Chapter 1. Introduction 2 input-output isolation as it decouples the input and output, resulting in a sup- pression of the Miller effect leading to a higher bandwidth. The f, doubler uses two transistors in the input in series to lower the input capacitance. ‘I'he selection of the amplifiers is presented in the end of Chapter 4: MOS Amplifiers A layout is then presented and reevaluated through simulations. 1.2 Thesis structure Chapter 2: Cell Spectroscopy covers the electrical properties of cells as fa reference, together with an electric model and simulation. Chapter 3: CMOS ‘Technology describes the use of CMOSSRF technology from IBM Microclectron- ies Division featuring 0.13 pm CMOS technology. Design parameters of the NFET are presented, as the Small Signal Model and the High Frequency Model of the transistor. Chapter 4: MOS Amplifiers desi a comparison of amplifiers described in literature, Three amplifier topologies are ibes different amplifier topologies and chosen and further studied in Chapter 5: Design Process, This chapter also shows : Results the design procedure and the selection of design technicnes. Chapter and Luprovemeuts shows the resulis uf the simulations of the (liee amplifiers, while choosing one of the designs and redesigning the amplifier. Chapter 7: Con- clusions concludes this thesis with a short comparison of the simulated circuits and gives hint toward future work in the area.