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Ele Lab Report
Ele Lab Report
REPORT
Abstract
1
0.1 Invearting and Non-inverting Amplifier
(Operational Amplifier)
Aim:
To design and to investigate inverting and non-inverting amplifiers using Op-
Amp.
Apperatus Required:
1. IC 741
2. Resistor 1k and 10 k
3. DC-Power supply of 12 V
4. Multimeter
5. Bread board
6. Connecting wires.
7. Potentiometer.
Theory:
(1) Op-Amp Basics
The operational amplifier is one of the most useful and important com-
ponents of analog electronics. They are widely used in popular electronics.
Their primary limitation is that they are not especially fast.
2
The typical performance degrades rapidly for frequencies greater than
about 1 MHz, although some models are designed specifically to handle
higher frequencies. The primary use of op-amps in amplifier and related
circuits is closely connected to the concept of negative feedback.
Figure 2: Op-Amp
(2)Inverting Amplifier
3
op-amp is zero because of the large open loop gain of the op-amp. Due
to these two conditions, no current enters op-amp circuit and the inverting
terminal is at ground potential. The inverting terminal is now called virtual
ground.
Using Kirchoff ’s Current Law [KCL(Node)]
Iin + If = 0
Iin = −If
Vin −Vo
=
Rin Rf
Vo −Rf
=
Vin Rin
−R
f
Vo = Vin
Rin
Thus, the closed loop voltage gain Vo of the inverting amplifier is independent
of the large open loop gain of the op-amp.
(3)Non-Inverting Amplifier
Assuming the op-amp is ideal and applying the concept of virtual short,
the voltage at the inverting terminal is equal to non-inverting terminal.
ApplyingKirchoff ’s Current Law [KCL(Node)]
Iin + If = 0
Vin Vin − Vo
+ =0
Rin Rf
Vin Vin Vo
+ − =0
Rin Rf Rf
1 1 Vo
Vin + =
Rin Rf Rf
Rf
Vo = 1 + Vin
Rin
4
Figure 4: Non-Inverting Amplifier
The closed loop gain, Vo does not depend on the open loop gain, V, of the
op-amp. Vo is usually greater than unity. One of the applications of a non-
inverting amplifier is emitter follower wherein Rf = 0; hence Vo = 1
5
Procedure:
2. With the help of circuit diagram, set the connections for inverting and
non-inverting amplifier as shown in figure 3 and figure 4.
4. For each value of input voltage given from potentiometer, record the
practical output voltage from the multimeter.
6. Repeat the above procedure for atleast five different values of input
voltage by adjusting the potentiometer.
Observation Table:
(1)Inverting
Vout (mV)
Sl.No Rin (KΩ) Rf (KΩ) Vin (mV)
Theoretical Practical
1 1 10 28 -280 -297
2 1 10 64 -640 -655
3 1 10 66 -660 -680
4 1 10 77 -770 -796
5 1 10 98 -980 -1,000.4
6
(2)Non-Inverting
Vout (mV)
Sl.No Rin (KΩ) Rf (KΩ) Vin (mV)
Theoretical Practical
1 1 10 70 770 786
2 1 10 74 814 819
3 1 10 81 891 900.3
4 1 10 85 935 946
5 1 10 91 1,001 1,010.2
Calculations:
Inverting
Rf = 10k
Rin = 1k
1)For Vin = 28 mV
Rf
Vout = − Vin
Rin
10
Vout = − × 28
1
Vout = −280mV
2)For Vin = 64 mV
Rf
Vout = − Vin
Rin
10
Vout = − × 64
1
Vout = −640mV
7
3)For Vin = 66 mV
Rf
Vout = − Vin
Rin
10
Vout = − × 66
1
Vout = −660mV
4)For Vin = 77 mV
Rf
Vout = − Vin
Rin
10
Vout = − × 77
1
Vout = −770mV
5)For Vin = 98 mV
Rf
Vout = − Vin
Rin
10
Vout = − × 98
1
Vout = −980mV
8
Non-Inverting
Rf = 10k
Rin = 1k
Rf
Vout = 1 + Rin
Vin
10
Vout = 1 + 1
Vin
Vout = 11 × Vin
1)For Vin = 70 mV
Vout = 11 × Vin
Vout = 11 × 70
Vout = 770mV
2)For Vin = 74 mV
Vout = 11 × Vin
Vout = 11 × 74
Vout = 814mV
3)For Vin = 81 mV
Vout = 11 × Vin
Vout = 11 × 81
Vout = 891mV
4)For Vin = 70 mV
Vout = 11 × Vin
Vout = 11 × 85
Vout = 935mV
5)For Vin = 70 mV
Vout = 11 × Vin
Vout = 11 × 91
Vout = 1, 001mV
9
Source of Error and precaution:
4. Do not perform the experiment for a lengthy period, which may effect
the readings.
