Semiconductor Exercises

Rolando Torres, Luis E. Rueda

Rolando Torres G., and Elkim Roa

Integrated Systems Research Group – OnChip

Universidad Industrial de Santander, Bucaramanga - Colombia
cristhian.torres@correo.uis.edu.co
 Ex. 1

The intrinsic carrier concentration of germanium (GE) is expressed as:

where Eg=0.66eV

Calculate ni at 300K and 600K.

Determine the electron and hole concentrations if Ge is doped with P at a density of 5E16cm-3
 Ex. 2
An n-type piece of silicon experiences an electric field equal to 0.1 V/m.

(a) Calculate the velocity of electrons and holes in this material.

(b) What doping level is necessary to provide a current density of 1 mA/m2 under these conditions?
Assume the hole current is negligible.
 Ex. 3

A p-type bar of silicon that is subjected to electron injection from the left and hole injection from the right.
Determine the total current flowing through the device if the cross section area is equal to 1umx1um.