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13 Firing Mechanisms - Voltage - Clamp - Protocols2 - Neuro20 PDF
13 Firing Mechanisms - Voltage - Clamp - Protocols2 - Neuro20 PDF
Erev
Po (V, t) ?
Kinetics of G changes (kinetics of Po changes) during a step depolarization reflect
the kinetics of the conformational changes between the different states of the channel
(closed, open, inactivated) ) kinetics of channel activation and inactivation
T=6.3 °C
Hodgkin and
Huxley, 1952
Kinetics of G changes (kinetics of Po changes) during a step depolarization reflect
the kinetics of the conformational changes between the different states of the channel
(closed, open, inactivated) kinetics of channel activation and inactivation
GNa(V, t) = INa(V, t) / (V-ENa) GK(V, t) = IK(V, t) / (V-EK)
9 ms long step
depolarizations
4 ms long step
at different V
depolarizations
at different V Note also the much faster
kinetics of activation of
Na+ compared to K+
channels
(cf rapid upstroke of action
potential mediated by Na+
channels, despite similar st-
st- voltage dependence of
Na+ and K+ channels)
α(V)
C O
β(V)
α (V)
β (V)
k1(V)
k2(V) γ
k1
k2
Hodgkin and Huxley, 1952: the open or closed state of the gates depends on the position of one (or more
than one) charged particle within the membrane, which can move between two states (permissive the
gate opens; non-permissive the gate closes) in response to voltage changes. The equilibrium distribution
of permissive (open) and non-permissive (closed) states can be describred by the Boltzmann equation
GK GNa
where αn is the rate constant of transition of the charged particle controlling the activation
gate from the non permissive to the permissive state and βn is the rate constant of
transition of the charged particle from the permissive to the non-permissive state
GK = n4 GKmax
n(t) = n∞ (1- exp (-t/τn))
with n0 =0
GK
n4 = open probability of the K+
channel (= fraction of open K+
channels in population)
Na+ channels
To be able to fit the kinetics of GNa (GNa (t) ) it is necessary to
assume that 3 charged particles have to be in the permissive
state to open the Na+ channel activation gate and one particle
has to be in the permissive state to open the inactivation gate
h(t) = h0 exp (-t/τh)
GNa
con h∞ ==0m3h GNamax
3h = probabilita’ di trovare canal
mm(t) = m∞ (1 - exp (-t/τm))
Na +
withaperto
m0 =0(o frazione di
di canali Na+ aperti in popolazione).
GNa τm(V) = 1 / (αm+βm)
m∞(V) = αm / (αm+βm)
G = n4 G
K Kmax
τn(V)
τm(V)
τh(V)
n∞(V)
m∞(V)
at voltages higher than the
threshold for opening the channel
activation gate (activation
threshold)
Upon repolarization:
n(t) = exp (-t/τn) with n0 =1 and n∞= 0
Kinetics of deactivation
m(t) = exp (-t/τm) with m0 =1 and m∞= 0
Kinetics of recovery from
h(t) = 1 - exp (-t/τh) con h0= 0 e h∞= 1 inactivation
τn(V), τm(V) τn(V), τm(V)
at V > Vthreshold at V < Vthreshold
are derived from are derived from
fitting the activation fitting the decay
kinetics of the (deactivation)
currents obtained kinetics of the
with protocol A1 currents obtained
(varying V1) with protocol A2
τh(V) is derived from (varying V2)
fitting the kinetics of
inactivation using
the same protocol
to measure the kinetics of recovery from inactivation
Vm
V= -75 mV
αm and βm are both much larger than αn and βn (much faster kinetics of activation and
deactivation of NaV compared to KV).
βh is smaller than αm ( the Na+ channel first activates and then inactivates, but since
βh and αm are not very different, the activation and inactivation kinetics a little overlap
αh = 0 except at very low V (once arrived in the non permissive state the inactivation
particle can move to the permissive state only at very low V).
T = 6.3 °C
Q10 = 3-4
Q10 = rate (T+10°C) / rate (T).
Po (V, t)
G(V, t) = N Po(V, t) g
I (V, t) = G(V, t)(V-E)
I = m(V,t)3h(V,t)GNamax(V-ENa) + n(V,t)4GKmax(V-EK)
+ Gl (V-El) + C (dV/dt)
The 1st equation (with dV/dt=0) was used to simulate the ionic currents in
voltage-clamp
V
Secondary structure
of pore forming α1 NaV
subunit of V-gated
ion channels
CaV
KV
The four highly-charged S4 segments are the voltage
sensors of V-gated ion channels
(considering 4 equivalent and independent charged particles as
in the Hodgkin and Huxley model)
C1 C2 C3 C4 O
Incorrect assumptions in Hodgkin-Huxley model:
α (V)
β (V)
k1(V)
k2(V) γ
k1
k2
Mechanisms of intracellular
neuronal communication
--Electrophysiological methods:
experimental protocols to measure the biophysical
properties of voltage-gated ion channels and to
determine the specific ion channels underlying the
different firing properties of different neurons
To understand the mechanisms underlying the specific
action potential and firing properties of a given neuron
we need to characterize the biophysical properties of
the voltage-gated ion channels involved in the
generation of the action potential.
We need
-a kinetic model for the gating of the ion channels underlying the ionic
components, from which we derive Po(V,t) as a function of the rate constants
of the transitions between the different states in the model
-to be able to obtain the voltage dependence of these rate constants from the
voltage dependence of the experimental parameters (act(V), deact(V), inact(V),
Po(V), Pc(V)) obtained by fitting the experimental data in voltage-clamp
experiments.
-solve a system of differential equations to derive the voltage changes as a
function of time upon depolarization of the membrane above threshold.
If the obtained V changes well simulate the specific action potential recorded
in the neuron, we can conclude that the action potential is generated by ion
channels having the biophysical properties we have characterized in V-clamp
experiments.
If not, other ion channels are involved in the generation of the action potential.
The experimental parameters (act(V), deact(V), inact(V), Po(V), Pc(V))
depend on the rate constants of the model according to equations that
depend on the specific kinetic model.
α (V)
β (V)
k1(V)
k2(V) γ
k1
k2
dPo,K/dt =
dPc,K/dt =
dPI,K/dt =
The values of the different time constants describing the gating
kinetics depend on all the rate constants of the kinetic model.