Result Analysis:
In the inverting amplifier it is closed loop mode application of Op-Amp so
it gives a negative output voltage. In the non-inverting amplifier it is linear
closed loop mode application of Op-Amp so there is no phase shift between
the input and output voltage.
10
0.2 Study of Rectifiers
Aim:
To measure and study rectifiers.
1. Half-wave Rectifier
2. Full-wave Rectifier
3. Bridge Rectifier
Apparatus Required:
1. Breadboard
3. Resistance
4. Capacitance
5. Wires
6. Diodes
7. Connecting wires
8. Multimeter
Theory:
One of the very important applications of diode is in DC power supply as a
rectifier to convert AC into DC. DC Power supply is the important element
of any electronic equipment. This is because it provides power to energize all
electronic circuits like oscillators, amplifiers and so on. In electronic equip-
ments, D.C. Power supply is must.
11
Figure 5: Block Diagram of regulated power supply
In half wave rectifier only half cycle of applied AC voltage is used. An-
other half cycle of AC voltage (negative cycle) is not used. Only one diode is
used which conducts during positive cycle. The circuit diagram of half wave
rectifier without capacitor is shown in the following figure. During positive
half cycle of the input voltage anode of the diode is positive compared with
the cathode.
12
Figure 6: Half-wave rectifier(LTspice)
Wave formation
Diode is in forward bias and current passes through the diode and posi-
tive cycle develops across the load resistance RL. During negative half cycle
of input voltage, anode is negative with respected to cathode and diode is
in reverse bias. No current passes through the diode hence output voltage is
zero.
13
of the current through the load.
During the negative half cycle, (shown in figure below) the polarity re-
verses. Diode D2 is forward biased and diode D1 is reverse biased. Note that
the direction of current through the load has not changed even though the
secondary voltage has changed polarity. Thus another positive half cycle is
produced across the load.
14
Figure 10: Full-wave rectifier(LTspice)
15
through the load.
During the negative half cycle (Figure 13) D2 and D4 are forward biased
and D1 and D3 are reverse biased. Again note that current through the
load is in the same direction although the secondary winding polarity has
reversed.
Formula Used:
For Half-wave Rectifier:
Vm
Vdc =
π
2
Vrms = Vac2 + Vdc2
16
Vac
Ripple F actor(γ) =
Vdc
Pdc
Ef f iciency(η) =
Pac
For Full-wave and Bridge Rectifier:
2Vm
Vdc = √
2
2
Vrms = Vac2 + Vdc2
Vac
Ripple F actor(γ) =
Vdc
Pdc
Ef f iciency(η) =
Pac
Procedures:
Half-wave Rectifier Circuit
17
- Record the output voltages Vo (t) of the different capacitors on the
oscilloscope.
- Thus, comment on the relationship between the output voltage ripple
and the capacitance value of the capacitor.
Step 2
18
Observation Table:
Calculation:
Amplitude(Vm ) = 13 × 5 = 65 V
Amplitude(Vm ) = 12.8 × 5 = 69 V
19
To find Vac
T aking,
Vm 64
Vrms = = = 32 V
2 2
2
Vrms = Vac2 + Vdc2
(32)2 = Vac2 + (20.69)2
Vac2 = (32)2 − (20.69)2
√
Vac = 595.9239
Vac = 24.4 V
2
Pdc Idc R
η = =
Pac 2 R 1+
Irms
Rf
R
I2 Rf
= dc , where 1 + is neglected
2
Irms 1+
Rf R
R
2
2 2
Pdc Idc Im 2
η = = 2 = ×
Pac Irms π Im
2 2
Im 4
= 2
× 2
π Im
4
η = × 100 = 40.5%
π2
20
To find ratio of rectification
pdc 4
Ratio of rectification = = 2
pac π
= 0.405
Pdc
TUF =
Pac
Vm Im
Pac = Vac × Vdc = √ ×
2 2
√
2 2
TUF = = 0.287
π2
Amplitude(Vm ) = 2.2 × 2 = 11 V
21
From the knob of CRO(volt/dividion)→ 5 × 10−3
From the screen of CRO → 3.5
1 1
F requency(f ) = = = 57.142 Hz
T 3.5 × 5 × 10−3
To find Vac
T aking,
Vm 2 × 20
Vrms = √ = √ = 14.14 V
2 2
2
Vrms = Vac2 + Vdc2
(7.778)2 = Vac2 + (7.38)2
Vac2 = (7.778)2 − ((7.38)2
√
Vac = 6.914
Vac = 2.62 V
To find Efficiency η
Pdc I2 R
η = = 2 dc
Pac Irms (Rf + R)
2 √ !2
2 × Im 2
= ×
π Im
2
2
4 × Im 2
= 2
× 2
π Im
8
η = × 100 = 81.05%
π2
22
To find Ratio of rectification
pdc 8
Ratio of rectification = = 2
pac π
= 0.8105
Vdc Idc
TUF =
Vrms Irms
TUF = 0.812
Vm = 2 × 5 = 10 V
For AC mode
Multiplication factor = 5
Amplitude from the screen = 2
Vm = 2 × 5 = 10 V
23
To find Vac
T aking,
Vm 10
Vrms = √ = √ = 7.071 V
2 2
we know,
2
Vrms = Vac2 + Vdc2
(7.071)2 = Vac2 + (6.3661)2
Vac2 = (7.071)2 − ((6.3661)2
√ √
Vac = 49.99 − 40.52 = 9.47
Vac = 3.0776 V
Pdc I2 R
η = = 2 dc
Pac Irms (Rf + R)
2 √ !2
2 × Im 2
= ×
π Im
2
2
4 × Im 2
= ×
π2 2
Im
8
η = × 100 = 81.05%
π2
pdc 8
Ratio of rectification = = 2
pac π
= 0.8105
24
Result Analysis:
The ratio of rectification of half-wave rectifier is 0.405.
