UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER

HIGH FREQUENCY OSC NPN
TRANSISTOR

FEATURES
*Collector-Emitter voltage:
BVCEO=50V
*Collector current up to 150mA 1
* High hFE linearity
*complimentary to 2SA1015

TO-92

1:EMITTER 2:COLLECTOR 3. BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector dissipation(Ta=25°C) Pc 400 mW
Collector current Ic 150 mA
Base current IB 50 mA
Junction Temperature Tj 125 °C
Storage Temperature TSTG -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector cut-off current ICBO VCB=60V,IE=0 100 nA
Emitter cut-off current IEBO VEB=5V,Ic=0 100 nA
DC current gain(note) hFE1 VCE=6V,Ic=2mA 70 700
hFE2 VCE=6V,Ic=150mA 25
Collector-emitter saturation voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.25 V
Base-emitter saturation voltage VBE(sat) Ic=100mA,IB=10mA 1.0 V
Current gain bandwidth product fT VCE=10V,Ic=50mA 80 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF
Noise Figure NF Ic=-0.1mA,VCE=6V 1.0 1.0 dB
RG=10kΩ,f=100Hz

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R201-006,A
UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE1
RANK Y G L
RANGE 120-240 200-400 350-700

TYPICAL CHARACTERISTIC CURVES

Fig.1 Static characteristics Fig.2 DC current Gain Fig.3 Base-Emitter on Voltage

100 3 2
10 10

VCE=6V
Ic,Collector current (mA)

Ic,Collector current (mA)

80
HFE, DC current Gain

1 VCE=6V
2 10
IB=300 µA 10
60
IB=250 µA

40 IB=200 µA
1 0
IB=150 µA 10 10

20 IB=100 µA

IB=50 µA
0 0 -1
10 10
0 4 8 12 16 20 -1 0 1 2 3 0 0.2 0.4 0.6 0.8 1.0
10 10 10 10 10

Collector-Emitter voltage ( V) Ic,Collector current (mA) Base-Emitter voltage (V)

Fig.5 Current gain-bandwidth Fig.6 Collector output

Fig.4 Saturation voltage
product Capacitance
4 3 2
10 10 10
Ic=10*IB
Saturation voltage (mV)

Cob,Capacitance (pF)
Current Gain-bandwidth

VCE=6V
f=1MHz
product,fT(MHz)

3 VBE(sat) 2
10 10 1 IE=0
10

2 1 0
10 10 10
VCE(sat)

-1
1 0 10
10 10
-1 0 1 2 3 -1 0 1 2 0 1 2 3
10 10 10 10 10 10 10 10 10 10 10 10 10

Ic,Collector current (mA) Ic,Collector current (mA) Collector-Base voltage (V)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R201-006,A