V
100 3
2 IB1=150mA
IB2=–2.0A
0 10 –1 10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)
10 0 2 3 5 7 10 1 2 3 5 7
2.0

1.6
Zth (j–c) (°C/ W)

1.2

0.8

0.4

0
10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0
TIME (s)

Feb.1999
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