The ratio of rectification of full-wave rectifier and bridge rectifier is same,i.e.,
0.8105.
Conclusion:
The result we obtained may not be the accurate results due to the error
discussed above.
25
0.3 Transistors Characteristics
Aim:
To Plot the Transistor Characteristic of Common-Emitter Configuration and
to Find the h-Parameters for the Same
Apparatus Required:
1. Transistor Characteristic Apparatus
2. Two multimeters
3. Breadboard
4. Connecting wire
5. BC547
6. Resistor (1 KΩ)
Circuit Diagram:
26
Theory:
A transistor is a three-terminal device consisting of alternate regions of p-and
n-type semiconductors as shown below. The three segments of the transis-
tor are called emitter (E), base (B) and collector (C). Here (i) the emitter
is sandwiched between the emitter and the collector, (ii) the emitter and
collector are of the same type (p or n), and (iii) the base and emitter (or
collector) are of different materials. You may recall that a diode is a unidi-
rectional device. That is, it controls the direction of current flow. However,
by itself, it cannot control the amount of current passing through it. But
in a transistor, the base terminal controls the current flowing between the
emitter and the collector. This control action gives the transistor an added
advantage over the diode. Depending on the type of doping, the transistors
are classified as n-p-n or p-n-p. In general, the level of doping decreases from
emitter to collector to base.
27
pass into the collector. (The doping level of collector is in-between that of
the emitter and the base.) The collector is the largest of the three regions,
and it dissipates more heat compared to the other two regions.
You are familiar with p-type and n-type semiconductors as also the p-n
junction. We now discuss the working principle of a transistor and consider
an n-p-n transistor because it is more commonly used. When no voltage is
applied across the transistor, diffusion of free electrons across the emitter-
base and collector-base junctions produces two depletion layers, as shown
below.
28
For each depletion layer, the barrier potential is about 0.7 V at 25o C for
a silicon transistor and 0.3V for a germanium transistor. Do you know that
silicon transistors are more widely used than germanium transistors because
of higher voltage rating, greater current ratings, and low temperature sensi-
tivity? For our discussion, we will refer to silicon transistors, unless indicated
otherwise. Since the three regions of the transistor have different doping lev-
els, the depletion layers have different widths. If a region is heavily doped,
the concentration of ions near the junction will be more resulting in thin
depletion layer and vice versa.
2. Do not perform the experiment for a lengthy period, which may effect
the readings.
Procedure:
Input characteristic:
3. Set VCE = 0V , vary VBE in steps of 0.2v and not down the corresponding
IB . Repeat the above procedure for 5V and 10V etc.
29
• hre : input impedance.
Output characteristics:
1. Set up the circuit.
2. Set IB = 10 µA,vary VCE insteps ofc1V and note down the correspond-
ing IB the above procedure for 20 µA and 30 µA. etc.
