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Mowbraya;, L. Harrisa, P.W. Frya, A.D. Ashmorea, S.R. Parnella, J.J. Finleya,M.S. Skolnicka, M.
Hopkinsonb, G. Hillb, J. ClarkbaDepartment of Physics, University of She
eld, She
eld, S3 7RH, UKbDepartment of Electronic and Electrical Engineering, University of She
eld, She
eld, S1 3JD, UKAbstractThe gain characteristics of InAs{GaAs self-assembled quantum dot
lasers are studied using two complementary techniques.The modal gain is derived from a
measurement of the normal incidence, inter-band photoconductivity. For a device containinga
single layer of dots the maximum modal gain of the ground state transition is found to be insu
cient for lasing action. Asa consequence lasing occurs for excited state transitions, which have
a larger oscillator strength, with the precise transitionbeing dependent upon the device cavity
length. The second technique uses the Hakki{Paoli method to determine the spectraland
current dependence of the gain. A quasi-periodic modulation of the below threshold gain is
observed. This modulation isshown to be responsible for the form of the lasing spectra, which
consist of groups of lasing modes separated by non-lasingspectral regions. Possible
mechanisms for this behaviour are discussed.?2000 Elsevier Science B.V. All rights
reserved.PACS:42.55.Px; 78.66.−w; 42.60.LhKeywords:Quantum dots; Semiconductor lasers;
Electro-optic devices; Modal gain; III{V semiconductorsInjection lasers with self-organised
quantum dot(QD) active regions are attracting considerable atten-tion due to their potential
for low threshold currentdensity (Jth) and temperature insensitiveJthdevices[1,2]. In this paper
we describe the use of two comple-mentary techniques to study the gain characteristicsof
InAs{GaAs self-organised QD lasers. These tech-niques allow the magnitude of the ground
state modalCorresponding author. Tel.: +44-114-222-4561; fax: +44-114-272-8079.E-mail
address:d.mowbray@she
eld.ac.uk (D.J. Mowbray)gain and the dependence of the gain spectra on injec-tion current to
be determined.Self-organised InAs QDs were grown by molecularbeam epitaxy on a (001)
GaAs substrate at a tem-perature of 500
C [3]. The QDs have a base lengthof 15 nm, height 3 nm and density51010cm−2.Two laser
devices were studied containing eithera single QD layer con ned on either side by 1375A of
GaAs or 10 QD layers separated by 250AofGaAs and con ned by 1000A GaAs layers.
16,000Athick Al0:6Ga0:4As cladding layers were used in bothdevices. Devices for photocurrent
measurements1386-9477/00/$-see front matter?2000 Elsevier Science B.V. All rights
reserved.PII: S1386-9477(99)00371-9