3. Plot the graphs:VCE vs IC for the constant IB .
4. Find the h-parameter:
• hce : output admittance
• hre :reverse voltage gain
Observation Table:
Input Characteristics
VCE = Constant
30
Output characteristics
IB = constant
31
Calculation:
• VBE2 = 0.64 V
• VBE1 = 0.6 V
• IB2 = 0.02 mA
• IB1 = 0.005 mA
So, we get
0.64 − 0.62
hie =
(0.02 × 10−3 ) − (0.005 × 10−3 )
hie = 666.7 Ω
Similarly,
∆VBE VBE2 − VBE1
hre = =
∆VCB IB−constant VCE 2 − VCE 1
• VBE2 = 0.64 V
• VBE1 = 0.6 V
• VCE 2 = 6 V
• VCE 1 = 0 V
So, we get
0.64 − 0.62
hre =
6−0
hre = 0.0066
32
Graph (VCE vs IC for a constant IB )
Calculation
∆IC IC − IC1
hf e = = 2
∆IB VCE−constant IB2 − IB1
• IC2 = 0.57 mA
• IC1 = 0.51 mA
• IB2 = 20 µA
• IB1 = 10 µA
So, we get
33
Similarly,
∆IC IC2 − IC1
hoe = =
∆VCE IB−constant VCE 2 − VCE 1
• IC2 = 0.57 mA
• IC1 = 0.51 mA
• VCE 2 = 10 V
• VCE 1 = 0 V
So, we get
Result:
Parameters Practical Readings
hf e 6
hie 666.7 Ω
hre 0.0066
hoe 6 µΩ
Result Analysis:
In the input characteristeristics the value of VCE remains constant for certain
value of VBE but it starts increasing steadily after a certain amount of VBE
in all different values of VCE .
Whereas in the output characteristics the value of Ic steadily increases for
increase in VCE for all different values of IB .
34
0.4 RC phase Shift Oscillator
Aim:
To design and construct a RC Phase Shift Oscillator for given operating
frequency(F ).
Apparatus Required:
1. DC Power Supply
2. OP-AMP
3. Capacitors
4. Transistors
5. Potentiometer
6. Oscilloscope
7. Resistors
8. Breadboard
9. Connecting Wires
10. Markers
11. Tracing sheets
Formula Used:
1
F = √
2π 6RC
Where,
F is the Frequency of the wave.
R is the resistance.
C is the capacitor.
35
Theory:
Rc phase shift oscillator is a linear electronic oscillator circuit that produces
a sine wave output. It consists of an inverting amplifier elements such as a
transistor or op-amp with its output fed back to its input through a phase-
shift network consisting of resistors and capacitors in a ladder network. The
feedback network ’shifts’ the phase of the amplifier output by 180 degrees at
the oscillation frequency to give positive feedback. Phase shift oscillators are
often used at audio frequency as audio oscillators.
When the power is turned on, some of the free electrons pick up extra
energy due to ambient temperature and start moving randomly in different
36
directions and generate a noise voltage. The noise voltage contains frequen-
cies of all harmonics that are amplified and feedback to the input in phase
with the original signal. This in turn increases the magnitude of the in-
put voltage. This repeats for several cycles, resulting in an input voltage.
This again repeats for several cycles, resulting in a signal of many frequen-
cies. Due to the resonance in the tank circuit (RC/RL/LC), a particular
frequency signal is selected and the remaining signals are suppressed com-
pletely. In this way we get oscillation at only one frequency. After the output
voltage reaches a desired level, the value of loop gain automatically decreases
to the unity, and the output amplitude remains constant. In order to have
better stability and the above mentioned condition, a negative feedback is in-
troduced (emitter resistance parallel with a capacitor in the amplifier circuit).
Procedure:
1. Collects all the required apparatus for the experiment.
2. With the help of circuit diagram, set the circuit connections.
3. Switched on the power supply and observed the output on the CRO
(sine wave).
37
4. Measured the frequency of oscillation and the amplitude of the output
voltage.
5. Measured and drew the wave form with the help of marker and tracing
sheets.
Calculations:
Determination of phase difference
4T
4φ = × 360o
T
Time period of the wave is
T = 0.2 × 3.8
= 0.76ms
1.9 × 0.2
4φ3 = × 360
0.76
= 180o
38
Figure 21: Wave of first capacitor
1
F = √
2π 6RC
1
= √
2π 6 × 560 × 0.1 × 10−6
= 1160.26Hz
1
F = × 1000
T
1
= × 1000
0.76
= 1315.78Hz
39
Figure 22: Wave of second capacitor
Result:
The frequency that we obtained experimentally is 1315.78Hz.
Result analysis:
Percent error of the frequency
Theoretical value-Experimental value
Percentage error = | | × 100
Experimental value
1160.26 − 1315.78
= | | × 100
1315.78
= 11.82%
40
Figure 23: Wave of third capacitor
Conclusion:
The experimental value that we obtained is slightly more than the theoretical
value with the percentage error of 11.82%. The slight difference in result is
might be due to the lose connections and errors caused while taking the note
of wave function on the CRO and its corresponding values.The result might
be also affected due to the extended time period while experimenting and a
slight fluctuation in power source could have also affected the result. Hence
this obtained result may not be correct.
41